My Inquiry
My Account
Diodes Incorporated DMNH6065SSD-13
- Part No.:
- DMNH6065SSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMNH6065SSD-13.pdf
- Description:
- MOSFET 2N-CH 60V 3.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,033
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMNH6065SSD from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 60V VDSS, 65 mΩ RDS(ON) @ 10V VGS, and 3.8A continuous drain current at +25°C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and backlight power stages.
For engineers reviewing the DMNH6065SSD datasheet, DMNH6065SSD pinout, DMNH6065SSD application, or DMNH6065SSD equivalent, key selection criteria include its dual-N-channel topology, 4.5V gate drive capability, 175°C maximum junction temperature, and SO-8 thermal performance with RθJA = 72°C/W on enhanced PCB layout.
Technical Context
This device integrates two independent N-channel MOSFETs in a single SO-8 package with shared source terminals (S1/S2) and isolated gates (G1/G2), enabling synchronous buck or half-bridge configurations without external isolation. Its 45 mΩ typical RDS(ON) @ 10V and 60 mΩ @ 4.5V supports efficient operation in 5V- and 12V-input power rails.
The MOSFET features 100% production-tested UIS capability (13A/84.5mJ), low Ciss (446 pF) and Crss (10 pF), and fast switching (tr = 33.5 ns, tf = 19.4 ns), minimizing switching losses and EMI in high-frequency (>500 kHz) converter designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports input rails up to 48V nominal systems with margin for transients. |
| RDS(ON) @ 10V | 45–65 mΩ - Enables <1.2W conduction loss at 3.8A, critical for thermally constrained layouts. |
| RDS(ON) @ 4.5V | 60–88 mΩ - Ensures usable channel resistance with 5V logic-level gate drive. |
| Qg @ 10V | 11.3 nC - Low gate charge reduces driver power and enables efficient 1–2 MHz switching. |
| TJ(max) | +175°C - Allows operation in automotive under-hood or industrial high-ambient environments. |
| Ciss/Coss/Crss | 446 / 113 / 10 pF - Low reverse transfer capacitance minimizes Miller-induced shoot-through risk. |
| ID (TA=100°C) | 2.7 A - Derated current rating confirms thermal viability on standard FR-4 with 1-in² copper. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 4.9 mm × 6.0 mm footprint, 1.45 mm height), RoHS-compliant matte tin finish over copper leadframe, UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side switch node in synchronous buck; connects to input rail or inductor node. |
| S1 | Source of Channel 1 | Common source terminal shared with S2; forms low-side return path for both channels. |
| G1 | Gate of Channel 1 | Isolated control input for first MOSFET; requires dedicated gate resistor and driver. |
| S2 | Source of Channel 2 | Electrically tied to S1; enables dual-channel operation with shared source reference. |
| G2 | Gate of Channel 2 | Independent gate control for second MOSFET; supports asymmetrical duty-cycle topologies. |
| D2 | Drain of Channel 2 | Second switch node-used for complementary switching, load sharing, or dual-phase output. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Reduces board area by 40% vs. discrete dual-MOSFET solutions while maintaining independent gate control. |
| 100% UIS tested | Guarantees ruggedness against inductive kickback in motor drives and solenoid controls without external snubbers. |
| Low RDS(ON) @ 4.5V | Enables direct drive from 5V microcontrollers or PWM controllers without level-shifting circuitry. |
| Green, halogen-free construction | Meets IEC 61249-2-21 and JEDEC J-STD-020 Level 1 moisture sensitivity for reflow compatibility. |
| Thermal robustness | RθJA = 72°C/W on enhanced layout allows 2.0W dissipation-sufficient for 3.3A continuous at 85°C ambient. |
Applications
| LED Backlight Driver | Synchronous Buck Converter |
|---|---|
|
Use Scenario: Driving parallel LED strings in LCD displays using PWM dimming at 1–20 kHz. IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as high-side PWM switch and low-side current-sense path controller. Use Value: 65 mΩ RDS(ON) limits conduction loss to <0.8W per channel at 3.3A, reducing thermal pad requirements. |
Use Scenario: 12V-to-3.3V point-of-load conversion in networking equipment with >92% efficiency target. IC Role / Device Role / Timing Role: D1/G1/S1 forms high-side switch; D2/G2/S2 serves as synchronous rectifier in buck topology. Use Value: 11.3 nC total gate charge enables clean 1 MHz switching with minimal driver loss and reduced output ripple. |
| Automotive HVAC Blower Control | Industrial DC Power Distribution |
|
Use Scenario: PWM-controlled 24V blower motor with regenerative braking and stall protection. IC Role / Device Role / Timing Role: Dual N-FET used in H-bridge configuration with body diodes supporting freewheeling and reverse recovery. Use Value: 31 ns tRR and 23 nC QRR minimize voltage spikes during commutation, reducing snubber size. |
Use Scenario: Redundant 48V-to-12V backup supply in programmable logic controllers with hot-swap capability. IC Role / Device Role / Timing Role: Parallel-connected channels provide 6.6A aggregate current handling with matched RDS(ON) tracking. Use Value: Matched thermal coefficient ensures balanced current sharing across channels up to 150°C junction temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6070SFDF-7 | Single N-channel, 60V, 7mΩ @ 10V, SOT-23-6 package | Lacks dual-channel integration; requires two devices for same function; lower RDS(ON) but higher board area | Select when ultra-low on-resistance dominates over integration and thermal coupling benefits. |
| SI6926ADQ-T1-GE3 | Dual N-channel, 60V, 42mΩ @ 10V, SO-8, but only rated to +150°C TJ | Higher RDS(ON) mismatch between channels; no production UIS testing documented | Prefer for cost-sensitive consumer applications where 175°C rating and avalanche ruggedness are non-critical. |
Compared with DMN6070SFDF-7 and SI6926ADQ-T1-GE3, DMNH6065SSD uniquely combines dual-channel integration, 175°C operation, and 100% UIS qualification-making it optimal for space-constrained, high-reliability industrial and automotive power stages where thermal margin and transient immunity are design-critical.
Availability
DMNH6065SSD is available at Aetrix Electronics and suitable for LED backlight drivers, synchronous buck converters, automotive HVAC controls, and industrial DC power distribution requiring stable component supply and long-term manufacturability.
Supply support for DMNH6065SSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal resilience and switching integrity are essential.
FAQ
What is the maximum continuous drain current for each channel at +100°C ambient?
At TA = +100°C with 1-inch square copper pad (PD = 2.0 W, RθJA = 72°C/W), the maximum continuous drain current per channel is 2.7 A. This value accounts for thermal derating and assumes proper PCB layout per Diodes' recommended pad dimensions and copper area.
Can DMNH6065SSD be used in a half-bridge configuration with bootstrapped gate drive?
Yes-its dual N-channel structure supports half-bridge use, but the high-side gate (G1) requires a bootstrap circuit or isolated gate driver due to lack of integrated level shifter. The 20V VGSS rating and 11.3 nC Qg are compatible with standard bootstrap ICs like IR2104 or LM5113.
Does this MOSFET have avalanche energy rating, and how is it validated?
Yes-EAS = 84.5 mJ at IAS = 13 A (L = 1 mH). This is validated via 100% production unclamped inductive switching (UIS) testing per JEDEC JESD24-11, ensuring consistent ruggedness without reliance on datasheet typicals alone.
Is there an automotive-grade version of DMNH6065SSD, and what qualifications does it hold?
Yes-the DMNH6065SSDQ variant is the automotive-grade counterpart, qualified to AEC-Q101, manufactured in IATF 16949-certified facilities, and PPAP-capable. It shares identical electrical specs but adds change control, extended temperature validation, and automotive-specific reliability testing.
DMNH6065SSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 446pF @ 30V
- Power - Max:
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMNH6065SSD-13 FAQ
1.How can I place an order for DMNH6065SSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6065SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6065SSD-13 reliable?
The price and inventory of DMNH6065SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6065SSD-13 is usually 5 days.
3.What payment methods are accepted for DMNH6065SSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6065SSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6065SSD-13?
DMNH6065SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6065SSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6065SSD-13?
For technical support, including DMNH6065SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6065SSD-13 requirements.
6.How does Aetrix verify that DMNH6065SSD-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6065SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6065SSD-13 meets industry standards.
7.What is the process for return or replacement of DMNH6065SSD-13?
All DMNH6065SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6065SSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6065SSD-13 part is unused and in its original packaging.
Return procedure for DMNH6065SSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMNH6065SSD-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
