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Diodes Incorporated DMNH6065SSDQ-13
- Part No.:
- DMNH6065SSDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMNH6065SSDQ-13.pdf
- Description:
- MOSFET 2N-CH 60V 3.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,820
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Product details
Overview
DMNH6065SSDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 60V VDSS, with RDS(ON) of 65 mΩ @ VGS = 10 V and 88 mΩ @ VGS = 4.5 V, delivering 3.8 A continuous drain current at TA = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive backlighting and DC-DC converter power switches.
For engineers reviewing the DMNH6065SSDQ-13 datasheet, DMNH6065SSDQ-13 pinout, DMNH6065SSDQ-13 application, or DMNH6065SSDQ-13 equivalent, key selection criteria include its dual-channel SO-8 layout, 175°C maximum junction temperature, low gate charge (11.3 nC @ VGS = 10 V), robust UIS rating (13 A/84.5 mJ), and AEC-Q101 qualification for automotive power management.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single SO-8 package, enabling synchronous rectification or half-bridge topologies without cross-conduction risk when driven with independent gate signals. Its 100% production-tested UIS capability ensures reliability under inductive switching stress in automotive power stages.
The device features low input capacitance (Ciss = 446 pF) and fast switching (tR = 33.5 ns, tF = 19.4 ns), optimized for high-frequency DC-DC converters operating up to 1 MHz. Gate threshold voltage (1.0–3.0 V) supports direct drive from 3.3 V or 5 V controllers without level-shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports 48 V automotive bus and 36 V industrial rails with margin. |
| RDS(ON) | 65 mΩ @ VGS = 10 V - Enables <1.2 W conduction loss at 3.8 A in high-efficiency buck stages. |
| Qg | 11.3 nC @ VGS = 10 V - Reduces gate driver power demand and enables efficient 500 kHz–1 MHz operation. |
| EAS | 84.5 mJ - Withstands repetitive inductive energy spikes in motor drivers and solenoid controls. |
| TJ(max) | +175°C - Allows operation in engine bay or under-hood environments without derating. |
| Ciss | 446 pF - Minimizes Miller effect and improves noise immunity in high-dV/dt applications. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 4.9 mm × 6.0 mm footprint, 1.27 mm pitch). Molded green plastic housing, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-channel switch; requires dedicated gate resistor and driver path. |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; electrically isolated from S2 unless externally tied. |
| 3 (D1) | Drain of Channel 1 | High-side or low-side switching node; shares thermal pad with D2/S2 in typical SO-8 dual FET layout. |
| 4 (D2) | Drain of Channel 2 | Second switching node; symmetrical to D1; supports complementary or parallel configurations. |
| 5 (S2) | Source of Channel 2 | Independent source return for Channel 2; enables floating or referenced topologies. |
| 6 (G2) | Gate of Channel 2 | Separate gate terminal for second channel; allows asynchronous or phase-shifted control. |
| 7, 8 (Thermal Pad) | Exposed Drain / Heat Sink | Internally connected to both D1 and D2; must be soldered to PCB copper pour for thermal performance (RθJA = 72°C/W with 1-in² copper). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| 100% UIS tested in production | Each unit passes unclamped inductive switching test (13 A, 84.5 mJ), eliminating need for external snubbers in relay/motor drive circuits. |
| Low RDS(ON) at 4.5 V | 88 mΩ @ VGS = 4.5 V enables direct interface with 5 V microcontrollers and logic-level drivers without gate boosters. |
| Green, halogen-free construction | Meets RoHS 3 (2015/863/EU), contains <900 ppm Br/Cl and <1000 ppm Sb; compatible with lead-free reflow profiles. |
| Fast body diode recovery | tRR = 31 ns and QRR = 23 nC reduce switching losses and EMI in synchronous rectifier applications. |
Applications
| Automotive LED Backlighting | 48 V Automotive DC-DC Converters |
|---|---|
|
Use Scenario: Driving high-brightness LED strings in instrument clusters and center displays using PWM dimming. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling parallel LED branches with independent current regulation. Use Value: Low RDS(ON) minimizes heat buildup in confined display enclosures; 175°C rating ensures reliability across vehicle thermal cycles. |
Use Scenario: Synchronous rectification in 48 V-to-12 V buck converters for ADAS camera modules and infotainment systems. IC Role / Device Role / Timing Role: Dual N-channel MOSFET pair replacing Schottky diodes in secondary-side rectification stage. Use Value: 88 mΩ @ 4.5 V enables efficient operation with standard 5 V gate drivers; fast tR/tF reduces dead-time losses at 500 kHz switching. |
| Engine Control Unit Power Management | Industrial Solenoid Driver Modules |
|
Use Scenario: Controlling fuel injector drivers and valve actuators requiring high peak current and thermal resilience. IC Role / Device Role / Timing Role: High-side or low-side load switch handling pulsed currents up to 30 A (IDM) in burst-mode operation. Use Value: 84.5 mJ EAS withstands inductive kickback without clamping; AEC-Q101 qualification ensures functional safety compliance. |
Use Scenario: Driving 24 V solenoids in factory automation PLC output cards with frequent on/off cycling. IC Role / Device Role / Timing Role: Dual-channel discrete switch enabling independent actuation of two solenoid loads from one IC. Use Value: Independent G1/G2 pins allow staggered turn-on to limit inrush current; SO-8 thermal pad dissipates >2 W continuously at 100°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6070SSDQ-13 | Higher RDS(ON) (70 mΩ @ 10 V), same 60 V rating, identical SO-8 package and AEC-Q101 qualification. | Slightly lower efficiency in high-current DC-DC converters; otherwise drop-in for cost-sensitive designs where 5% RDS(ON) increase is acceptable. | Select when BOM cost reduction outweighs marginal conduction loss increase; verify thermal margin with PD = 2.0 W derating. |
| IPD80R600P7SAUMA1 | Single-channel 80 V, 600 mΩ superjunction MOSFET in TO-252; no dual configuration, higher voltage but much higher RDS(ON). | Not functionally equivalent-requires two devices and additional layout space; lacks integrated dual topology and AEC-Q101 support. | Only consider if system requires >60 V blocking or TO-252 mounting; not a true functional alternative due to topology and qualification mismatch. |
Compared with DMNH6065SSDQ-13, DMN6070SSDQ-13 offers identical automotive qualification and footprint at slightly higher conduction loss, while IPD80R600P7SAUMA1 fails to match dual-channel integration, AEC-Q101 status, or SO-8 thermal performance-making DMNH6065SSDQ-13 the optimal choice for space-constrained, thermally demanding automotive power stages.
Availability
DMNH6065SSDQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, 48 V DC-DC converters, and engine control unit power management requiring stable component supply and long-term lifecycle assurance.
Supply support for DMNH6065SSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1964.
This part belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for under-hood and safety-critical power switching applications demanding extended temperature range and production-tested ruggedness.
FAQ
What is the maximum continuous drain current for DMNH6065SSDQ-13 at 100°C ambient?
At TA = +100°C, the maximum continuous drain current is 2.7 A per channel (ID), as specified in the Absolute Maximum Ratings table. This value assumes FR-4 PCB with 2 oz copper and minimum recommended pad layout; thermal derating follows RθJA = 96°C/W.
Does DMNH6065SSDQ-13 support 3.3 V logic-level gate drive?
No-its gate threshold voltage ranges from 1.0 V to 3.0 V, but RDS(ON) is not characterized below VGS = 4.5 V. At 3.3 V, the device may conduct weakly or unpredictably; it is validated for reliable switching only at VGS ≥ 4.5 V, with full specification at 10 V.
How is the thermal pad (pins 7–8) electrically connected inside the SO-8 package?
Pins 7 and 8 are an exposed thermal pad internally connected to both drain terminals (D1 and D2). It must be soldered to a PCB copper pour for thermal conduction and electrical grounding; leaving it floating degrades thermal performance and may cause instability.
Is DMNH6065SSDQ-13 suitable for reverse polarity protection circuits?
Yes-its dual N-channel structure allows implementation of ideal reverse polarity protection by connecting D1–S2 and D2–S1 in series with load, using internal body diodes for forward conduction and MOSFET channels for low-loss reverse blocking. Gate biasing must ensure both channels turn on synchronously during normal operation.
DMNH6065SSDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 446pF @ 30V
- Power - Max:
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMNH6065SSDQ-13 FAQ
1.How can I place an order for DMNH6065SSDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6065SSDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6065SSDQ-13 reliable?
The price and inventory of DMNH6065SSDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6065SSDQ-13 is usually 5 days.
3.What payment methods are accepted for DMNH6065SSDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6065SSDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6065SSDQ-13?
DMNH6065SSDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6065SSDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6065SSDQ-13?
For technical support, including DMNH6065SSDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6065SSDQ-13 requirements.
6.How does Aetrix verify that DMNH6065SSDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6065SSDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6065SSDQ-13 meets industry standards.
7.What is the process for return or replacement of DMNH6065SSDQ-13?
All DMNH6065SSDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6065SSDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6065SSDQ-13 part is unused and in its original packaging.
Return procedure for DMNH6065SSDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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