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Diodes Incorporated DMNH6069SFVW-13
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- Part No.:
- DMNH6069SFVW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMNH6069SFVW-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V POWERDI333
- Quantity:
- Payment:
- Shipping:
Inventory:8,127
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Product details
Overview
DMNH6069SFVW-13 from Diodes Incorporated is a 60V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI3333-8 package, with RDS(ON) = 50 mΩ @ VGS = 10 V and 63 mΩ @ VGS = 4.5 V, rated for 18 A continuous drain current at TC = +25°C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters in space-constrained industrial power supplies.
For engineers reviewing the DMNH6069SFVW-13 datasheet, DMNH6069SFVW-13 pinout, DMNH6069SFVW-13 application, or DMNH6069SFVW-13 equivalent, key selection criteria include its 175°C junction rating, wettable flank terminals for automated optical inspection, 3.9°C/W RθJC, and 100% production-tested UIS capability-critical for ruggedized 12–48V input power stages.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for simultaneous low RDS(ON) and low gate charge (Qg = 14 nC @ VGS = 10 V), enabling high-frequency synchronous rectification in buck converters. Its body diode exhibits tRR = 11 ns and QRR = 5.1 nC under IF = 4.5 A, di/dt = 100 A/μs conditions.
The PowerDI3333-8 package integrates an exposed drain pad for direct thermal coupling to PCB copper, achieving RθJC = 3.9°C/W and supporting 38 W steady-state dissipation at TC = +25°C. Its wettable flank geometry ensures reliable solder-joint inspection in automated SMT lines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source blocking voltage without breakdown. |
| RDS(ON) | 50 mΩ @ VGS = 10 V - Enables <1.8 W conduction loss at 6 A, critical for thermally constrained layouts. |
| ID (continuous) | 18 A @ TC = +25°C - Supports high-current output stages without external heatsinking when mounted on 2 oz copper. |
| TJ max | +175°C - Qualified for under-hood automotive and industrial environments where ambient exceeds 125°C. |
| Qg | 14 nC @ VGS = 10 V - Reduces gate drive power and enables efficient operation at >500 kHz switching frequencies. |
| EAS | 7.2 mJ - Confirmed energy handling in unclamped inductive switching, essential for flyback and boost converter reliability. |
| RθJC | 3.9°C/W - Allows precise thermal modeling from junction to PCB copper pad, simplifying thermal design. |
Pinout & Package
Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H), footprint occupies only 33% of SO-8 area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Drain) | Power Drain Connection | Four parallel drain terminals tied to exposed copper pad-provides low-inductance, high-current path and primary thermal conduction path to PCB. |
| 5 (Gate) | Control Input | Single gate terminal with Rg = 2.2 Ω; designed for standard 3.3 V/5 V logic-level drive with minimal external gate resistor needed. |
| 6, 7, 8 (Source) | Power Return Path | Three source terminals reduce loop inductance and improve current sharing in high-di/dt applications like synchronous rectification. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Every unit validated for unclamped inductive switching up to IAS = 12 A and EAS = 7.2 mJ-ensures field reliability in hard-switched topologies. |
| Wettable flank leads | Side-terminal plating enables AOI detection of solder fillet height and voiding-reducing post-reflow inspection escapes in high-volume manufacturing. |
| +175°C operation | Rated for continuous operation up to 175°C junction temperature-eliminates derating concerns in sealed enclosures or near heat sources. |
| Green compound | Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb)-meets IPC-1752A Class 2 environmental compliance requirements. |
Applications
| Industrial DC-DC Converters | Automotive Body Control Modules |
|---|---|
Use Scenario: 24 V input, 5 V/10 A isolated buck converter in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET operating at 300 kHz with 50% duty cycle. Use Value: 50 mΩ RDS(ON) reduces conduction loss by 38% versus comparable SO-8 devices, lowering thermal stress on 2-layer PCB. | Use Scenario: 12 V input, 3.3 V/2 A non-isolated buck regulator powering CAN transceiver and microcontroller in door module. IC Role / Device Role / Timing Role: High-side switch in integrated power management IC replacement configuration. Use Value: +175°C rating ensures uninterrupted operation during 105°C ambient cabin temperature tests per ISO 16750-4. |
| Telecom PoE Injectors | Medical Portable Battery Chargers |
Use Scenario: 48 V input, 12 V/3 A active clamp forward converter supplying PoE PSE circuitry. IC Role / Device Role / Timing Role: Clamp FET managing leakage inductance energy during main switch turn-off. Use Value: 7.2 mJ EAS withstands repetitive clamping events without degradation, extending service life beyond 10 years. | Use Scenario: 16.8 V Li-ion battery input, 5 V/3 A buck-boost charger for ultrasound handheld device. IC Role / Device Role / Timing Role: Output switch in high-efficiency, low-noise power stage meeting IEC 60601-1 creepage requirements. Use Value: Small 3.3 mm × 3.3 mm footprint enables compact layout within 20 mm × 30 mm PCB area constraint. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6075SFD-13 | RDS(ON) = 75 mΩ @ VGS = 4.5 V; same PowerDI3333-8 package; lower ID rating (12 A). | Better suited for cost-sensitive, lower-current 12 V systems where 175°C rating is not required. | Select when thermal margin is ample and gate drive voltage is limited to 4.5 V. |
| SiR626DP-T1-GE3 | 60 V, 15 A, RDS(ON) = 48 mΩ @ VGS = 10 V; PowerPAK® 3.3×3.3 package; no wettable flanks. | Higher Qg (17 nC) increases gate drive loss; lacks production UIS testing and 175°C qualification. | Choose only if existing SiR626DP footprint reuse is mandatory and automotive-grade reliability is not required. |
Compared with DMN6075SFD-13 and SiR626DP-T1-GE3, DMNH6069SFVW-13 uniquely combines 175°C operation, wettable flank inspection support, and 100% UIS validation-making it the only option qualified for mission-critical industrial and automotive power stages demanding long-term reliability at elevated temperatures.
Availability
DMNH6069SFVW-13 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and telecom PoE injectors requiring stable component supply, extended temperature operation, and automated optical inspection compatibility.
Supply support for DMNH6069SFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.
This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in thermally demanding environments-emphasizing ruggedness, manufacturability, and long-term parametric stability.
FAQ
What is the maximum allowable gate-source voltage for DMNH6069SFVW-13?
The absolute maximum VGS is ±20 V, as specified in the Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For robust design, gate drive should be clamped to ≤±15 V using Zener diodes or dedicated gate drivers with rail-to-rail limiting.
Does DMNH6069SFVW-13 require a gate resistor for typical 3.3 V MCU drive?
Yes-a series gate resistor (typically 5–10 Ω) is recommended even with 3.3 V logic drive to dampen ringing caused by Lg–Ciss resonance. The device's Rg = 2.2 Ω internal resistance alone is insufficient to suppress oscillation in high-di/dt layouts.
Can DMNH6069SFVW-13 replace SO-8 MOSFETs without PCB redesign?
No-its PowerDI3333-8 footprint differs electrically and mechanically from SO-8. While both are 8-pin, the pinout (D-D-D-D-G-S-S-S) and pad layout (exposed drain, wettable flanks) require dedicated land pattern per Diodes' suggested pad layout document DS43543 page 7.
Is DMNH6069SFVW-13 qualified for automotive AEC-Q101 applications?
No-the DMNH6069SFVW-13 is an industrial-grade part. Diodes offers the automotive-qualified DMNH6069SFVWQ-13 (Q-suffix) with full AEC-Q101 stress testing, PPAP documentation, and IATF 16949 manufacturing certification for automotive use.
DMNH6069SFVW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMNH6069SFVW-13 FAQ
1.How can I place an order for DMNH6069SFVW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6069SFVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6069SFVW-13 reliable?
The price and inventory of DMNH6069SFVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6069SFVW-13 is usually 5 days.
3.What payment methods are accepted for DMNH6069SFVW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6069SFVW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6069SFVW-13?
DMNH6069SFVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6069SFVW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6069SFVW-13?
For technical support, including DMNH6069SFVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6069SFVW-13 requirements.
6.How does Aetrix verify that DMNH6069SFVW-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6069SFVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6069SFVW-13 meets industry standards.
7.What is the process for return or replacement of DMNH6069SFVW-13?
All DMNH6069SFVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6069SFVW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6069SFVW-13 part is unused and in its original packaging.
Return procedure for DMNH6069SFVW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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