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Diodes Incorporated DMNH6069SFVW-7
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- Part No.:
- DMNH6069SFVW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMNH6069SFVW-7.pdf
- Description:
- MOSFET BVDSS: 41V~60V POWERDI333
- Quantity:
- Payment:
- Shipping:
Inventory:9,194
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Product details
Overview
DMNH6069SFVW-7 from Diodes Incorporated is a 60V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 50 mΩ RDS(ON) @ VGS = 10 V and 18 A continuous drain current at TC = +25°C. It features wettable flanks for automated optical inspection and is optimized for high-efficiency DC-DC converters in thermally constrained industrial power supplies.
For engineers reviewing the DMNH6069SFVW-7 datasheet, DMNH6069SFVW-7 pinout, DMNH6069SFVW-7 application, or DMNH6069SFVW-7 equivalent, key selection criteria include its 3.9°C/W RθJC, 100% production-tested UIS capability, +175°C junction rating, and 33% board-area reduction versus SO-8 - critical for compact, high-reliability power management designs.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining fast switching (tF = 3.3 ns, tD(OFF) = 12 ns) and robust avalanche performance (EAS = 7.2 mJ). Its gate threshold voltage (1–3 V) ensures reliable turn-on with standard 4.5 V and 10 V logic-level drivers.
The PowerDI3333-8 package integrates an exposed drain pad for low thermal resistance (RθJC = 3.9°C/W), and its wettable flank geometry supports solder-joint quality verification via AOI. The device meets JEDEC reliability standards and is rated for operation from –55°C to +175°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source blocking voltage without breakdown. |
| RDS(ON) | 50 mΩ @ VGS = 10 V - Minimizes conduction loss in high-current paths (e.g., synchronous buck high-side switch). |
| ID (continuous) | 18 A @ TC = +25°C - Supports high-power density designs when mounted on heatsink or copper plane. |
| Qg | 14 nC @ VGS = 10 V - Enables efficient gate drive with moderate driver strength; reduces switching loss in 300–1000 kHz applications. |
| RθJC | 3.9°C/W - Enables direct thermal path from junction to PCB copper or heatsink, critical for sustained 12 A operation at elevated ambient. |
| EAS | 7.2 mJ - Guarantees ruggedness against inductive load transients without external snubbers in DC-DC converter freewheeling paths. |
| TJ max | +175°C - Allows operation in under-hood automotive modules, industrial motor drives, and sealed power enclosures without derating. |
Pinout & Package
Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flanks. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L×W×H); weight ≈ 0.072 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D) | Drain | Main high-current path; connected to exposed metal pad for thermal and electrical conduction to PCB ground plane. |
| Pins 2–4 (D) | Drain | Parallel drain terminals reduce package inductance and improve current sharing in high-frequency switching. |
| Pin 5 (G) | Gate | Control input; requires <3 V threshold margin for reliable turn-on with 4.5 V logic; gate resistance 2.2 Ω limits ringing. |
| Pins 6–8 (S) | Source | Return path for channel current; pins 6–8 are internally tied and provide low-inductance source connection. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Enables deployment in high-ambient environments (e.g., engine control units, solar microinverters) without thermal derating penalties. |
| 100% production UIS tested | Ensures every unit withstands unclamped inductive switching stress-critical for reliability in non-synchronous flyback or boost converters. |
| Wettable flank terminals | Supports automated optical inspection of solder fillets, improving yield and field reliability in high-volume SMT assembly. |
| 33% smaller board area vs. SO-8 | Reduces PCB real estate by >65% compared to legacy SO-8 MOSFETs, enabling denser power stage layouts in space-constrained modules. |
| Lead-free, halogen-free, RoHS 3 compliant | Meets global environmental regulations (Br+Cl <1500 ppm, Sb <1000 ppm) for industrial and automotive supply chains. |
Applications
| Industrial DC-DC Converters | Automotive Body Control Modules |
|---|---|
|
Use Scenario: 12 V–48 V input, 3.3 V/5 V output buck converters powering PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz with 10 V gate drive. Use Value: 50 mΩ RDS(ON) and 3.9°C/W RθJC enable >94% efficiency at 10 A load while maintaining TJ < 125°C on 2 oz copper. |
Use Scenario: Load switching for interior lighting, window lift motors, and HVAC actuators in 12 V vehicle networks. IC Role / Device Role / Timing Role: Low-side load switch controlled by microcontroller GPIO with integrated body diode freewheeling. Use Value: 175°C rating allows placement near heat-generating ECUs; 72 A pulsed current handles motor inrush without external protection. |
| Server VRMs | Industrial Motor Drives |
|
Use Scenario: Point-of-load (POL) converters supplying core voltage to FPGAs and ASICs in data center servers. IC Role / Device Role / Timing Role: High-efficiency, high-density power stage switch in multiphase buck topology. Use Value: Small 3.3 mm × 3.3 mm footprint enables tighter phase interleaving; low Qg (14 nC) reduces gate drive losses at 1 MHz switching. |
Use Scenario: Half-bridge switches in 24 V/48 V BLDC motor controllers for factory automation and robotics. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg with fast 3.3 ns fall time minimizing shoot-through risk. Use Value: 12 A repetitive avalanche rating absorbs back-EMF spikes during commutation; wettable flanks ensure solder joint integrity under vibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6070SFVW-7 | 60 V, 45 mΩ @ 10 V, 20 A ID, same PowerDI3333-8 package but higher gate charge (16 nC). | Better conduction loss at high current, but higher switching loss above 300 kHz due to increased Qg. | Select when conduction loss dominates (e.g., low-frequency, high-duty-cycle loads); avoid in high-frequency POL converters. |
| DMNH6012LK3-13 | 60 V, 12 mΩ @ 10 V, 40 A ID, PowerDI5060 package (larger, 5.0 mm × 6.0 mm), RθJC = 2.5°C/W. | Lower RDS(ON) and higher current, but occupies >2.7× board area and lacks wettable flanks. | Select only when thermal budget is extremely tight and board space is unconstrained; not suitable for AOI-dependent production lines. |
Compared with DMNH6069SFVW-7, DMN6070SFVW-7 trades marginal RDS(ON) improvement for higher switching loss, while DMNH6012LK3-13 delivers superior thermal performance at the cost of footprint and manufacturability - making DMNH6069SFVW-7 the optimal balance for space-constrained, high-reliability 10–20 A power stages.
Availability
DMNH6069SFVW-7 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and server point-of-load regulators requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for DMNH6069SFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.
This MOSFET belongs to Diodes' PowerDI® portfolio, engineered specifically for high-density, thermally demanding power conversion applications where small footprint, ruggedness, and extended temperature operation are mandatory design requirements.
FAQ
What is the maximum safe operating temperature for DMNH6069SFVW-7?
The device is rated for continuous operation from –55°C to +175°C junction temperature. Its absolute maximum TJ is +175°C, verified per JEDEC standards. Derating is required above TC = +100°C per the datasheet's ID vs. TC curves - at TC = +125°C, continuous drain current drops to 10 A.
Does DMNH6069SFVW-7 support 4.5 V logic-level gate drive?
Yes. With VGS(TH) specified from 1 V to 3 V and RDS(ON) = 63 mΩ @ VGS = 4.5 V, it fully turns on using standard 4.5 V microcontroller outputs. Gate charge is 6.4 nC at 4.5 V, enabling efficient drive with low-power gate drivers like the DIODES AP21xx series.
Is the PowerDI3333-8 package compatible with standard SO-8 reflow profiles?
Yes. Its PowerDI3333-8 footprint uses standard lead-free reflow profiles (peak 260°C, 60 s max above 217°C). The package's moisture sensitivity level is J-STD-020 Level 1, eliminating bake requirements prior to assembly. Wettable flanks align with IPC-A-610 Class 3 solder fillet acceptance criteria.
Can DMNH6069SFVW-7 replace SO-8 MOSFETs without PCB redesign?
No. Although functionally equivalent, PowerDI3333-8 has different pad layout (3.3 mm × 3.3 mm, 0.65 mm pitch) versus SO-8 (4.9 mm × 6.0 mm, 1.27 mm pitch). A new PCB layout is required - however, the smaller size enables higher power density and improved thermal performance over SO-8 equivalents.
DMNH6069SFVW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMNH6069SFVW-7 FAQ
1.How can I place an order for DMNH6069SFVW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6069SFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6069SFVW-7 reliable?
The price and inventory of DMNH6069SFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6069SFVW-7 is usually 5 days.
3.What payment methods are accepted for DMNH6069SFVW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6069SFVW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6069SFVW-7?
DMNH6069SFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6069SFVW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6069SFVW-7?
For technical support, including DMNH6069SFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6069SFVW-7 requirements.
6.How does Aetrix verify that DMNH6069SFVW-7 is sourced from the original manufacturer or authorized distributors?
All DMNH6069SFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6069SFVW-7 meets industry standards.
7.What is the process for return or replacement of DMNH6069SFVW-7?
All DMNH6069SFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6069SFVW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6069SFVW-7 part is unused and in its original packaging.
Return procedure for DMNH6069SFVW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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