Diodes Incorporated DMNH6069SFVWQ-7

Overview

DMNH6069SFVWQ from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for continuous operation at +175°C junction temperature, with R_DS(ON) = 50 mΩ @ V_GS = 10 V and 63 mΩ @ V_GS = 4.5 V, delivering 18 A I_D at T_C = +25°C. It serves as a high-reliability power switch in automotive DC-DC converters and power-management circuits.

For engineers reviewing the DMNH6069SFVWQ datasheet, DMNH6069SFVWQ pinout, DMNH6069SFVWQ application, or DMNH6069SFVWQ equivalent, key selection criteria include its AEC-Q101 qualification, wettable flank terminals for automated optical inspection, 100% production-tested UIS capability, and thermal performance validated up to +175°C ambient in automotive under-hood environments.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and fast switching in high-temperature automotive power stages. Its gate threshold voltage (1–3 V) enables robust drive compatibility with 3.3 V and 5 V logic controllers, while its Q_g = 14 nC (V_GS = 10 V) and t_F = 3.3 ns support efficient high-frequency synchronous rectification.

The device integrates a body diode with t_RR = 11 ns and Q_RR = 5.1 nC, enabling reliable freewheeling in buck and boost topologies. Its R_θJC = 3.9 °C/W and exposed drain pad design allow direct thermal coupling to PCB copper, supporting >38 W steady-state dissipation when mounted on a thermally optimized land pattern.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank side terminals. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H), 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL140N6F7AG and IPB180N06S4-02, DMNH6069SFVWQ uniquely balances ultra-compact size, AEC-Q101 PPAP readiness, wettable flank AOI capability, and 175°C operation - making it optimal for next-gen ADAS and body electronics where board area, inspection yield, and under-hood temperature are co-constrained.

Availability

DMNH6069SFVWQ is available at Aetrix Electronics and suitable for automotive body control modules, engine control units, ADAS camera power supplies, and electric power steering systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMNH6069SFVWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-temperature, high-reliability power switching in AEC-Q101-compliant vehicle subsystems - emphasizing thermal robustness, production test rigor, and zero-defect manufacturability.

FAQ

What is the maximum allowable gate-source voltage for DMNH6069SFVWQ?

The absolute maximum V_GS is ±20 V per the datasheet's Maximum Ratings table. Operation beyond this risks permanent gate oxide damage. For reliable 12 V gate drive, a 15 V Zener clamp or resistor-divider bias network is recommended to prevent overshoot during fast switching transitions.

Does DMNH6069SFVWQ require a gate resistor, and if so, what value is recommended?

Yes - a series gate resistor is required to control dV/dt and suppress oscillation. Diodes recommends 2.2 Ω (as measured R_g = 2.2 Ω in dynamic testing), placed as close as possible to the gate pin. Values between 1.5 Ω and 4.7 Ω balance switching speed and EMI in 300–600 kHz DC-DC applications.

How is the PowerDI3333-8 package thermally attached to the PCB?

The exposed drain pad must be soldered directly to a large, thermally optimized copper pour (minimum 100 mm², 2 oz copper) connected via ≥4 thermal vias (0.3 mm diameter, filled or capped) to internal ground or power planes. The datasheet specifies R_θJC = 3.9 °C/W assumes this configuration.

Is DMNH6069SFVWQ suitable for reverse-polarity protection in automotive 12 V systems?

Yes - its 60 V V_DSS, low R_DS(ON), and AEC-Q101 qualification make it ideal for active reverse-voltage protection. When used in common-drain configuration with gate driven to battery voltage, it achieves <300 mV forward drop at 15 A, outperforming Schottky diodes in thermal and efficiency metrics.