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Diodes Incorporated DMP1005UFDF-13
- Part No.:
- DMP1005UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP1005UFDF-13.pdf
- Description:
- MOSFET P-CH 12V 26A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,337
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Product details
Overview
DMP1005UFDF from Diodes Incorporated is a P-channel enhancement-mode MOSFET optimized for low-voltage load switching in space-constrained power management systems, featuring 8.5 mΩ RDS(ON) at VGS = −4.5 V, −26 A continuous drain current at TC = +25°C, and U-DFN2020-6 (Type F) 2.0 × 2.0 mm package with 0.6 mm profile - deployed in battery protection circuits and USB-C port power switches.
For engineers reviewing the DMP1005UFDF datasheet, DMP1005UFDF pinout, DMP1005UFDF application, or DMP1005UFDF equivalent, key selection criteria include gate threshold voltage (−0.3 to −1.0 V), thermal resistance (RθJA = 59 °C/W on 1-inch² copper), avalanche energy rating (20 mJ), and ESD robustness (8 kV HBM).
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining fast switching performance (tF = 125 ns, tD(OFF) = 140 ns) and controlled gate charge (Qg = 28 nC at VGS = −4.5 V). Its negative gate threshold enables direct logic-level drive from 3.3 V microcontrollers without level-shifting.
The integrated source-drain diode exhibits VSD = −0.8 to −1.2 V at IS = −1.0 A and supports bidirectional current flow in reverse-polarity protection topologies. The device is rated for operation from −55°C to +150°C and qualified per J-STD-020 Level 1 moisture sensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −12 V - supports input rails up to 12 V with margin for transients in portable battery systems |
| RDS(ON) max | 8.5 mΩ @ VGS = −4.5 V - enables <100 mW conduction loss at 10 A, critical for thermally limited PCBs |
| ID continuous | −26 A @ TC = +25°C - delivers high-current capability in compact footprint with external heatsinking |
| VGS(TH) | −0.3 to −1.0 V - ensures reliable turn-on with standard 3.3 V GPIO, eliminating need for gate driver ICs |
| Qg | 28 nC @ VGS = −4.5 V - reduces gate drive power and switching losses in high-frequency DC-DC control paths |
| EAS | 20 mJ - provides single-pulse avalanche ruggedness for inductive load switching and fault tolerance |
| RθJA | 59 °C/W - achievable with 1-inch² copper pour, enabling >1 W dissipation in industrial ambient conditions |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0 mm × 2.0 mm × 0.6 mm body, exposed thermal pad, NiPdAu-plated terminals, JEDEC-compliant footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level negative bias; internal ESD diode to source protects against ±8 kV HBM |
| 2 (S) | Source | Reference node for gate drive; tied to system ground or battery negative in high-side switch configurations |
| 3 (D) | Drain | Power output node; connects to load or downstream rail; requires thermal relief via exposed pad soldering |
| 4 (S) | Source | Second source connection; paralleled with Pin 2 to reduce source inductance and improve current sharing |
| 5 (D) | Drain | Second drain connection; paralleled with Pin 3 to lower RDS(ON) and enhance thermal spreading |
| 6 (EP) | Exposed Pad | Thermal and electrical connection to PCB ground plane; mandatory for achieving rated power dissipation and RθJC = 14 °C/W |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile 0.6 mm height | Enables integration into ultra-thin consumer electronics (e.g., smartphones, wearables) where Z-height is constrained |
| 4 mm² PCB footprint | Reduces board area by >50% vs. SO-8 equivalents, supporting dense power routing in multi-rail PMIC subsystems |
| ESD protection: 8 kV HBM | Eliminates need for external TVS diodes in handheld device interfaces, lowering BOM count and assembly cost |
| Lead-free, halogen-free, RoHS 3 compliant | Meets IPC-J-STD-020 Level 1 moisture sensitivity and automotive PPAP requirements without special handling |
| −55°C to +150°C operating range | Supports deployment in under-hood automotive modules and industrial motor controllers without derating |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs for power tools and medical devices. IC Role / Device Role: High-side P-channel MOSFET used as active OR-ing switch and fault-isolation element. Use Value: Low RDS(ON) minimizes voltage drop across protection path, preserving battery runtime; ESD-hardened gate withstands hot-plug events. |
Use Scenario: VBUS enable/disable control in dual-role USB-C ports supporting 3 A/20 V PD profiles. IC Role / Device Role: Load switch managing power delivery direction between host and peripheral during role swap. Use Value: Fast turn-off (tF = 125 ns) prevents cross-conduction during CC logic transitions; 0.6 mm profile fits beneath USB-C receptacle. |
| Industrial Sensor Node Power Gate | Portable Diagnostic Equipment Load Control |
|
Use Scenario: Power gating of wireless transceivers and analog front-ends in battery-powered IIoT edge nodes. IC Role / Device Role: Low-quiescent-load power switch enabling deep-sleep current <1 µA when disabled. Use Value: Gate threshold below −1 V ensures full cutoff at 0 V gate drive, preventing leakage-induced wake-up in sleep modes. |
Use Scenario: Isolation of high-current subsystems (e.g., LED illumination, motor drivers) in handheld diagnostic scanners. IC Role / Device Role: Main power distribution switch activated by MCU GPIO to sequence subsystem power-up/down. Use Value: Avalanche-rated (20 mJ) operation tolerates inductive kickback from solenoid loads without snubber networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012T | RDS(ON) = 12.5 mΩ @ −4.5 V; smaller 1.6 × 1.6 mm U-DFN1616-6 package; no avalanche rating | Limited to <15 A continuous; unsuitable for inductive loads or high-reliability battery disconnect | Prefer for ultra-compact, low-current (<8 A) applications where board space is more critical than ruggedness |
| SI2305DS | RDS(ON) = 50 mΩ @ −4.5 V; SOT-23 package; higher RθJA = 200 °C/W; no ESD rating specified | Only suitable for <3 A loads; requires external ESD protection and thermal vias for stable operation | Select only for cost-sensitive, low-power designs where 0.6 mm height and 8 kV ESD are not required |
Compared with DMG1012T and SI2305DS, DMP1005UFDF delivers superior current density (−26 A), lower thermal resistance (59 °C/W), and certified avalanche ruggedness - making it the preferred choice for mission-critical 12 V load switching where reliability and compactness must coexist.
Availability
DMP1005UFDF is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial sensor node power gating requiring stable component supply across production lifecycles.
Supply support for DMP1005UFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
DMP1005UFDF belongs to Diodes' U-DFN logic-level MOSFET product line, engineered specifically for space-constrained, high-current load switching in portable and battery-powered systems demanding low RDS(ON), robust ESD immunity, and thermal efficiency.
FAQ
What is the maximum continuous drain current for DMP1005UFDF at 70°C case temperature?
The DMP1005UFDF supports −21 A continuous drain current at TC = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects junction-to-case thermal resistance (RθJC = 14 °C/W) and safe operating area limits under steady-state conduction, assuming proper PCB copper area and thermal via implementation.
Does DMP1005UFDF require a gate resistor for typical 3.3 V MCU drive?
No external gate resistor is required for basic on/off switching with a 3.3 V GPIO, since the device's low gate threshold (−0.3 to −1.0 V) ensures full enhancement. However, a 10–47 Ω series resistor is recommended to damp ringing and limit peak gate current during fast transitions in high-frequency PWM applications.
Can DMP1005UFDF be used in high-side configuration with 12 V supply?
Yes - DMP1005UFDF is rated for VDSS = −12 V and supports high-side switching with source tied to 12 V rail and gate driven to 0 V (fully on) or >8.5 V (fully off). Its gate-source voltage rating (±8 V) permits use with simple level-shifting circuitry or dedicated high-side drivers for precise timing control.
Is the exposed thermal pad electrically isolated or connected internally?
The exposed pad (Pin 6) is electrically connected to the source terminal and must be soldered to a PCB ground plane or source net. It serves both thermal conduction (reducing RθJC to 14 °C/W) and electrical continuity; floating or insulated mounting degrades thermal performance and violates JEDEC U-DFN2020-6 mechanical specifications.
DMP1005UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2475 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMP1005UFDF-13 FAQ
1.How can I place an order for DMP1005UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP1005UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP1005UFDF-13 reliable?
The price and inventory of DMP1005UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP1005UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMP1005UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP1005UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP1005UFDF-13?
DMP1005UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP1005UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP1005UFDF-13?
For technical support, including DMP1005UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP1005UFDF-13 requirements.
6.How does Aetrix verify that DMP1005UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMP1005UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP1005UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMP1005UFDF-13?
All DMP1005UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP1005UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP1005UFDF-13 part is unused and in its original packaging.
Return procedure for DMP1005UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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