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Diodes Incorporated DMP1007UCB9-7
- Part No.:
- DMP1007UCB9-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 9-UFBGA, WLBGA
- Datasheet:
-
DMP1007UCB9-7.pdf
- Description:
- MOSFET P-CH 8V 13.2A U-WLB1515-9
- Quantity:
- Payment:
- Shipping:
Inventory:6,836
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Product details
Overview
DMP1007UCB9 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in a 1.5 mm × 1.5 mm Chip-Scale Package (U-WLB1515-9), rated for -8 V VDSS, 5.7 mΩ RDS(ON) at VGS = -4.5 V, and -13.2 A continuous drain current at TA = +25°C. It serves as a high-efficiency load switch or synchronous rectifier in compact DC-DC converters and battery protection circuits.
For engineers reviewing the DMP1007UCB9 datasheet, DMP1007UCB9 pinout, DMP1007UCB9 application, or DMP1007UCB9 equivalent, key selection criteria include its ultra-low RDS(ON) per mm², 8.2 nC total gate charge for fast switching, -0.6 V typical gate threshold voltage, and thermal resistance of 82.0 °C/W on optimized PCB layout.
Technical Context
This LD-MOS device uses lateral DMOS architecture to achieve low on-resistance with minimal gate charge-enabling high-frequency operation in buck converters and OR-ing applications. Its -0.6 V VGS(TH) ensures reliable turn-on with low-voltage control logic, while the integrated body diode supports reverse-current blocking in battery management systems.
The U-WLB1515-9 package features nine solderable terminals with SnAgCu finish and 280 µm under-bump metallization, delivering 0.62 mm height and 0.0018 g mass. Thermal performance is validated per J-STD-020 Level 1 moisture sensitivity, with RθJA = 82.0 °C/W on 1-inch² 2 oz copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -8 V - maximum drain-source blocking voltage for low-voltage power rails |
| RDS(ON) | 4.7–5.7 mΩ @ VGS = -4.5 V - enables <100 mW conduction loss at 10 A |
| ID (max) | -13.2 A @ TA = +25°C - supports high-current load switching in space-constrained designs |
| Qg | 8.2 nC - minimizes gate drive power and switching transition time |
| VGS(TH) | -0.4 to -1.1 V (typ. -0.6 V) - allows direct interface with 1.8 V/3.3 V logic without level shifting |
| RθJA | 82.0 °C/W - enables 1.53 W power dissipation on standard FR-4 with 1-inch² copper |
| Ciss/Coss | 900 pF / 730 pF @ VDS = -4 V - defines input/output capacitance for snubber and loop stability design |
Pinout & Package
Package: U-WLB1515-9 (Type C), 1.5 mm × 1.5 mm footprint, 0.62 mm height, 9-terminal chip-scale package with SnAgCu terminations and 280 µm UBM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Source | Five parallel source connections reduce current density and improve thermal spreading |
| 6, 7, 8 | Drain | Three drain terminals provide low-inductance current path for high di/dt switching |
| 9 | Gate | Single gate terminal with ESD protection; requires <10 Ω series resistance for robust drive |
Key Features
| Feature | Design Value |
|---|---|
| LD-MOS technology | Delivers lowest RDS(ON) × Qg figure of merit among comparable P-channel CSP MOSFETs |
| Chip-scale packaging | 1.5 mm × 1.5 mm footprint achieves >3× higher power density vs. SO-8 equivalents |
| Low-profile construction | 0.62 mm max height enables integration into ultra-thin portable electronics |
| ESD-protected gate | HBM rating ≥2 kV ensures robustness during board assembly and handling |
| Lead-free & green compliance | Fully RoHS 3 compliant with <900 ppm Br+Cl and <1000 ppm Sb - suitable for automotive and medical end equipment |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel load switch controlling battery-to-system power path with fast turn-off response. Use Value: 5.7 mΩ RDS(ON) limits voltage drop to <60 mV at 10 A, preserving battery runtime and thermal margin. | Use Scenario: Bidirectional power path control in USB-C PD sink applications requiring 5–20 V input range. IC Role / Device Role / Timing Role: High-side switch enabling/disabling VBUS connection with <100 ns turn-off delay. Use Value: -0.6 V VGS(TH) allows direct control from USB PD controller GPIO without external level shifter. |
| Point-of-Load DC-DC Converter | Smartphone Power Management |
Use Scenario: Synchronous rectification in 3 MHz buck converter for SoC core rail. IC Role / Device Role / Timing Role: Low-side synchronous FET operating with 8.2 nC Qg and 36.4 ns tF. Use Value: 900 pF Ciss and 158 pF Crss enable stable loop compensation up to 10 MHz switching frequency. | Use Scenario: Load switching for camera module, display backlight, or RF front-end subsystems. IC Role / Device Role / Timing Role: Compact, low-RDS(ON) power gate with minimal board area consumption. Use Value: 1.5 mm × 1.5 mm CSP footprint saves >70% PCB area versus TSOP-6 alternatives while maintaining 1.53 W thermal capability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H075LW-7 | RDS(ON) = 7.5 mΩ @ -4.5 V; larger 2 mm × 2 mm WDFN package; 12.5 nC Qg | Higher conduction loss and slower switching; suited for lower-frequency, higher-current designs | Select when thermal budget allows larger footprint and gate drive strength exceeds 8.2 nC requirement |
| SIR178DP-T1-GE3 | RDS(ON) = 6.2 mΩ @ -4.5 V; SO-8 package; 17.5 nC Qg; 1.5 W PD | Lower power density and higher parasitic inductance; better for legacy board layouts | Choose only if board redesign for CSP is not feasible and SO-8 mechanical compatibility is mandatory |
Compared with DMN10H075LW-7 and SIR178DP-T1-GE3, DMP1007UCB9 delivers superior power density and switching efficiency in space-constrained, high-frequency applications-making it optimal for modern mobile and wearable power architectures where footprint and thermal performance are critical.
Availability
DMP1007UCB9 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and point-of-load DC-DC converters requiring stable component supply across production lifecycles.
Supply support for DMP1007UCB9 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
DMP1007UCB9 belongs to Diodes' LD-MOS product line, engineered specifically for ultra-high power density in portable and battery-powered applications where low RDS(ON), minimal gate charge, and chip-scale packaging are essential.
FAQ
What is the maximum safe operating junction temperature for DMP1007UCB9?
The DMP1007UCB9 has an absolute maximum junction temperature of +150°C, validated across its full operating range (-55°C to +150°C). Thermal derating begins above +125°C, and sustained operation above +135°C requires active cooling or reduced current to maintain reliability per JEDEC JESD22-A108.
Does DMP1007UCB9 require a gate resistor in typical load-switch applications?
Yes-a 5–10 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast transitions. The device's 21.4 Ω internal gate resistance and 8.2 nC Qg make it susceptible to oscillation without proper gate drive impedance matching, especially with high-speed controllers.
Can DMP1007UCB9 be used in automotive-grade designs?
DMP1007UCB9 itself is not AEC-Q101 qualified, but Diodes Incorporated offers automotive-grade variants (e.g., DMP1007UCB9Q) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. For non-automotive applications, its -55°C to +150°C rating supports industrial and consumer use cases.
How does the U-WLB1515-9 package affect PCB layout requirements?
The U-WLB1515-9 demands precise stencil aperture design (0.12 mm thickness, 0.25 mm × 0.25 mm openings) and reflow profile tuning (peak 245°C, 60 s above 220°C). Pad layout must follow Diodes' recommended 1.505 mm × 1.505 mm solder mask-defined pads with 0.5 mm solder mask dam to prevent bridging between adjacent terminals.
DMP1007UCB9-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 9-UFBGA, WLBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 5.7mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 4.5 V
- Vgs (Max):
- ±6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 900 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 840mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-WLB1515-9 (Type C)
DMP1007UCB9-7 FAQ
1.How can I place an order for DMP1007UCB9-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP1007UCB9-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP1007UCB9-7 reliable?
The price and inventory of DMP1007UCB9-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP1007UCB9-7 is usually 5 days.
3.What payment methods are accepted for DMP1007UCB9-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP1007UCB9-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP1007UCB9-7?
DMP1007UCB9-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP1007UCB9-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP1007UCB9-7?
For technical support, including DMP1007UCB9-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP1007UCB9-7 requirements.
6.How does Aetrix verify that DMP1007UCB9-7 is sourced from the original manufacturer or authorized distributors?
All DMP1007UCB9-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP1007UCB9-7 meets industry standards.
7.What is the process for return or replacement of DMP1007UCB9-7?
All DMP1007UCB9-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP1007UCB9-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP1007UCB9-7 part is unused and in its original packaging.
Return procedure for DMP1007UCB9-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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