Diodes Incorporated DMP1008UCA9-7

Overview

DMP1008UCA9 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in a Chip-Scale Package (X2-DSN1515-9), engineered for ultra-low R_DS(ON) (5.7 mΩ @ V_GS = −4.5 V), fast switching (Q_g = 9.5 nC), and low gate threshold (V_GS(TH) = −0.7 V typ.), enabling high-efficiency load switching in space-constrained DC-DC converters and battery management systems.

For engineers reviewing the DMP1008UCA9 datasheet, DMP1008UCA9 pinout, DMP1008UCA9 application, or DMP1008UCA9 equivalent, key selection criteria include its −8 V V_DSS, 1.5 mm × 1.5 mm CSP footprint, 0.34 mm height, ESD-protected gate, and thermal resistance of 55 °C/W on optimized PCB layout.

Technical Context

This LD-MOS device uses lateral DMOS architecture to achieve minimal conduction loss and rapid turn-on/turn-off-enabled by low input capacitance (C_iss = 952 pF) and optimized gate charge distribution (Q_gs = 1.1 nC, Q_gd = 1.4 nC). Its negative V_GS(TH) ensures reliable enhancement-mode operation with logic-level gate drive.

The X2-DSN1515-9 package integrates copper-nickel-gold terminals and achieves 0.34 mm profile with 1.5 mm × 1.5 mm area, delivering 2.2 W power dissipation at T_A = +25°C on 1-inch² 2 oz Cu FR-4-critical for thermally dense portable power rails.

Key Specifications

Pinout & Package

Package: X2-DSN1515-9 - 1.5 mm × 1.5 mm chip-scale package with 0.34 mm height, copper-nickel-gold terminal finish, and moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMN10H025LPS-13 and Si2301DDS-T1-GE3, DMP1008UCA9 uniquely balances ultra-low R_DS(ON), sub-millimeter height, and logic-level gate drive-making it optimal for high-density, high-efficiency 5 V/3.3 V load switching where thermal and spatial constraints dominate.

Availability

DMP1008UCA9 is available at Aetrix Electronics and suitable for DC-DC converters, battery management systems, and load switching applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support for portable electronics programs.

Supply support for DMP1008UCA9 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

DMP1008UCA9 belongs to Diodes' LD-MOS product line, designed specifically for ultra-compact, high-efficiency power switches in space- and thermal-constrained portable and battery-powered systems.

FAQ

What is the maximum continuous drain current for DMP1008UCA9 at 70°C ambient?

The maximum continuous drain current is −13 A at T_A = +70°C with V_GS = −4.5 V and mounted on a 1-inch² 2 oz Cu FR-4 PCB. This rating assumes steady-state thermal equilibrium and accounts for reduced R_DS(ON) derating and junction temperature limits up to 150°C.

Does DMP1008UCA9 require external gate resistors for stability in high-speed switching?

No external gate resistor is required for basic stability due to its low intrinsic gate resistance (R_G = 21.3 Ω) and optimized Crss/Ciss ratio. However, a 5–10 Ω series resistor is recommended when driving from weak GPIO sources to damp ringing and reduce EMI in >1 MHz applications.

How is thermal performance affected if the exposed drain pad is not soldered to PCB copper?

If the center drain pad is left unsoldered, R_θJA degrades from 55 °C/W to 105 °C/W, limiting usable power to ~0.6 W at 70°C ambient. Full thermal performance requires full-surface reflow of the exposed pad to a minimum 10 mm² thermal pad with ≥4 thermal vias to inner ground planes.

Can DMP1008UCA9 be used in reverse-voltage protection circuits?

Yes-it supports reverse-polarity protection in high-side configurations using its integrated body diode. With V_SD = −1 V at −2 A and low R_DS(ON), it delivers <100 mV forward drop in normal operation and blocks reverse current up to −8 V, provided gate is held at system ground during fault conditions.