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Diodes Incorporated DMP1009UFDF-13

Part No.:
DMP1009UFDF-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMP1009UFDF-13.pdf
Description:
MOSFET P-CH 12V 15A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,011

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Product details

Overview

DMP1009UFDF-13 from Diodes Incorporated is a 12V P-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, rated for -11A continuous drain current at VGS = -4.5V, with RDS(ON) as low as 8.3 mΩ (typ), optimized for high-efficiency power management in space-constrained battery-powered systems.

For engineers reviewing the DMP1009UFDF-13 datasheet, DMP1009UFDF-13 pinout, DMP1009UFDF-13 application, or DMP1009UFDF-13 equivalent, this device is selected for low-voltage load switching where ultra-low profile (0.6 mm), minimal PCB footprint (4 mm²), and fast switching with low gate charge (Qg = 26 nC @ VGS = -4.5V) are critical design requirements.

Technical Context

This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining robust switching performance: tD(ON) = 7.0 ns and tF = 61 ns under standard test conditions (VDS = -6V, ID = -8A, RG = 1 Ω). Its gate threshold voltage (VGS(TH) = -0.3 to -1.0 V) ensures reliable turn-on with logic-level gate drive down to -2.5 V.

The device integrates a body diode with VSD = -0.8 to -1.2 V at IS = -10 A and exhibits low dynamic parameters: Ciss = 1860 pF, Coss = 498 pF, and Crss = 416 pF at VDS = -10 V - enabling efficient operation in synchronous buck and load-switch topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -12 V - Maximum blocking voltage for 12 V rail protection and reverse-polarity circuits
RDS(ON) max 11 mΩ @ VGS = -4.5 V - Enables <100 mW conduction loss at 10 A, critical for thermal budget in compact DC-DC stages
ID max -11 A @ TA = +25°C - Supports high-current load switching in portable power banks and USB PD sink applications
Qg 26 nC @ VGS = -4.5 V - Reduces gate drive power and enables >1 MHz switching in high-frequency PMICs
RθJA 63 °C/W (with 1-inch² copper pad) - Allows 2.0 W steady-state dissipation without active cooling in handheld devices
tF 61 ns - Limits switching transition losses during turn-off in synchronous rectification

Pinout & Package

Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, thermally enhanced leadframe with exposed drain pad. RoHS-compliant NiPdAu-plated terminals.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Top View) Gate (G) Control input; requires ≤±8 V rating; low Ciss enables fast edge response with minimal gate driver loading
Pins 2, 3, 4, 5 Drain (D) Power output node; internally connected to exposed thermal pad - must be soldered to PCB copper for thermal and electrical continuity
Pin 6 Source (S) Reference node for gate drive; connects to system ground or battery negative in high-side switch configurations

Key Features

Feature Design Value
Ultra-low profile (0.6 mm height) Enables integration into <1.0 mm Z-height modules such as wearables and ultra-thin IoT sensors
4 mm² PCB footprint Reduces board area by >50% vs. SO-8 or TSOP-6 equivalents, supporting miniaturized battery management IC layouts
Low RDS(ON) at VGS = -2.5 V (19 mΩ) Ensures full enhancement with single-cell Li-ion (3.0–3.6 V) or regulated 3.3 V supply without level-shifting
Fast switching (tD(OFF) = 62.2 ns) Minimizes dead-time losses in synchronous buck converters operating above 500 kHz
Halogen- and antimony-free "Green" construction Meets IPC-1752A Class 3 material declarations and automotive OEM sustainability mandates

Applications

Battery Protection Circuit USB-C Power Delivery Sink

Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs for medical pens and Bluetooth earbuds.

IC Role / Device Role / Timing Role: High-side load switch controlling battery-to-system power path; activated only when valid voltage and temperature conditions are met.

Use Value: 11 mΩ RDS(ON) limits voltage drop to <110 mV at 10 A, preserving battery runtime and enabling accurate fuel gauging.

Use Scenario: Input power path control in portable USB-C PD adapters accepting up to 20 V input and delivering 5/9/15 V outputs.

IC Role / Device Role / Timing Role: Low-side OR-ing switch managing dual-input (wall adapter + power bank) selection with automatic priority handover.

Use Value: Fast 61 ns fall time prevents shoot-through during input switchover, ensuring clean 500 ns transition between sources.

Industrial Sensor Node Power Gating Smartphone Camera Module Supply

Use Scenario: Power gating of MEMS accelerometers and BLE radios in battery-operated condition monitoring nodes deployed in remote locations.

IC Role / Device Role / Timing Role: Load switch isolating subsystems during deep-sleep mode; controlled via GPIO from microcontroller.

Use Value: 100 nA IDSS leakage ensures <1 μA total quiescent current per switched rail, extending 10-year battery life targets.

Use Scenario: Independent power sequencing and fault isolation for multi-lens camera modules requiring separate 1.2 V, 1.8 V, and 2.8 V supplies.

IC Role / Device Role / Timing Role: Individual rail enable switch placed downstream of DC-DC converters to meet strict camera startup timing and reset coordination.

Use Value: 0.6 mm height avoids interference with stacked camera lens assemblies and allows placement directly beneath flex connectors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMG1012UVT-7 RDS(ON) = 14 mΩ @ -4.5 V; 2.5 × 2.0 mm U-DFN2025-6 package; higher RθJA (75 °C/W) Lower current rating (-7.5 A); less suitable for >8 A continuous loads Select when board layout allows slightly larger footprint and thermal margin exceeds 1.5 W
SI2301DDS-T1-BE3 RDS(ON) = 115 mΩ @ -2.5 V; SOT-23 package; 1.45 mm height; Qg = 5.5 nC Higher on-resistance increases conduction loss 10×; better for <1 A loads only Choose for cost-sensitive, low-current applications where 0.6 mm height is not required

Compared with DMG1012UVT-7 and SI2301DDS-T1-BE3, DMP1009UFDF-13 delivers superior current density (5.5 A/mm²), lowest thermal resistance among U-DFN2020 options, and optimal balance of low-voltage drive capability and high-frequency switching for next-gen portable power architectures.

Availability

DMP1009UFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery sinks, and industrial sensor node power gating requiring stable component supply across long-life production programs.

Supply support for DMP1009UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' U-DFN Logic-Level Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power management in portable and battery-powered electronics.

FAQ

What is the maximum safe operating junction temperature for DMP1009UFDF-13?

The absolute maximum junction temperature is +150°C, and the device is characterized for operation across -55°C to +150°C. Thermal design must ensure TJ remains below this limit under worst-case ambient and power dissipation conditions - verified using RθJA = 63°C/W with 1-inch² copper and RθJC = 15°C/W for board-level heatsinking.

Can DMP1009UFDF-13 be used in automotive applications?

The standard DMP1009UFDF-13 is not AEC-Q101 qualified. However, the automotive-grade variant DMP1009UFDFQ is available separately, manufactured in IATF 16949-certified facilities and qualified to AEC-Q101 for stress testing including HTGB, HTRB, and temperature cycling.

What is the recommended PCB pad layout for thermal performance?

Diodes specifies a minimum 1-inch² copper pad (2 oz) connected to the exposed drain terminal via ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) to internal ground planes. The suggested pad dimensions are provided in the datasheet: X = 0.400 mm, Y = 0.425 mm, X3 = 1.700 mm, Y4 = 2.300 mm.

Does DMP1009UFDF-13 have integrated ESD protection?

No integrated ESD protection circuitry is specified. The device meets HBM ESD rating of ±2 kV (per JEDEC JS-001), but external TVS diodes or RC filters are recommended for systems exposed to human handling or connector hot-plug events, especially in USB-C or battery interface applications.

DMP1009UFDF-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
12 V
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
11mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 8 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1860 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type F)

DMP1009UFDF-13 FAQ

1.How can I place an order for DMP1009UFDF-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP1009UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP1009UFDF-13 reliable?

The price and inventory of DMP1009UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP1009UFDF-13 is usually 5 days.

3.What payment methods are accepted for DMP1009UFDF-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP1009UFDF-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP1009UFDF-13?

DMP1009UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP1009UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP1009UFDF-13?

For technical support, including DMP1009UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP1009UFDF-13 requirements.

6.How does Aetrix verify that DMP1009UFDF-13 is sourced from the original manufacturer or authorized distributors?

All DMP1009UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP1009UFDF-13 meets industry standards.

7.What is the process for return or replacement of DMP1009UFDF-13?

All DMP1009UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP1009UFDF-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP1009UFDF-13 part is unused and in its original packaging.

Return procedure for DMP1009UFDF-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP1009UFDF-13 Tags

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