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Diodes Incorporated DMP1009UFDFQ-13

Part No.:
DMP1009UFDFQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMP1009UFDFQ-13.pdf
Description:
MOSFET P-CH 12V 11A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,742

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Product details

Overview

DMP1009UFDFQ-13 from Diodes Incorporated is a 12V P-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, rated for -11A continuous drain current at VGS = -4.5V, with RDS(ON) as low as 8.3mΩ (typ), qualified to AEC-Q101 and PPAP-capable for automotive battery and power management systems.

For engineers reviewing the DMP1009UFDFQ-13 datasheet, DMP1009UFDFQ-13 pinout, DMP1009UFDFQ-13 application, or DMP1009UFDFQ-13 equivalent, key selection criteria include its -12V VDSS, 0.6mm profile, 4mm² PCB footprint, 100% unclamped inductive switching rating, and AEC-Q101 qualification for under-hood DC-DC converter and load-switching use cases.

Technical Context

This MOSFET operates as a high-side or low-side switch in automotive power rails, leveraging its negative gate threshold (-0.3V to -1.0V) and robust avalanche capability (EAS = 31mJ, IAS = -24A). Its U-DFN2020-6 package enables compact layout while maintaining thermal resistance of RθJA = 63°C/W (with 1-inch² copper pad).

Dynamic performance is defined by Qg = 26nC at VGS = -4.5V, tF = 61ns, and Ciss = 1860pF - enabling fast, efficient switching in 12V battery-fed buck converters and reverse-polarity protection circuits where low conduction loss and controlled turn-off are critical.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS-12V - Withstands full automotive battery transients up to ISO 7637-2 Pulse 1 (-125V clamped) when used with appropriate snubbing.
RDS(ON)8.3mΩ (typ) @ VGS = -4.5V - Enables <100mW conduction loss at 10A, reducing thermal load in space-constrained modules.
ID (continuous)-11A @ TA = +25°C - Supports high-current load switching in 12V battery management units without forced air cooling.
EAS31mJ - Guarantees reliable operation under inductive turn-off stress in solenoid drivers and motor control H-bridge legs.
Qg26nC @ VGS = -4.5V - Allows efficient gate drive with standard 1A peak drivers, minimizing switching losses below 500kHz.
TJ range-55°C to +150°C - Meets extended temperature requirements for engine compartment and ADAS ECU power stages.

Pinout & Package

U-DFN2020-6 (Type F) is a 2.0mm × 2.0mm × 0.6mm leadless surface-mount package with exposed thermal pad on bottom and six terminals arranged in dual-row configuration. It features NiPdAu-plated copper leadframe, UL 94V-0 molding compound, and moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1 (D)DrainMain current path terminal; connected to high-side rail or load return; electrically tied to exposed thermal pad for enhanced heat dissipation.
2 (S)SourceReference node for gate drive; common connection point for body diode cathode and load ground in high-side switch configurations.
3 (G)GateControl input; requires negative voltage relative to source to turn on; sensitive to ESD (±8V max rating).
4 (D)Drain (redundant)Second drain connection; paralleled internally with Pin 1 to reduce package inductance and improve current sharing in high-frequency switching.
5 (S)Source (redundant)Second source connection; lowers source loop inductance and improves stability in fast-switching synchronous rectifier applications.
6 (D)Drain (redundant)Third drain connection; further reduces parasitic inductance and enhances thermal spreading across the die attach area.

Key Features

FeatureDesign Value
100% Unclamped Inductive Switching (UIS) testedValidated in production for EAS = 31mJ - eliminates need for external snubbers in relay replacement and solenoid driving.
AEC-Q101 qualification & PPAP supportMeets automotive reliability standards including HTOL, TC, HAST, and UHAST - enables direct integration into Tier-1 BMS designs.
0.6mm profile / 4mm² footprintEnables placement beneath connectors or near edge connectors in ADAS camera modules and infotainment head units.
Low RDS(ON) at low VGS19mΩ @ VGS = -2.5V - supports logic-level gate drive from 3.3V microcontrollers in always-on battery monitoring circuits.
Halogen- and antimony-free "Green" construction<900ppm Br, <900ppm Cl, <1000ppm Sb - satisfies EU ELV and China RoHS requirements for vehicle end-of-life recycling.

Applications

Battery Management System (BMS)Automotive DC-DC Converter

Use Scenario: High-side disconnect switch between 12V battery and auxiliary loads (e.g., telematics, lighting control) with reverse-polarity and overcurrent protection.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with integrated body diode providing freewheeling path during transient load dumps.

Use Value: RDS(ON) ≤ 11mΩ ensures <1.2W loss at 11A, enabling passive cooling in sealed junction boxes per ISO 16750-4.

Use Scenario: Synchronous rectifier in secondary side of isolated 12V-to-5V/3.3V flyback converter powering ADAS domain controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal; leverages fast tF = 61ns and low Qgd = 8.1nC for zero-voltage switching.

Use Value: 8.3mΩ RDS(ON) reduces conduction loss by 42% vs. Schottky diode solution, improving efficiency from 86% to 91% at 5A output.

Engine Control Unit (ECU) Power SequencingInfotainment Power Rail Switching

Use Scenario: Controlled power-up sequence for microcontroller, CAN transceiver, and sensor interface ICs using cascaded enable signals.

IC Role / Device Role / Timing Role: High-side switch enabling precise timing-controlled ramp-up of 5V/3.3V rails via PWM or GPIO-driven gate driver.

Use Value: VGS(TH) = -0.3V to -1.0V allows clean turn-on with 3.3V logic, eliminating need for level-shifting circuitry in multi-rail ECUs.

Use Scenario: Load switch for USB-C PD port power delivery and display backlight dimming in center-stack infotainment displays.

IC Role / Device Role / Timing Role: Low-profile P-channel switch placed adjacent to connector; gate driven by PMIC's enable output with soft-start control.

Use Value: 0.6mm height and 4mm² footprint allow placement within 1.5mm of board edge - critical for slim bezel mechanical designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMT6009LPSQ-13RDS(ON) = 9.5mΩ @ -4.5V; larger TSOP-6 package (3.05mm × 1.65mm); RθJA = 70°C/WLess suitable for ultra-thin modules due to 1.1mm height; better suited for manual rework or wave-soldered assemblies.Select when board-level reworkability or legacy footprint compatibility outweighs size constraints.
IPD250N12N3GATMA1RDS(ON) = 2.5mΩ @ -4.5V; TO-252 package; higher Qg = 48nC; AEC-Q101 qualifiedHigher thermal mass supports >20A continuous but requires ≥10mm² copper pour; unsuitable for dense ADAS PCBs.Select only for high-current (>15A), non-space-constrained automotive power stages where lowest RDS(ON) is primary.

Compared with DMT6009LPSQ-13 and IPD250N12N3GATMA1, DMP1009UFDFQ-13 uniquely balances ultra-low profile (0.6mm), minimal footprint (4mm²), and automotive-grade reliability - making it optimal for next-generation compact BMS and domain controller power stages where board area and z-height are constrained.

Availability

DMP1009UFDFQ-13 is available at Aetrix Electronics and suitable for automotive battery management, DC-DC converter design, and ECU power sequencing requiring stable component supply across long production lifecycles.

Supply support for DMP1009UFDFQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMP1009UFDFQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for high-reliability 12V battery-fed power switching in harsh-temperature environments such as engine compartments and ADAS sensor modules.

FAQ

What is the maximum safe operating temperature for DMP1009UFDFQ-13 in continuous operation?

The device has a maximum junction temperature (TJ) of +150°C and is rated for continuous operation from -55°C to +150°C. Under typical PCB conditions (FR-4, 2oz copper, 1-inch² pad), its thermal resistance is RθJA = 63°C/W, allowing ~1.2W dissipation before reaching TJ = 150°C at TA = 85°C ambient - sufficient for most automotive under-hood applications without active cooling.

Does DMP1009UFDFQ-13 require a gate resistor for automotive EMI compliance?

Yes - a 10Ω to 22Ω series gate resistor is recommended to dampen ringing caused by fast switching (tF = 61ns) and minimize radiated emissions in CAN/LIN bus proximity. The low Qgd = 8.1nC and moderate Ciss = 1860pF make it compatible with standard gate drivers without excessive drive power demand.

Can DMP1009UFDFQ-13 be used in bidirectional current applications?

No - it is a unidirectional P-channel MOSFET optimized for source-to-drain current flow. While its body diode conducts from source to drain, the device lacks symmetrical RDS(ON) in reverse conduction and is not characterized for reverse-biased operation. Bidirectional switching requires complementary N/P pairs or dedicated bidirectional switches.

Is the exposed thermal pad on DMP1009UFDFQ-13 electrically connected to any internal node?

Yes - the exposed pad is internally connected to the drain (pins 1, 4, and 6). It must be soldered to a large copper pour tied to the drain net for both thermal performance and electrical integrity. Floating or grounding the pad will cause catastrophic failure due to voltage breakdown across the mold compound.

DMP1009UFDFQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
12 V
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
11mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 8 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1860 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type F)

DMP1009UFDFQ-13 FAQ

1.How can I place an order for DMP1009UFDFQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP1009UFDFQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP1009UFDFQ-13 reliable?

The price and inventory of DMP1009UFDFQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP1009UFDFQ-13 is usually 5 days.

3.What payment methods are accepted for DMP1009UFDFQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP1009UFDFQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP1009UFDFQ-13?

DMP1009UFDFQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP1009UFDFQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP1009UFDFQ-13?

For technical support, including DMP1009UFDFQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP1009UFDFQ-13 requirements.

6.How does Aetrix verify that DMP1009UFDFQ-13 is sourced from the original manufacturer or authorized distributors?

All DMP1009UFDFQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP1009UFDFQ-13 meets industry standards.

7.What is the process for return or replacement of DMP1009UFDFQ-13?

All DMP1009UFDFQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP1009UFDFQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP1009UFDFQ-13 part is unused and in its original packaging.

Return procedure for DMP1009UFDFQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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