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Diodes Incorporated DMP1010UCA4-7
- Part No.:
- DMP1010UCA4-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 4-SMD, No Lead
- Datasheet:
-
DMP1010UCA4-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V X2-DSN1212-
- Quantity:
- Payment:
- Shipping:
Inventory:2,697
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Product details
Overview
DMP1010UCA4 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in a 1.2 mm × 1.2 mm Chip-Scale Package (X2-DSN1212-4), designed for ultra-low RDS(ON) and fast switching in space-constrained battery protection circuits. It delivers 9.9 mΩ @ VGS = −4.5 V, −10 A continuous drain current at +25°C, and −0.80 V typical gate threshold voltage for low-voltage turn-on in portable power management.
For engineers reviewing the DMP1010UCA4 datasheet, DMP1010UCA4 pinout, DMP1010UCA4 application, or DMP1010UCA4 equivalent, this device is selected for high-density load switching where thermal performance, gate charge (7.0 nC), and sub-1V turn-on behavior directly impact system efficiency and battery runtime in compact Li-ion systems.
Technical Context
This LD-MOS device uses lateral conduction architecture to achieve minimal RDS(ON) per unit area and low gate charge-enabling efficient operation in battery-side load switches and protection FETs. Its −8 V VDSS, −6 V VGSS, and 0.35 mm profile support integration into thin-profile portable electronics.
The X2-DSN1212-4 package features NiAu-plated terminals, Level 1 moisture sensitivity, and a thermally optimized copper pad layout. Junction-to-ambient thermal resistance is 71.7 °C/W on 1-inch² 2 oz Cu, enabling 1.75 W steady-state dissipation under defined PCB conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −8 V: Maximum drain-source blocking voltage compatible with single-cell Li-ion (≤4.2 V) and dual-cell configurations with margin. |
| RDS(ON) | 9.9 mΩ @ VGS = −4.5 V: Enables ≤10 mΩ on-resistance in <1.44 mm² footprint, minimizing I²R loss in 1–3 A load paths. |
| ID (max) | −10 A @ TA = +25°C: Supports high-current battery disconnect or reverse-polarity protection without external heatsinking. |
| Qg | 7.0 nC: Low gate charge enables fast turn-on/turn-off (tD(ON) = 17.5 ns, tF = 17.5 ns) with minimal drive power. |
| VGS(TH) | −0.80 V typ.: Allows direct control from low-voltage logic (e.g., 1.2 V or 1.8 V GPIO) without level-shifting circuitry. |
| TJ range | −55°C to +150°C: Qualified for extended industrial and automotive cabin environments with stable RDS(ON) tracking. |
Pinout & Package
Package: X2-DSN1212-4 - 1.2 mm × 1.2 mm chip-scale package with 0.35 mm height, NiAu-plated terminals, and exposed silicon sidewall (non-isolated).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | Gate (G) | Control input; accepts −0.8 V threshold turn-on; ESD-protected; requires no external gate resistor for basic switching. |
| A2/B2 | Source (S) | Reference node for gate drive; connected to battery positive in high-side load switch configuration. |
| A3/B3 & B1 | Drain (D) | Power output terminal; paralleled pins reduce current density and improve thermal spreading in high-current paths. |
Key Features
| Feature | Design Value |
|---|---|
| LD-MOS low FoM architecture | Combines 9.9 mΩ RDS(ON) and 7.0 nC Qg to minimize switching + conduction losses in battery-fed DC loads. |
| Ultra-low profile CSP | 0.35 mm height enables use in <1 mm-thick devices such as wearables and hearing aids where board clearance is critical. |
| ESD-protected gate | HBM rating ≥2 kV (implied by ESD Protected Gate claim); reduces risk of handling damage during SMT assembly. |
| Lead-free & Green compliance | Fully RoHS 3 compliant with <900 ppm Br/Cl and <1000 ppm Sb; meets environmental requirements for global consumer electronics. |
Applications
| Battery Protection IC Interface | Smartphone Main Battery Switch |
|---|---|
Use Scenario: Integrated into overvoltage/overcurrent protection circuits between battery pack and system PMIC. IC Role / Device Role / Timing Role: High-side load switch controlled by protection IC's GATE signal to isolate battery during fault conditions. Use Value: 9.9 mΩ RDS(ON) limits voltage drop to <10 mV at 1 A, preserving battery gauge accuracy and reducing thermal stress on adjacent components. |
Use Scenario: Placed between single-cell Li-ion battery and application processor power rail in slim smartphones. IC Role / Device Role / Timing Role: Reverse-polarity and short-circuit protection FET activated during boot or thermal shutdown. Use Value: −0.80 V VGS(TH) allows direct control from 1.2 V PMIC GPIO, eliminating level shifters and saving PCB area. |
| Wireless Earbud Charging Case | Portable Medical Sensor Power Path |
Use Scenario: Load switch managing power delivery from internal Li-ion to USB-C charging IC and earbud cradle contacts. IC Role / Device Role / Timing Role: Bidirectional power path controller (with external diode) enabling charge/discharge isolation. Use Value: 1.2 mm × 1.2 mm footprint fits within tight 5 mm × 5 mm charging case PCB zones while sustaining 3 A pulsed loads. |
Use Scenario: Isolating sensor module power during sleep mode in FDA-cleared wearable glucose monitors. IC Role / Device Role / Timing Role: Low-leakage (−1 μA IDSS) power gate enabling multi-week standby battery life. Use Value: −1 μA zero-gate-voltage leakage minimizes quiescent current drain, extending shelf life and field deployment duration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H015LPS-13 | Higher RDS(ON) (15 mΩ @ −4.5 V), larger 2 mm × 2 mm SO-8 package, higher Qg (12 nC). | Suitable for less space-constrained industrial modules where thermal mass compensates for higher on-resistance. | Select when board area >4× larger is available and gate drive strength exceeds 7.0 nC requirement. |
| AO3415 | Lower VDSS (−20 V), higher RDS(ON) (45 mΩ @ −4.5 V), SOT-23 package, no CSP thermal advantage. | Used in cost-sensitive, non-compact designs where 100% footprint reduction is not required. | Choose only if design tolerates >4× higher conduction loss and lacks thermal constraints. |
Compared with DMN10H015LPS-13 and AO3415, DMP1010UCA4 provides the lowest RDS(ON)/area ratio and fastest switching in its class-critical for miniaturized battery systems where every milliwatt and square millimeter matters.
Availability
DMP1010UCA4 is available at Aetrix Electronics and suitable for battery protection, portable medical devices, and wireless audio accessories requiring stable component supply across production lifecycles.
Supply support for DMP1010UCA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers and manufacturing facilities across Asia and the Americas.
This device belongs to Diodes' LD-MOS portfolio-engineered specifically for high-efficiency, ultra-compact power switching in battery-powered consumer and portable electronics.
FAQ
What is the maximum continuous drain current at +70°C ambient?
The DMP1010UCA4 supports −8 A continuous drain current at TA = +70°C when mounted on FR-4 with 1-inch² 2 oz copper, per Note 7 in the datasheet. This derating reflects thermal resistance of 71.7 °C/W and ensures junction temperature remains below 150°C under steady-state operation.
Is the X2-DSN1212-4 package solderable using standard reflow profiles?
Yes-the X2-DSN1212-4 uses NiAu-plated terminals qualified per MIL-STD-202, Method 208, and is compatible with standard lead-free reflow profiles (peak 260°C). Its Level 1 moisture sensitivity eliminates bake requirements prior to assembly.
Does this MOSFET include body diode functionality for reverse-current blocking?
Yes-the intrinsic body diode enables source-to-drain conduction when VSD > 0.66 V (typical forward voltage at −1 A). In battery protection, this allows automatic reverse-current blocking when the drain is held at lower potential than the source, supporting true bidirectional isolation in conjunction with external control logic.
Can DMP1010UCA4 be used in automotive cabin applications?
While not AEC-Q101 qualified out-of-box, Diodes offers automotive-grade variants of this platform. For cabin applications up to +105°C ambient, the device's −55°C to +150°C TJ range and stable RDS(ON) vs. temperature performance support qualification-ready designs pending customer validation and change control coordination.
DMP1010UCA4-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 4-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 9.9mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7 nC @ 4.5 V
- Vgs (Max):
- -6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 699 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 630mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DSN1212-4
DMP1010UCA4-7 FAQ
1.How can I place an order for DMP1010UCA4-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP1010UCA4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP1010UCA4-7 reliable?
The price and inventory of DMP1010UCA4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP1010UCA4-7 is usually 5 days.
3.What payment methods are accepted for DMP1010UCA4-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP1010UCA4-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP1010UCA4-7?
DMP1010UCA4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP1010UCA4-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP1010UCA4-7?
For technical support, including DMP1010UCA4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP1010UCA4-7 requirements.
6.How does Aetrix verify that DMP1010UCA4-7 is sourced from the original manufacturer or authorized distributors?
All DMP1010UCA4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP1010UCA4-7 meets industry standards.
7.What is the process for return or replacement of DMP1010UCA4-7?
All DMP1010UCA4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP1010UCA4-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP1010UCA4-7 part is unused and in its original packaging.
Return procedure for DMP1010UCA4-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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