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Diodes Incorporated DMP1012USS-13
- Part No.:
- DMP1012USS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
DMP1012USS-13.pdf
- Description:
- MOSFET BVDSS: 8V-24V SO-8 T&R 2.
- Quantity:
- Payment:
- Shipping:
Inventory:3,258
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Product details
Overview
DMP1012USS from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -12V VDSS, with 15 mΩ RDS(ON) at VGS = -4.5V and -8.5A continuous drain current at TA = +25°C, housed in an SO-8 package. It delivers low conduction loss and fast switching for compact DC-DC converters and motor control stages.
For engineers reviewing the DMP1012USS datasheet, DMP1012USS pinout, DMP1012USS application, or DMP1012USS equivalent, key selection criteria include verified RDS(ON) vs. gate voltage curve, SO-8 thermal performance under 77°C/W RθJA (with copper pad), body diode recovery charge (QRR = 44 nC), and avalanche energy rating (EAS = 22 mJ).
Technical Context
This MOSFET operates as a high-side load switch or synchronous rectifier in buck converters, leveraging its negative threshold voltage (-0.4 to -1.0 V) and low input capacitance (Ciss = 1344 pF) to minimize drive losses. Its gate charge profile (Qg = 19.5 nC at VGS = -4.5V) supports efficient PWM operation up to several hundred kHz.
The device integrates a robust intrinsic body diode with VSD = -0.8 to -1.2 V at -1 A and tRR = 46 ns, enabling freewheeling in inductive loads without external diode supplementation. Thermal design is validated for FR-4 PCBs with 1-inch² copper plate (RθJA = 77°C/W) and junction temperature range of -55°C to +150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -12 V - Maximum blocking voltage for 12V rail-level high-side switching |
| RDS(ON) | 15 mΩ @ VGS = -4.5V - Enables ≤128 mW conduction loss at 8.5 A |
| ID (cont) | -8.5 A @ TA = +25°C - Sustains full-load current in space-constrained power stages |
| Qg | 19.5 nC @ VGS = -4.5V - Determines gate driver current requirement for <32 ns rise time |
| EAS | 22 mJ - Supports single-pulse inductive energy absorption without failure |
| Ciss | 1344 pF - Sets Miller effect magnitude and influences gate drive stability |
| tRR | 46 ns - Limits reverse recovery loss during synchronous rectification |
Pinout & Package
Package: SO-8 (Surface-mount, 8-pin small-outline integrated circuit), compliant with JEDEC MS-012, moisture sensitivity level 3 per J-STD-020, UL 94V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires -4.5V to fully enhance; Rg = 15 Ω limits ringing |
| 2 (S) | Source | Reference node for gate drive; tied to input rail in high-side configuration |
| 3 (S) | Source | Second source connection; paralleled internally to reduce package inductance |
| 4 (S) | Source | Third source connection; enhances current sharing and thermal spreading |
| 5 (D) | Drain | Switched output node; connected to load or inductor; handles -40 A pulsed current |
| 6 (D) | Drain | Second drain connection; reduces conduction path resistance and thermal gradient |
| 7 (D) | Drain | Third drain connection; improves current distribution across SO-8 footprint |
| 8 (D) | Drain | Fourth drain connection; enables low-inductance layout for high-frequency switching |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low |VGS| | 20 mΩ @ -3.7V enables logic-level drive from 3.3V microcontrollers |
| Optimized gate charge | Qgd/Qgs ratio of 3.8 ensures clean turn-on/turn-off with minimal shoot-through risk |
| Robust avalanche capability | IAS = -21 A with EAS = 22 mJ allows unclamped inductive switching without derating |
| Thermally enhanced SO-8 | RθJC = 13°C/W enables direct heat transfer to PCB copper plane |
| Green material set | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) |
Applications
| Motor Control | Backlight LED Driver |
|---|---|
Use Scenario: H-bridge upper-leg switch in 12V brushed DC motor drivers for robotics and industrial actuators. IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing bidirectional current control with dead-time managed by external logic. Use Value: 15 mΩ RDS(ON) minimizes I²R heating at 6–8 A peak, extending battery life and reducing heatsink need. |
Use Scenario: PWM dimming switch in automotive LCD backlight inverters using boost-derived 12V supply. IC Role / Device Role / Timing Role: Constant-current sink modulator operating at 1–5 kHz with fast fall time (tF = 85 ns). Use Value: Low Qg and Coss enable crisp edge transitions, reducing EMI and improving dimming linearity. |
| DC-DC Buck Converter | Power Management Load Switch |
Use Scenario: Synchronous rectifier in 12V-to-5V/3.3V point-of-load converters for FPGA and SoC power rails. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode; driven complementarily to high-side N-MOSFET. Use Value: Body diode VSD = -0.8 V and tRR = 46 ns cut conduction loss by >40% vs. discrete diode solution. |
Use Scenario: Inrush-limited hot-swap controller for USB-C PD accessory ports and peripheral modules. IC Role / Device Role / Timing Role: Controlled high-side disconnect switch with soft-start via gate resistor network. Use Value: Guaranteed VGS(TH) range (-0.4 to -1.0 V) ensures reliable turn-on even with aging or temperature drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H120SFD-13 | N-channel counterpart with 120V rating and 10mΩ RDS(ON); requires high-side gate driver | Suitable only where bootstrap or isolated gate drive is available; not drop-in for logic-level P-ch use | Select when higher voltage margin (>12V) and lower RDS(ON) justify added driver complexity |
| SI2301DS-T1-BE3 | P-channel, -20V, 115mΩ @ -4.5V, SOT-23 package; 1/3 the current rating and 8× higher RDS(ON) | Limited to sub-2A loads; unsuitable for motor or converter primary switching | Choose only for ultra-low-cost, low-power bias or signal switching where SO-8 footprint is unnecessary |
Compared with DMN10H120SFD-13 and SI2301DS-T1-BE3, DMP1012USS uniquely balances -12V rating, 15mΩ on-resistance, SO-8 thermal capability, and logic-level gate drive-making it optimal for cost-sensitive, medium-current 12V power stages without gate driver overhead.
Availability
DMP1012USS is available at Aetrix Electronics and suitable for motor control, backlight LED drivers, and DC-DC buck converters requiring stable component supply and RoHS-compliant manufacturing.
Supply support for DMP1012USS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
DMP1012USS belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, medium-voltage power conversion in consumer, industrial, and automotive subsystems where compact size and thermal reliability are critical.
FAQ
What is the maximum safe operating junction temperature for DMP1012USS?
The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation across -55°C to +150°C. Derating begins at TJ > 125°C per the RθJA = 77°C/W curve with 1-inch² copper; sustained operation above 135°C requires thermal simulation or IR measurement.
Can DMP1012USS be used in linear regulator applications?
No-it is optimized for switching operation, not linear mode. Its Safe Operating Area (SOA) chart shows DC limitation at VDS > 3V and ID > 2A due to thermal runaway risk; linear regulation would exceed power dissipation limits without active cooling.
Is the body diode suitable for reverse polarity protection?
Yes-the intrinsic body diode has VSD = -0.8 to -1.2 V at -1 A and is rated for continuous forward current up to -2 A. For reverse polarity protection, connect source to input and drain to load; ensure peak reverse voltage stays within -12V.
Does DMP1012USS require a gate resistor in typical PWM applications?
Yes-a series gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by Lg–Ciss resonance and limit peak gate current. The datasheet specifies Rg = 1 Ω for timing measurements, but real-world layouts benefit from controlled slew rate to reduce EMI.
DMP1012USS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.5 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1344 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
DMP1012USS-13 FAQ
1.How can I place an order for DMP1012USS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP1012USS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP1012USS-13 reliable?
The price and inventory of DMP1012USS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP1012USS-13 is usually 5 days.
3.What payment methods are accepted for DMP1012USS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP1012USS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP1012USS-13?
DMP1012USS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP1012USS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP1012USS-13?
For technical support, including DMP1012USS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP1012USS-13 requirements.
6.How does Aetrix verify that DMP1012USS-13 is sourced from the original manufacturer or authorized distributors?
All DMP1012USS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP1012USS-13 meets industry standards.
7.What is the process for return or replacement of DMP1012USS-13?
All DMP1012USS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP1012USS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP1012USS-13 part is unused and in its original packaging.
Return procedure for DMP1012USS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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