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Diodes Incorporated DMP1022UFDE-7
- Part No.:
- DMP1022UFDE-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMP1022UFDE-7.pdf
- Description:
- MOSFET P-CH 12V 9.1A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,743
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Product details
Overview
DMP1022UFDE-7 from Diodes Incorporated is a 12V P-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type E) package, optimized for battery management systems. It delivers RDS(ON) = 16 mΩ @ VGS = −4.5 V, supports −9.1 A continuous drain current at 25°C, and features low gate threshold voltage (−0.35 to −0.8 V) for efficient low-voltage control in portable power paths.
For engineers reviewing the DMP1022UFDE-7 datasheet, DMP1022UFDE-7 pinout, DMP1022UFDE-7 application, or DMP1022UFDE-7 equivalent, key selection criteria include its 0.6 mm profile, AEC-Q101 qualification, ESD protection (3 kV), fast switching (tF = 93–139 ns), and thermal performance (RθJA = 61 °C/W with thermal vias).
Technical Context
This MOSFET operates as a high-side load switch or reverse-polarity protection device in Li-ion battery packs and USB-C power delivery circuits. Its negative VGS(TH) enables direct interface with 1.8–3.3 V logic controllers without level shifting, while the integrated body diode supports bidirectional current flow in charge/discharge paths.
The device uses a trench-gate process to achieve low RDS(ON) at low gate drive voltages and exhibits stable on-resistance over temperature (±15% variation from −55°C to +150°C). Its Ciss = 2953 pF and Qg = 25.3–42.6 nC support controlled turn-on/turn-off timing in high-frequency switching applications up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −12 V: Maximum drain-source blocking voltage for 1-cell Li-ion (4.2 V) and 2-cell (8.4 V) battery systems with margin. |
| RDS(ON) | 16 mΩ @ VGS = −4.5 V: Enables <150 mW conduction loss at 9.1 A, critical for thermal management in compact battery packs. |
| ID (Continuous) | −9.1 A @ TA = 25°C: Supports high-current load switching in portable medical devices and power banks. |
| VGS(TH) | −0.35 to −0.8 V: Ensures reliable turn-on with standard GPIOs and low-power microcontrollers. |
| tF | 93–139 ns: Limits switching losses during frequent on/off cycles in dynamic power path control. |
| Qg | 25.3–42.6 nC: Determines gate driver strength requirement; compatible with low-power drivers like TC7662 or MAX16126. |
| RθJA | 61 °C/W (with thermal vias): Allows 2.03 W power dissipation on 2 oz copper PCB-enables operation without heatsink in space-constrained designs. |
Pinout & Package
U-DFN2020-6 (Type E) package: 2.0 × 2.0 mm footprint, 0.6 mm height, NiPdAu-plated terminals, moisture sensitivity level 1. Exposed drain pad (Pin 6) provides primary thermal path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Reference node for gate drive; connects to battery positive in high-side switch configuration. |
| 2 (G) | Gate | Control input; requires no external pull-down due to low |VGS(TH)| and internal ESD diode protection. |
| 3 (D) | Drain | Switched output node; ties to system load or downstream protection circuitry. |
| 4 (S) | Source | Second source connection-bond-wire paralleled with Pin 1 to reduce source inductance and improve current sharing. |
| 5 (G) | Gate | Second gate connection-reduces gate loop inductance for faster edge rates and lower EMI. |
| 6 (D) | Drain / Thermal Pad | Exposed drain terminal; must be soldered to large copper pour for thermal dissipation and EMI reduction. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables integration into ultra-thin battery packs (<1.2 mm total height) and wearable electronics. |
| AEC-Q101 qualified | Validated for automotive-grade reliability (−40°C to +125°C operation, HTOL, TC, HTRB), suitable for e-bike BMS and ADAS auxiliary power. |
| ESD protection: 3 kV HBM | Eliminates need for external TVS diodes in handheld device assembly lines, reducing BOM count and board area. |
| Low RDS(ON) at VGS = −1.5 V (32 mΩ) | Supports operation from single-cell alkaline or NiMH batteries (1.5 V nominal) without boost circuitry. |
| Green, halogen-free, RoHS-compliant | Meets IPC-1752A material declaration requirements for EU medical and consumer electronics compliance reporting. |
Applications
| Battery Reverse Polarity Protection | USB-C Power Path Management |
|---|---|
Use Scenario: Preventing damage when user inserts rechargeable battery backward into a medical sensor or IoT node. IC Role / Device Role / Timing Role: High-side P-channel MOSFET configured as ideal diode replacement, conducting only when VIN > VOUT + |VGS(TH)|. Use Value: Eliminates 300–500 mV forward drop of Schottky diodes, extending runtime by 5–8% in 3.7 V Li-ion systems. | Use Scenario: Selecting between USB host power and internal battery during charging/discharging in portable test equipment. IC Role / Device Role / Timing Role: Load switch controlling power routing between VBUS and battery rail, coordinated with fuel gauge IC via GPIO. Use Value: Fast tF ensures <150 ns transition between sources, preventing brownout during hot-swap events. |
| Portable Medical Device Power Sequencing | E-Bike Battery Management System |
Use Scenario: Enabling regulated 3.3 V supply only after battery voltage exceeds 3.0 V and MCU firmware validates cell health. IC Role / Device Role / Timing Role: Controlled high-side switch activated by microcontroller GPIO, with body diode providing fail-safe discharge path. Use Value: Low VGS(TH) allows direct drive from 3.3 V MCU pins-no level shifter required, saving 0.5 mm² PCB area. | Use Scenario: Isolating individual 3.7 V Li-ion cells during balancing cycles in 10S e-bike battery packs. IC Role / Device Role / Timing Role: Cell-level protection switch placed between cell tap and balancer IC, rated for 7.1 A pulsed current per AEC-Q101 stress tests. Use Value: RDS(ON) = 16 mΩ limits I²R heating to <1.0 W at 8 A, avoiding thermal derating in sealed battery enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1022UDM-7 | Same RDS(ON) (16 mΩ @ −4.5 V) but in SOT-23-6; higher RθJA = 189 °C/W (no thermal pad). | Limited to ≤1.5 W continuous use; unsuitable for >5 A sustained loads without forced air. | Select when board space permits larger footprint and thermal design cannot accommodate U-DFN mounting. |
| Si2301DDS-T1-GE3 | Higher RDS(ON) = 115 mΩ @ −4.5 V; lower ID = −2.6 A; no AEC-Q101 qualification. | Only viable for low-current backup supplies (<1 A); lacks automotive reliability validation. | Choose only for cost-sensitive consumer products where AEC-Q101 and thermal performance are non-critical. |
Compared with DMG1022UDM-7 and Si2301DDS-T1-GE3, DMP1022UFDE-7 uniquely combines AEC-Q101 qualification, 0.6 mm profile, and 61 °C/W thermal resistance-making it the sole option for thermally constrained, automotive-grade battery switches requiring >7 A continuous current.
Availability
DMP1022UFDE-7 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and portable medical devices requiring stable component supply across multi-year production cycles.
Supply support for DMP1022UFDE-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
This part belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power control in battery-powered and automotive applications-emphasizing low RDS(ON), fast switching, and AEC-Q101 reliability.
FAQ
What is the maximum safe operating junction temperature for DMP1022UFDE-7?
The absolute maximum junction temperature is +150°C per the datasheet. Derating begins at +125°C ambient when mounted on a 2 oz copper board with thermal vias; at 70°C ambient, the device supports full 9.1 A continuous current. Operation above 150°C risks permanent parametric shift and gate oxide degradation.
Can DMP1022UFDE-7 be used in linear regulation mode?
No-it is not characterized or guaranteed for linear (ohmic) operation. The Safe Operating Area (SOA) curve shows limited DC capability (≤0.66 W without thermal vias), and RDS(ON) variation with temperature introduces instability in feedback loops. Use only in saturated switching mode for load switching or reverse polarity protection.
Is the exposed drain pad electrically isolated from other terminals?
No-the exposed pad (Pin 6) is internally connected to the drain. It must be soldered to a PCB copper pour tied to the drain net for both thermal conduction and electrical continuity. Floating or grounding the pad will cause catastrophic failure due to voltage breakdown between drain and substrate.
Does DMP1022UFDE-7 require a gate resistor for EMI suppression?
A 10–22 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 678 pF) and PCB trace inductance. Without it, fast edges (tR = 28–42 ns) can excite parasitic resonances above 100 MHz, failing CISPR-22 Class B emissions limits in handheld devices.
DMP1022UFDE-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42.6 nC @ 5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2953 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 660mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMP1022UFDE-7 FAQ
1.How can I place an order for DMP1022UFDE-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP1022UFDE-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP1022UFDE-7 reliable?
The price and inventory of DMP1022UFDE-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP1022UFDE-7 is usually 5 days.
3.What payment methods are accepted for DMP1022UFDE-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP1022UFDE-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP1022UFDE-7?
DMP1022UFDE-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP1022UFDE-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP1022UFDE-7?
For technical support, including DMP1022UFDE-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP1022UFDE-7 requirements.
6.How does Aetrix verify that DMP1022UFDE-7 is sourced from the original manufacturer or authorized distributors?
All DMP1022UFDE-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP1022UFDE-7 meets industry standards.
7.What is the process for return or replacement of DMP1022UFDE-7?
All DMP1022UFDE-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP1022UFDE-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP1022UFDE-7 part is unused and in its original packaging.
Return procedure for DMP1022UFDE-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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