Diodes Incorporated DMP1022UFDF-13
- Part No.:
- DMP1022UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP1022UFDF-13.pdf
- Description:
- MOSFET P-CH 12V 9.5A 6UDFN
- Quantity:
- Payment:

- Shipping:

Inventory:6,836
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMP1022UFDF-13 from Diodes Incorporated is a -12V P-channel enhancement-mode MOSFET optimized for battery management systems, featuring 14.8mΩ RDS(ON) at VGS = -4.5V, -9.5A continuous drain current at 25°C, and U-DFN2020-6 (Type F) package with 0.6mm profile. It serves as a high-efficiency load switch or reverse-polarity protection device in portable power rails.
For engineers reviewing the DMP1022UFDF-13 datasheet, DMP1022UFDF-13 pinout, DMP1022UFDF-13 application, or DMP1022UFDF-13 equivalent, key selection criteria include low gate threshold voltage (-0.35V to -0.8V), ESD-protected gate, fast switching (tD(ON) = 25.1ns), thermal resistance (RθJA = 59°C/W with thermal vias), and compliance with RoHS, halogen-free, and antimony-free requirements.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low on-resistance and stable threshold voltage across temperature. Its negative VGS(TH) enables direct control from common microcontroller GPIOs without level-shifting in high-side switch configurations.
The integrated source-drain diode (VSD = -0.8V at -8A) supports bidirectional current handling in battery charge/discharge paths, while the 2.712nF input capacitance and 48.3nC total gate charge (at VGS = -8V) define drive strength and switching loss trade-offs in DC-DC and power-path applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -12V - Maximum blocking voltage for battery-side overvoltage protection up to 12V systems |
| RDS(ON) | 14.8mΩ @ VGS = -4.5V - Enables <100mW conduction loss at 9.5A, critical for thermally constrained PCBs |
| ID (cont) | -9.5A @ TA = +25°C - Supports high-current load switching in compact 4mm² footprint |
| VGS(TH) | -0.35V to -0.8V - Ensures reliable turn-on with 3.3V or 5V logic-level gate drive |
| RθJA | 59°C/W (with thermal vias) - Allows 2.1W power dissipation in standard FR-4 layout with copper pour |
| Ciss | 2712pF - Determines required gate driver current for sub-100ns switching transitions |
| Qg | 28.6nC @ VGS = -4.5V - Sets minimum gate drive energy for efficient PWM operation at >100kHz |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0mm × 2.0mm × 0.6mm, 6-terminal leadless plastic package with NiPdAu-plated terminals and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; ESD-protected; requires ≤±8V drive; low threshold enables direct MCU interface |
| 2 (S) | Source | Reference node for gate drive; tied to system ground or battery negative in high-side configuration |
| 3 (D) | Drain | Power output terminal; connects to battery positive or load; handles -9.5A continuous current |
| 4 (S) | Source (exposed pad) | Thermal and electrical connection to PCB copper; must be soldered to thermal pad for RθJA = 59°C/W |
| 5 (D) | Drain (exposed pad) | Secondary drain connection; electrically tied to Pin 3; enhances current sharing and thermal conduction |
| 6 (G) | Gate (redundant) | Second gate terminal for improved gate loop inductance control; connected internally to Pin 1 |
Key Features
| Feature | Design Value |
|---|---|
| 0.6mm profile | Enables integration into ultra-thin portable electronics where Z-height is constrained to <1mm |
| 4mm² PCB footprint | Reduces board area by >50% vs. SO-8 equivalents, supporting dense battery management IC layouts |
| ESD-protected gate | HBM rating ≥2kV ensures robustness during assembly and field operation without external protection |
| Low RDS(ON) at low VGS | 19mΩ @ -2.5V allows use with weak-drive controllers (e.g., PMIC LDO outputs) in always-on circuits |
| Halogen & antimony free | Meets IPC-1752A Class 3 reporting; Br+Cl <1500ppm, Sb <1000ppm - required for EU automotive Tier 1 supply chains |
Applications
| Battery Reverse-Polarity Protection | USB-C Power Path Management |
|---|---|
Use Scenario: Preventing damage when Li-ion battery packs are inserted backward into handheld medical devices. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as an active rectifier, placed between battery connector and system input rail. Use Value: Eliminates 0.3–0.7V diode drop, preserving >98% of battery voltage under 8A load while enabling fast fault response via gate control. | Use Scenario: Enabling dual-role power delivery (DRP) in portable test equipment that alternates as USB-C host/peripheral. IC Role / Device Role / Timing Role: Load switch controlling VBUS path direction; coordinated with USB PD controller to isolate upstream/downstream power domains. Use Value: 25.1ns turn-on delay and 147ns fall time support dynamic reconfiguration within USB PD 3.0 timing budgets (<500ms). |
| Smart Battery Fuel Gauge Interface | Wireless Charging Receiver Power Switch |
Use Scenario: Isolating fuel gauge IC (e.g., MAX17055) from main system during deep sleep to reduce quiescent current. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤ -200nA at 25°C) high-side switch placed between battery and fuel gauge VDD rail. Use Value: Cuts system sleep current by >1µA versus Schottky solutions, extending shelf life of sealed IoT sensors. | Use Scenario: Enabling/disabling power delivery from Qi-compliant wireless receiver IC (e.g., BQ51222) to system PMIC during charging cycles. IC Role / Device Role / Timing Role: Fast-switching P-MOSFET controlled by wireless charging controller's enable signal to manage power-path sequencing. Use Value: 48.3nC Qg at -8V allows clean 200kHz PWM gating without shoot-through risk in synchronous rectifier auxiliary supplies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1022UFD-7 | RDS(ON) = 15.5mΩ @ -4.5V; same U-DFN2020-6 package; no ESD protection on gate | Lacks integrated ESD diode - requires external TVS in high-noise industrial environments | Select when cost sensitivity outweighs ESD robustness needs and board space permits external protection |
| Si2301DDS-T1-GE3 | RDS(ON) = 115mΩ @ -4.5V; SOT-23 package; higher RθJA = 220°C/W | Higher conduction loss and thermal resistance limit to ≤2A continuous loads | Choose only for legacy SOT-23 footprints where board redesign is prohibited and current demand is <2.5A |
Compared with DMG1022UFD-7 and Si2301DDS-T1-GE3, DMP1022UFDF-13 delivers superior thermal performance (59°C/W vs. ≥220°C/W), lower on-resistance (14.8mΩ vs. 115mΩ), and built-in ESD protection - making it the optimal choice for space-constrained, high-reliability battery management designs requiring >6A continuous current.
Availability
DMP1022UFDF-13 is available at Aetrix Electronics and suitable for battery-powered medical wearables, USB-C portable analyzers, and smart battery packs requiring stable component supply, long-term lifecycle assurance, and RoHS/halogen-free compliance.
Supply support for DMP1022UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
The DMP1022UFDF belongs to Diodes' Ultra-Small Signal and Power MOSFET product line, engineered specifically for space- and efficiency-critical battery protection and power-path control in portable and wearable electronics.
FAQ
What is the maximum safe operating junction temperature for DMP1022UFDF-13?
The absolute maximum junction temperature is +150°C per the datasheet. Continuous operation above +125°C requires derating of ID and PD; thermal design must maintain TJ ≤ 125°C under worst-case ambient and power dissipation to ensure 10-year reliability in consumer applications.
Can DMP1022UFDF-13 be used in automotive applications?
No - DMP1022UFDF-13 is not AEC-Q101 qualified. While its construction uses automotive-grade materials, it lacks PPAP documentation, extended temperature validation (-40°C to +125°C), and failure analysis reports required for automotive use. Diodes offers AEC-Q101 variants like DMP1022UFDFQ-13 for such applications.
How does the dual-source/drain pad configuration affect PCB layout?
Pins 3 (D) and 5 (D), plus Pins 2 (S) and 4 (S), are internally shorted but assigned separate thermal pads. Layout must connect both drain pads to the same high-current copper pour and both source pads to the gate-driver reference plane to minimize loop inductance and maximize heat spreading across the 2.0×2.0mm footprint.
Is the gate threshold voltage shift over temperature significant for precision control?
Yes - VGS(TH) shifts from -0.8V at -55°C to -0.35V at +150°C (Figure 7). For closed-loop gate drive, this ±0.225V variation requires either temperature-compensated biasing or margining in gate resistor selection to avoid unintended turn-off at high temperature or shoot-through at low temperature.
DMP1022UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 14.8mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48.3 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2712 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 730mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMP1022UFDF-13 FAQ
1.How can I place an order for DMP1022UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP1022UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP1022UFDF-13 reliable?
The price and inventory of DMP1022UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP1022UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMP1022UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP1022UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP1022UFDF-13?
DMP1022UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP1022UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP1022UFDF-13?
For technical support, including DMP1022UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP1022UFDF-13 requirements.
6.How does Aetrix verify that DMP1022UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMP1022UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP1022UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMP1022UFDF-13?
All DMP1022UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP1022UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP1022UFDF-13 part is unused and in its original packaging.
Return procedure for DMP1022UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMP1022UFDF-13 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

