Diodes Incorporated DMP1045UCB4-7

Overview

DMP1045UCB4 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in an ultra-small 0.8 mm × 0.8 mm X2-WLB0808-4 (Type C) package, rated for -12 V V_DSS, 50 mΩ R_DS(ON) @ V_GS = -4.5 V, and -4.8 A continuous drain current at T_A = +25°C. It serves as a compact, high-efficiency load switch in space-constrained portable power rails.

For engineers reviewing the DMP1045UCB4 datasheet, DMP1045UCB4 pinout, DMP1045UCB4 application, or DMP1045UCB4 equivalent, this device is selected for low-voltage battery-powered load switching where minimal board area, low on-resistance at logic-level gate drive, and integrated ESD protection are critical design requirements.

Technical Context

This MOSFET operates in enhancement mode with a negative gate threshold voltage (-0.3 to -1.0 V), enabling turn-on with standard 3.3 V or 2.5 V logic-compatible gate drive. Its ultra-thin wafer-level chip-scale package (WLCSP) supports high thermal resistance (R_θJA = 71 °C/W on FR-4 with recommended pad layout) and delivers fast switching via low gate charge (Q_g = 6.1 nC).

The device integrates a body diode with V_SD = -0.7 to -1.2 V at I_S = -1.5 A and exhibits stable R_DS(ON) over temperature (±20% variation from -55°C to +150°C at V_GS = -4.5 V), supporting reliable operation in thermally variable portable environments.

Key Specifications

Pinout & Package

Package: X2-WLB0808-4 (Type C), ultra-thin wafer-level chip-scale package with 0.4 mm pitch, SnAgCu terminations, and moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMN10H450LPS-13 and AO3401, DMP1045UCB4 offers the smallest form factor and lowest R_DS(ON) among logic-level P-channel MOSFETs in its class, making it optimal for miniaturized, battery-critical systems where gate drive voltage headroom and ESD robustness are non-negotiable.

Availability

DMP1045UCB4 is available at Aetrix Electronics and suitable for smartphone power sequencing, wireless earbud battery protection, and portable medical sensor hubs requiring stable component supply, consistent wafer-lot traceability, and long-term lifecycle support.

Supply support for DMP1045UCB4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for consumer, industrial, and automotive markets.

The DMP1045UCB4 belongs to Diodes' advanced logic-level P-channel MOSFET product line, engineered specifically for ultra-compact, low-voltage load switching in battery-powered portable electronics where size, efficiency, and robustness are co-primary constraints.

FAQ

What is the maximum allowable gate-source voltage for DMP1045UCB4?

The absolute maximum V_GS rating is ±8 V. Exceeding this risks permanent gate oxide damage. In practice, gate drive should be limited to -4.5 V for optimal R_DS(ON) and -2.5 V for brown-out operation, both well within safe margin. The built-in G-S protection diode clamps transient overshoot but does not replace proper gate driver design.

Can DMP1045UCB4 be used in high-side switch configurations?

Yes - as a P-channel MOSFET, DMP1045UCB4 is inherently suited for high-side switching. Its source connects to the positive rail, drain to the load, and gate driven negative relative to source. With V_GS(TH) as low as -0.3 V, it fully enhances even with modest gate drive swing, enabling simple GPIO-controlled rail isolation without level-shifting circuitry.

Does DMP1045UCB4 require external ESD protection?

No - the device integrates a gate-source ESD protection diode rated to >2 kV HBM (per JESD22-A114). This eliminates the need for external TVS diodes in most portable applications meeting IEC 61000-4-2 Level 2. For Level 3/4 systems, supplemental board-level protection may still be advised depending on system-level testing requirements.

How does thermal performance compare between the X2-WLB0808-4 package and traditional SOT-23?

The X2-WLB0808-4 achieves R_θJA = 71 °C/W on FR-4 with minimum recommended pads - ~3× better than typical SOT-23 (≈200–250 °C/W). This results from direct silicon-to-PCB thermal path and four solderable terminals. However, its 0.4 mm pitch demands precise stencil design and reflow profiling to ensure void-free solder joints and mechanical reliability.