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Diodes Incorporated DMP1046UFDB-7

Part No.:
DMP1046UFDB-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMP1046UFDB-7.pdf
Description:
MOSFET 2P-CH 12V 3.8A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:16,256

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Product details

Overview

DMP1046UFDB from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, designed for high-efficiency load switching and power management. It features -12V VDSS, 61mΩ RDS(ON) at VGS = -4.5V, -3.8A continuous drain current at +25°C, low input capacitance (915pF), and 0.6mm max height - enabling compact, thermally efficient designs in portable power adaptors and battery-powered systems.

For engineers reviewing the DMP1046UFDB datasheet, DMP1046UFDB pinout, DMP1046UFDB application, or DMP1046UFDB equivalent, key selection criteria include its dual-channel P-channel topology, gate threshold range (-0.4V to -1.0V), thermal resistance (RθJA = 92°C/W), body diode forward voltage (-0.65V typ), and compatibility with low-voltage logic-level control in space-constrained DC-DC and load-switching circuits.

Technical Context

This dual MOSFET integrates two independent P-channel devices in a single ultra-thin U-DFN2020-6 (Type B) package with exposed drain pads for thermal performance. Each channel operates with VGS(TH) between -0.4V and -1.0V, enabling reliable turn-on from 1.8V–4.5V logic rails, and supports avalanche energy of 8mJ (L = 0.1mH).

Its dynamic characteristics include 10.7nC total gate charge at VGS = -4.5V, 5.7ns turn-on delay, and 27.8ns turn-off delay - optimized for fast, low-loss switching in synchronous buck converters and OR-ing applications where reverse-current blocking and low conduction loss are critical.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -12V - Maximum drain-source blocking voltage; defines safe operating range in 12V rail and battery-input systems.
RDS(ON) 61mΩ @ VGS = -4.5V - Low conduction loss at standard logic-level drive; enables <150mW I²R loss at 3.6A.
ID (max) -3.8A @ TA = +25°C - Continuous current rating under standard PCB layout; derates to -3.0A at +70°C ambient.
Ciss 915pF - Input capacitance determines gate drive strength requirement; compatible with low-power microcontroller GPIOs.
Qg 10.7nC @ VGS = -4.5V - Total gate charge impacts switching speed and driver power; enables ~1MHz operation with modest gate drivers.
RθJA 92°C/W - Junction-to-ambient thermal resistance on 1"×1" 2oz FR-4; sets maximum power dissipation limit at given ambient temperature.
VGS(TH) -0.4V to -1.0V - Gate threshold ensures robust turn-on with 1.8V logic while avoiding spurious conduction near 0V.

Pinout & Package

Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm, lead-free, halogen-free, RoHS-compliant, with exposed drain pads (D1/D2) for thermal and electrical performance.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (D1) Drain 1 Main current path for Channel 1; electrically and thermally connected to exposed pad for low-inductance, high-current routing.
Pin 2 (S1) Source 1 Reference node for Channel 1; tied to system ground or intermediate rail in high-side switch configurations.
Pin 3 (G1) Gate 1 Control input for Channel 1; requires stable negative bias relative to S1 to achieve full enhancement-mode conduction.
Pin 4 (G2) Gate 2 Independent control input for Channel 2; enables dual independent switching or parallel operation with matched timing.
Pin 5 (S2) Source 2 Reference node for Channel 2; may be tied to same or separate potential as S1 depending on circuit topology.
Pin 6 (D2) Drain 2 Main current path for Channel 2; symmetric layout with D1 supports balanced thermal distribution and layout symmetry.

Key Features

Feature Design Value
Low RDS(ON) at low VGS 81mΩ @ VGS = -2.5V - Enables use with 2.5V logic or battery voltages down to 2.8V without external level shifting.
Ultra-low profile 0.6mm max height - Allows placement under connectors or beneath shields in slim portable electronics and wearables.
Low input capacitance 915pF Ciss - Reduces gate drive power and EMI generation during switching; improves efficiency in high-frequency SMPS.
Thermally enhanced package Exposed D1/D2 pads - Provides direct thermal path to PCB copper; lowers junction temperature rise by ~35°C vs. non-exposed equivalents.
Green, RoHS-compliant construction <900ppm Br/Cl, <1000ppm Sb - Meets global environmental regulations and eliminates halogen-related corrosion risks in humid environments.

Applications

Portable Power Adaptor USB-C Power Delivery Load Switch

Use Scenario: Dual-rail output switching in compact wall adapters supporting 5V/9V/15V USB-PD profiles with automatic voltage selection.

IC Role / Device Role / Timing Role: Dual P-channel MOSFET used as back-to-back load switches to isolate output rails and prevent reverse current during voltage transitions.

Use Value: 61mΩ RDS(ON) minimizes dropout and heat generation at 3A loads; 0.6mm height allows integration into sub-20mm-thick adapter housings.

Use Scenario: Bidirectional power path control in USB-C receptacles where VBUS must be isolated from source/sink during plug insertion or fault conditions.

IC Role / Device Role / Timing Role: Dual-channel P-MOSFET configured as active OR-ing device to enable seamless source/sink handover without voltage glitches.

Use Value: Matched VGS(TH) and RDS(ON) ensure symmetrical turn-on behavior; low Qg enables fast response (<50ns) to CC-line state changes.

Smartphone Battery Protection Industrial IoT Sensor Node Power Management

Use Scenario: Secondary overcurrent and short-circuit protection in smartphone battery packs, placed between cell and system PMIC to limit fault current propagation.

IC Role / Device Role / Timing Role: High-side load switch controlling main battery discharge path; activated only when system is awake and battery voltage is valid.

Use Value: -12V VDSS provides margin above 4.45V Li-ion max; 8mJ avalanche rating absorbs transient energy from hot-plug events.

Use Scenario: Power gating of wireless transceivers (BLE/Zigbee) and sensors in battery-operated edge nodes to extend multi-year runtime.

IC Role / Device Role / Timing Role: Dual independent switches managing separate power domains: one for MCU/peripherals, another for RF subsystem.

Use Value: 100nA max IGSS ensures <1µA standby leakage per channel; 0.6mm profile fits within 4mm × 4mm module footprints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2038UVT-7 Single-channel P-MOSFET, same U-DFN2020-6 package, but only one device; RDS(ON) = 58mΩ @ -4.5V. Requires two devices for dual functionality; higher board area and layout complexity than integrated dual solution. Select when channel isolation or independent thermal management is required, or when only one switch is needed per design iteration.
Si7157DP-T1-GE3 Dual P-channel in SO-8 package; RDS(ON) = 65mΩ @ -4.5V; RθJA = 62°C/W; 1.75mm height. Larger footprint and height limit use in ultra-thin devices; better thermal performance on large copper areas due to SO-8 pad layout. Select for industrial applications requiring higher reliability margin, easier rework, or legacy SO-8 footprint compatibility.

Compared with DMC2038UVT-7 and Si7157DP-T1-GE3, DMP1046UFDB delivers dual-channel integration in the smallest possible footprint (2.0mm × 2.0mm), lowest profile (0.6mm), and best balance of low RDS(ON) and gate charge for space-constrained portable power systems.

Availability

DMP1046UFDB is available at Aetrix Electronics and suitable for portable power adaptors, USB-C load switching, and battery protection circuits requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for DMP1046UFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMP1046UFDB belongs to Diodes' high-efficiency power MOSFET product line, engineered specifically for low-voltage, high-density load switching and power management in battery-powered and portable electronics.

FAQ

What is the maximum allowable gate-source voltage for DMP1046UFDB?

The absolute maximum VGS is ±8V per the datasheet's Maximum Ratings table. Exceeding this can cause irreversible gate oxide damage. For reliable operation, keep VGS between -4.5V and -8V for full enhancement, and avoid floating gate conditions - always tie G1/G2 to defined potentials via pull-down resistors when inactive.

Can DMP1046UFDB be used in linear (analog) regulation mode?

No - it is not characterized or rated for linear-mode operation. Its Safe Operating Area (SOA) curve shows limited DC capability (≤0.1A at VDS > 6V), and RDS(ON) variation with temperature is not specified for analog biasing. Use only in saturated switching applications with proper gate drive and thermal derating.

How is thermal performance affected by PCB layout?

Thermal resistance drops significantly with increased copper area under the exposed D1/D2 pads: RθJA is 92°C/W on 1"×1" 2oz FR-4, but improves to ~55°C/W with 2"×2" thermal pads and multiple vias to inner ground planes. Avoid solder mask over thermal pads and use ≥6 thermal vias per drain pad for optimal performance.

Does DMP1046UFDB have built-in ESD protection?

Yes - it meets HBM ESD rating of ±2kV (per JESD22-A114), verified per the datasheet's "Electrostatic Discharge" section. However, no dedicated ESD diodes are integrated; protection relies on inherent MOSFET gate structure. External TVS or RC filters are still recommended for high-noise environments like USB-C ports or motor-driven systems.

DMP1046UFDB-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
12V
Current - Continuous Drain (Id) @ 25°C:
3.8A
Rds On (Max) @ Id, Vgs:
61mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17.9nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:
915pF @ 6V
Power - Max:
1.4W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type B)

DMP1046UFDB-7 FAQ

1.How can I place an order for DMP1046UFDB-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP1046UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP1046UFDB-7 reliable?

The price and inventory of DMP1046UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP1046UFDB-7 is usually 5 days.

3.What payment methods are accepted for DMP1046UFDB-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP1046UFDB-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP1046UFDB-7?

DMP1046UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP1046UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP1046UFDB-7?

For technical support, including DMP1046UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP1046UFDB-7 requirements.

6.How does Aetrix verify that DMP1046UFDB-7 is sourced from the original manufacturer or authorized distributors?

All DMP1046UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP1046UFDB-7 meets industry standards.

7.What is the process for return or replacement of DMP1046UFDB-7?

All DMP1046UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP1046UFDB-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP1046UFDB-7 part is unused and in its original packaging.

Return procedure for DMP1046UFDB-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP1046UFDB-7 Tags

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