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Diodes Incorporated DMP1055UFDB-7
- Part No.:
- DMP1055UFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP1055UFDB-7.pdf
- Description:
- MOSFET 2P-CH 12V 3.9A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,900
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Product details
Overview
DMP1055UFDB-7 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for -12V VDSS, 59 mΩ RDS(ON) @ VGS = -4.5V, and -3.9A continuous drain current at +25°C - optimized for compact, high-efficiency load switching in portable power adaptors and battery-powered systems.
For engineers reviewing the DMP1055UFDB-7 datasheet, DMP1055UFDB-7 pinout, DMP1055UFDB-7 application, or DMP1055UFDB-7 equivalent, key selection criteria include its low-profile 0.6 mm height, ESD-protected gate, dual-channel symmetry, and validated performance down to -55°C ambient - critical for space-constrained DC-DC and USB-C power path designs.
Technical Context
This dual P-MOSFET integrates two matched, independently controllable channels with gate threshold voltage (VGS(TH)) between -0.4 V and -1.0 V, enabling reliable turn-on from low-voltage logic (e.g., 1.8 V or 2.5 V GPIO). Each channel features integrated gate protection diodes and shares a common source configuration per internal schematic.
Its U-DFN2020-6 (Type B) package delivers 92 °C/W steady-state thermal resistance (RθJA) on FR-4 with 2 oz copper, while dynamic parameters - including 13 nC total gate charge (Qg) at VGS = -4.5 V and 31.6 ns body diode reverse recovery time - support efficient synchronous rectification and fast load-switch transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -12 V - supports input rails up to 12 V in single-supply P-channel load switches without level-shifting. |
| RDS(ON) | 59 mΩ @ VGS = -4.5 V - enables ≤230 mW conduction loss at 3.9 A, critical for thermal budget in sealed enclosures. |
| ID (max) | -3.9 A @ TA = +25°C - sustains peak load currents in USB PD sink paths and battery protection circuits. |
| Ciss | 1028 pF - balances switching speed and EMI control; compatible with standard 1 Ω gate drivers. |
| Qg | 13 nC @ VGS = -4.5 V - allows <1 μs turn-on with 13 mA average gate drive, reducing driver IC overhead. |
| TJ range | -55°C to +150°C - qualified for extended industrial and automotive under-hood environments per JEDEC reliability standards. |
Pinout & Package
U-DFN2020-6 (Type B) package: 2.0 mm × 2.0 mm footprint, 0.6 mm max height, NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain of Q1 | Main current path for first P-MOSFET; connects to input rail in high-side switch topology. |
| Pin 2 (S1) | Source of Q1 | Common source node for Q1; tied to output or load in typical load-switch configuration. |
| Pin 3 (G1) | Gate of Q1 | Control terminal for Q1; requires negative bias relative to S1 to turn on. |
| Pin 4 (G2) | Gate of Q2 | Independent control terminal for second P-MOSFET; enables dual-rail or redundancy switching. |
| Pin 5 (S2) | Source of Q2 | Common source node for Q2; electrically isolated from S1 unless externally connected. |
| Pin 6 (D2) | Drain of Q2 | Main current path for second P-MOSFET; supports independent load or mirrored power path. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 81 mΩ @ VGS = -2.5 V - ensures robust operation with 2.5 V logic controllers without gate boosting. |
| ESD-protected gate | ±10 μA IGSS max at ±8 V - prevents latch-up or damage during board handling and hot-plug events. |
| Low-profile packaging | 0.6 mm max height - fits beneath 1 mm connectors and enables ultra-thin portable device stacking. |
| Body diode performance | VSD = -0.7 V typ @ IS = -3.7 A - minimizes forward drop in reverse-current paths (e.g., back-powering prevention). |
| Green compliance | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); RoHS 3 compliant - meets global environmental mandates without derating. |
Applications
| USB-C Power Delivery Sink | Battery Protection Circuit |
|---|---|
|
Use Scenario: Controls power delivery from USB-C port to system bus while enforcing overvoltage and reverse-current blocking. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET acts as bidirectional load switch and reverse-polarity guard; Q1 handles main VBUS path, Q2 isolates backup rail or CC logic supply. Use Value: 59 mΩ RDS(ON) limits voltage drop to <230 mV at 3.9 A, preserving PD negotiation margin; ESD protection survives repeated plug insertion cycles. |
Use Scenario: Isolates Li-ion battery pack from system during charging fault, overtemperature, or short-circuit detection. IC Role / Device Role / Timing Role: Q1 serves as main discharge FET, Q2 as charge FET in traditional protection IC interface; both driven by dedicated protection ASIC outputs. Use Value: Matched channel characteristics ensure balanced current sharing; -55°C to +150°C rating supports operation across full battery temperature envelope. |
| Portable Power Adaptor Output Stage | Industrial IoT Sensor Node Power Sequencing |
|
Use Scenario: Regulates 5 V/9 V/12 V output from buck converter to downstream MCU, radio, and peripherals with independent enable control. IC Role / Device Role / Timing Role: Dual P-MOSFET provides independent power gating per subsystem; each channel controlled by separate PMIC enable signal. Use Value: 13 nC Qg enables sub-microsecond turn-on, supporting rapid wake/sleep sequencing; 0.6 mm height avoids interference with stacked RF modules. |
Use Scenario: Powers sensor cluster (accelerometer, humidity, BLE) only during active measurement windows to extend battery life beyond 5 years. IC Role / Device Role / Timing Role: Q1 gates main sensor rail, Q2 gates radio transceiver supply; both synchronized via microcontroller GPIO with precise timing alignment. Use Value: Low IDSS (<1 μA) prevents standby leakage accumulation; 1028 pF Ciss ensures clean edge integrity even with long PCB traces to remote sensors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Single-channel P-MOSFET, same U-DFN2020-6 package, -20 V VDSS, 42 mΩ @ -4.5 V, but no dual configuration. | Requires two devices for dual-path function; higher board area and routing complexity. | Select when higher voltage margin (>12 V) is required and dual integration is not mandatory. |
| SI3483DV-T1-GE3 | Dual P-MOSFET in SC-70-6, -20 V VDSS, 120 mΩ @ -4.5 V, 1.1 mm height - larger footprint and higher RDS(ON). | Less suitable for ultra-thin designs; higher conduction loss impacts thermal design in sealed housings. | Select when legacy SC-70 layout compatibility is prioritized over size and efficiency. |
Compared with DMC2038LVT-7 and SI3483DV-T1-GE3, DMP1055UFDB-7 uniquely delivers dual-channel integration, 0.6 mm height, and 59 mΩ RDS(ON) in a 2.0×2.0 mm footprint - optimizing board space, thermal performance, and bill-of-materials count for next-gen portable power systems.
Availability
DMP1055UFDB-7 is available at Aetrix Electronics and suitable for USB-C power delivery sinks, battery protection circuits, and portable power adaptor output stages requiring stable component supply, JEDEC-qualified reliability, and green-compliant manufacturing.
Supply support for DMP1055UFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
DMP1055UFDB-7 belongs to Diodes' high-efficiency power MOSFET product line, engineered specifically for space-constrained, thermally sensitive load-switch and power-management applications in portable and industrial electronics.
FAQ
What is the maximum continuous drain current for each channel at +70°C ambient?
Each channel supports -3.1 A continuous drain current at TA = +70°C with VGS = -4.5 V, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating on a standard FR-4 board with 2 oz copper and 1-inch² copper pour, ensuring safe operation without forced airflow.
Can DMP1055UFDB-7 be used in a common-source dual configuration with shared gate drive?
No - the device has independent gate terminals (G1 and G2), and its internal schematic shows no internal gate connection. Driving both gates with the same signal is permissible only if identical switching behavior is acceptable; however, mismatched parasitics may cause slight timing skew, so individual gate resistors are recommended for critical synchronization.
Is the body diode suitable for reverse-current blocking in battery-backup applications?
Yes - the body diode exhibits VSD = -0.7 V typical at -3.7 A, with tRR = 31.6 ns and QRR = 7.8 nC. These values confirm suitability for reverse-current blocking in battery switchover circuits where fast recovery and low forward drop reduce power loss and heat generation during transition events.
Does DMP1055UFDB-7 require external gate resistors for ESD protection?
No - the device integrates ESD protection diodes on both gates (per datasheet "ESD Protected Gate" feature and internal schematic), rated to withstand human-body-model (HBM) >2 kV. External gate resistors are still recommended for switching control (e.g., 1–10 Ω) to dampen ringing and manage dV/dt, but not for ESD mitigation.
DMP1055UFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 3.9A
- Rds On (Max) @ Id, Vgs:
- 59mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20.8nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1028pF @ 6V
- Power - Max:
- 1.36W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMP1055UFDB-7 FAQ
1.How can I place an order for DMP1055UFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP1055UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP1055UFDB-7 reliable?
The price and inventory of DMP1055UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP1055UFDB-7 is usually 5 days.
3.What payment methods are accepted for DMP1055UFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP1055UFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP1055UFDB-7?
DMP1055UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP1055UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP1055UFDB-7?
For technical support, including DMP1055UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP1055UFDB-7 requirements.
6.How does Aetrix verify that DMP1055UFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMP1055UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP1055UFDB-7 meets industry standards.
7.What is the process for return or replacement of DMP1055UFDB-7?
All DMP1055UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP1055UFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP1055UFDB-7 part is unused and in its original packaging.
Return procedure for DMP1055UFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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