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Diodes Incorporated DMP1055USW-13
- Part No.:
- DMP1055USW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMP1055USW-13.pdf
- Description:
- MOSFET P-CH 12V 3.8A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:8,915
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Product details
Overview
DMP1055USW-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SOT363 package, rated for -12V VDS, 48 mΩ RDS(ON) at VGS = -4.5V, and -3.8A continuous drain current at TA = +25°C. It integrates gate protection diode and ESD protection, and is optimized for low-voltage DC-DC converter switching and battery-side load control.
For engineers reviewing the DMP1055USW-13 datasheet, DMP1055USW-13 pinout, DMP1055USW-13 application, or DMP1055USW-13 equivalent, key selection criteria include gate threshold voltage (-0.4 to -1.0 V), low RDS(ON) at 1.8–4.5 V drive, body diode forward voltage (≤ -1.2 V), thermal resistance (123 °C/W on 2 oz copper), and SOT363 footprint compatibility with space-constrained portable designs.
Technical Context
This MOSFET uses trench-gate silicon process to achieve low RDS(ON) while maintaining fast switching (tF = 25.4 ns, tD(OFF) = 30.7 ns) and low input capacitance (Ciss = 1028 pF). Its negative VGS(TH) enables direct logic-level drive from 1.8–3.3 V controllers without level shifting.
The integrated body diode supports synchronous rectification and reverse-current blocking in buck converters and battery protection circuits. Thermal design is enabled by RθJC = 39 °C/W and validated junction-to-ambient performance under defined PCB layouts (123–192 °C/W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum drain-source blocking voltage for 12 V rail and battery-input systems |
| RDS(ON) | 48 mΩ @ VGS = -4.5V - Enables ≤170 mW conduction loss at 3.8 A, critical for efficiency in portable power stages |
| ID (max) | -3.8 A @ TA = +25°C - Continuous current rating suitable for medium-power load switches and DC-DC high-side switches |
| VGS(TH) | -0.4 to -1.0 V - Ensures turn-on with standard 1.8 V/3.3 V GPIOs; low threshold improves system responsiveness |
| Ciss | 1028 pF @ VDS = -6 V - Low input capacitance reduces gate drive power and speeds up switching transitions |
| tF | 25.4 ns - Fast fall time minimizes switching losses during high-frequency PWM operation (≥500 kHz) |
| Qg | 13 nC @ VGS = -4.5 V - Low total gate charge eases drive requirements for microcontroller-based gate control |
Pinout & Package
Package: SOT363 - 6-pin ultra-small surface-mount package (2.15 × 2.10 × 1.00 mm), moisture sensitivity level 1, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Main current path from source to load; internally connected to pins 2 and 3 for parallel conduction |
| 2 (D) | Drain | Redundant drain terminal for improved thermal and current handling in compact layout |
| 3 (G) | Gate | Control terminal; low threshold allows direct interface with 1.8 V logic; protected by internal diode |
| 4 (S) | Source | Reference node for gate drive; tied to ground or battery negative in high-side switch configurations |
| 5 (D) | Drain | Third drain connection; shares same internal node as pins 1 and 2 for enhanced current distribution |
| 6 (D) | Drain | Fourth drain terminal; provides lowest-inductance path for high-frequency switching currents |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 59 mΩ @ VGS = -2.5 V - Enables efficient operation directly from 2.5 V supply rails without boost circuitry |
| ESD protection | HBM ≥ 2 kV - Eliminates need for external ESD clamps in handheld and wearable device interfaces |
| Small footprint | SOT363 (2.15 × 2.10 mm) - Saves >40% board area vs. SO-8 or TSOP-6 in space-critical battery management modules |
| Body diode performance | VSD ≤ -1.2 V @ IS = -3.7 A - Supports bidirectional current flow in solid-state relay and reverse-polarity protection applications |
| Thermal robustness | RθJA = 123 °C/W on 2 oz copper - Allows sustained 2.5 A operation at ambient up to 70°C without heatsink |
Applications
| Battery Protection Circuit | USB Power Switch |
|---|---|
|
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path; operates in static on/off mode with fast fault response. Use Value: 48 mΩ RDS(ON) limits voltage drop to <60 mV at 1.25 A, preserving battery runtime; ESD protection ensures reliability during hot-plug events. |
Use Scenario: USB 2.0/3.0 port power enable/disable with inrush current limiting. IC Role / Device Role / Timing Role: Load switch isolating VBUS from downstream peripherals; driven by USB controller GPIO. Use Value: -1.0 V VGS(TH) guarantees full enhancement with 3.3 V logic; 25.4 ns tF prevents glitch-induced bus faults during hot-swap. |
| DC-DC Synchronous Rectifier | LED Backlight Dimming Driver |
|
Use Scenario: Low-side synchronous rectification in 5 V → 3.3 V buck converters for IoT sensor nodes. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; switched at 1 MHz with complementary PWM signal. Use Value: 13 nC Qg enables clean 1 MHz switching with minimal gate driver loss; Coss = 285 pF reduces ringing and EMI in high-dV/dt environments. |
Use Scenario: PWM-controlled current sink for white LED strings in portable displays. IC Role / Device Role / Timing Role: Constant-current switch modulating LED brightness via 200–1000 Hz PWM duty cycle. Use Value: 41 mΩ typical RDS(ON) ensures <100 mW dissipation at 150 mA per channel; SOT363 allows dense multi-LED array routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H400L-7 | RDS(ON) = 40 mΩ @ VGS = -4.5 V; SOT23-6 package; higher ID = -4.5 A | Larger footprint (2.9 × 2.8 mm); higher thermal resistance (RθJA = 170 °C/W) | Preferred when higher current headroom is needed and board space permits larger package |
| SI2301DS-T1-BE3 | RDS(ON) = 115 mΩ @ VGS = -2.5 V; SOT23-3 package; no ESD protection | Single-drain configuration; lacks redundant drain terminals and gate protection diode | Lower-cost option where ESD immunity and parallel drain paths are not required |
Compared with DMN10H400L-7 and SI2301DS-T1-BE3, DMP1055USW-13 uniquely balances ultra-low RDS(ON) at logic-level drive, four-drain paralleling for thermal and inductance reduction, and built-in ESD protection-making it optimal for miniaturized, high-reliability battery-switching applications.
Availability
DMP1055USW-13 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, and DC-DC synchronous rectifiers requiring stable component supply across consumer electronics, wearables, and industrial portable equipment.
Supply support for DMP1055USW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, computing, and industrial markets.
The DMP1055USW belongs to Diodes' logic-level P-channel MOSFET product line, engineered specifically for space-constrained, low-voltage load switching and battery-side power control where gate drive simplicity and thermal efficiency are critical.
FAQ
What is the maximum safe operating temperature for DMP1055USW-13?
The device has an operating junction temperature range of -55°C to +150°C. Under continuous DC operation with 2 oz copper pad layout, it sustains 2.5 A at 70°C ambient before reaching 150°C junction limit. Derating curves in Figure 5 and Figure 7 confirm RDS(ON) remains below 60 mΩ up to 125°C junction temperature.
Can DMP1055USW-13 be used in high-side switch configurations?
Yes - its P-channel architecture and -12 V VDS rating make it suitable for high-side switching in 5 V and 3.3 V systems. With VGS(TH) as low as -0.4 V, it fully enhances when gate is pulled to ground while source connects to positive rail, enabling simple GPIO-controlled power gating without level shifters.
Does DMP1055USW-13 require external gate resistors for ESD or switching stability?
No external gate resistor is required for ESD protection, as the part integrates gate protection diode and meets HBM ≥ 2 kV. For switching stability, a 10 Ω series gate resistor is recommended to dampen ringing caused by low Ciss/Coss ratio and PCB trace inductance - verified in application note AP02011.
How does the SOT363 package affect thermal performance compared to SOT23-6?
SOT363's smaller footprint (2.15 × 2.10 mm vs. 2.9 × 2.8 mm) reduces copper area but achieves lower RθJA = 123 °C/W (vs. ~170 °C/W for typical SOT23-6) due to four parallel drain terminals enhancing heat spreading into the PCB. This makes it thermally superior per unit area in densely routed boards.
DMP1055USW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1028 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 660mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMP1055USW-13 FAQ
1.How can I place an order for DMP1055USW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP1055USW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP1055USW-13 reliable?
The price and inventory of DMP1055USW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP1055USW-13 is usually 5 days.
3.What payment methods are accepted for DMP1055USW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP1055USW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP1055USW-13?
DMP1055USW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP1055USW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP1055USW-13?
For technical support, including DMP1055USW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP1055USW-13 requirements.
6.How does Aetrix verify that DMP1055USW-13 is sourced from the original manufacturer or authorized distributors?
All DMP1055USW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP1055USW-13 meets industry standards.
7.What is the process for return or replacement of DMP1055USW-13?
All DMP1055USW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP1055USW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP1055USW-13 part is unused and in its original packaging.
Return procedure for DMP1055USW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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