Diodes Incorporated DMP10H088SPS-13

Overview

DMP10H088SPS from Diodes Incorporated is a 100V P-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for -20A continuous drain current at TC = +25°C, with R_DS(ON) = 83 mΩ @ V_GS = -10V and 89 mΩ @ V_GS = -6V. It serves as a high-efficiency active clamp or load switch in DC-DC converters and industrial power supplies.

For engineers reviewing the DMP10H088SPS datasheet, DMP10H088SPS pinout, DMP10H088SPS application, or DMP10H088SPS equivalent, key selection criteria include its -100V V_DSS, wettable flank package for automated optical inspection, 100% production-tested UIS capability, and low Q_g (27.7 nC @ V_GS = -10V) enabling fast switching in high-frequency power stages.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining robust avalanche ruggedness (E_AS = 52 mJ, I_AS = -32 A). Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard logic-level negative gate drive.

The device features low dynamic parameters: C_iss = 1808 pF, C_oss = 95 pF, and Cr_ss = 47 pF at V_DS = -50V, supporting efficient hard-switching operation. Its R_θJC = 1.8 °C/W enables high-power dissipation when mounted on an exposed drain pad.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flanks for solder joint inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage load switch applications.

Compared with DMTH10H088LPS-13 and IPB180P04P4L-02, DMP10H088SPS uniquely combines 100V rating, wettable flanks, and 1.8 °C/W R_θJC in a compact 8-pin PowerDI package-making it optimal for space-constrained, high-reliability industrial power switches where thermal management and automated assembly verification are critical.

Availability

DMP10H088SPS is available at Aetrix Electronics and suitable for active clamp flyback converters, industrial load switches, hot-swap controllers, and synchronous rectifiers requiring stable component supply and long-term manufacturability.

Supply support for DMP10H088SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion and protection in industrial, computing, and telecom infrastructure applications.

FAQ

What is the maximum safe operating junction temperature for DMP10H088SPS?

The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation above this limit risks permanent parametric shift or catastrophic failure. Derating is required above +125°C ambient, especially under high-duty-cycle conditions, due to R_DS(ON) increase with temperature shown in Figure 6 and Figure 7.

Does DMP10H088SPS require a negative gate driver?

Yes - as a P-channel MOSFET, it requires a gate voltage more negative than the source to turn on. For full enhancement at -20A, V_GS must reach -10V. Gate drivers must sink current and provide sufficient negative swing relative to the source node, particularly in high-side configurations where source potential floats.

Can DMP10H088SPS be used in automotive applications?

This part is not AEC-Q101 qualified per Diodes' documentation. While it meets RoHS and green material requirements, automotive use requires formal qualification, PPAP submission, and IATF 16949-manufactured lots - which Diodes explicitly states must be requested separately and are not covered by the standard DMP10H088SPS-13 ordering code.

How does the PowerDI5060-8/SWP package improve thermal performance over SO-8?

The PowerDI5060-8/SWP exposes the entire drain die attach pad as a bottom-side thermal interface, achieving R_θJC = 1.8 °C/W - over 5× better than typical SO-8 packages (~10–12 °C/W). This allows direct thermal coupling to PCB copper planes, significantly increasing sustainable power dissipation without heatsinks in space-constrained designs.