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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP10H4D2S-13

Name: DMP10H4D2S-13
Brand: Diodes Incorporated
SKU: DMP10H4D2S-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP10H4D2S-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMP10H4D2S-13.pdf

Description:: MOSFET P-CH 100V 270MA SOT23-3

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Product details

Overview

DMP10H4D2S-13 from Diodes Incorporated is a 100V P-channel enhancement-mode MOSFET in SOT23 package, with R_DS(ON) = 4.2 Ω @ V_GS = −10 V, I_D = −0.27 A at T_A = +25°C, and ESD protection up to 2 kV (HBM). It serves as a low-power load switch or driver in battery-operated systems, DC-DC converters, and solid-state relay circuits.

For engineers reviewing the DMP10H4D2S-13 datasheet, DMP10H4D2S-13 pinout, DMP10H4D2S-13 application, or DMP10H4D2S-13 equivalent, key selection criteria include gate threshold voltage (−1.0 to −3.0 V), low input capacitance (87 pF), fast switching speed (t_D(ON) = 3.3 ns), and thermal resistance (R_θJA = 333 °C/W on FR-4).

Technical Context

This MOSFET uses a planar trench-gate structure optimized for low R_DS(ON) while maintaining controlled gate charge (Q_g = 1.8 nC) and fast turn-on/turn-off times. Its −100 V V_DSS rating supports high-side switching in 48 V and 60 V industrial bus rails.

The device integrates an intrinsic body diode with V_SD = −0.82 V @ I_S = −0.2 A and reverse recovery time t_RR = 17.8 ns, enabling efficient synchronous rectification and flyback energy handling in compact DC-DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−100 V: Supports high-voltage rail switching without avalanche stress in 48 V systems.
R_DS(ON)	4.2 Ω @ V_GS = −10 V: Enables ≤270 mW conduction loss at 0.27 A, suitable for low-duty-cycle loads.
V_GS(TH)	−1.0 to −3.0 V: Ensures reliable turn-on with standard logic-level microcontroller outputs (e.g., 3.3 V GPIO).
C_iss	87 pF: Limits gate drive power requirement and enables <10 ns switching transitions with 10 Ω source impedance.
t_D(ON)	3.3 ns: Reduces switching transition time, minimizing overlap losses in PWM-driven loads.
P_D	0.38 W (FR-4, min pad): Defines maximum continuous power dissipation in space-constrained PCB layouts.
T_J Range	−55 to +150 °C: Qualified per AEC-Q standards for extended temperature operation in automotive and industrial environments.

Pinout & Package

Package: SOT23 (Standard), 3-pin surface-mount plastic package with matte tin finish terminals, JEDEC-compliant footprint, and moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel channel	Connected to higher potential rail; provides reference for gate control and body diode cathode.
2 (Gate)	Control electrode for channel conduction	Accepts negative V_GS bias; low C_iss and Q_g enable fast, low-energy switching.
3 (Drain)	Current output terminal	Connects to load; withstands −100 V blocking; integrated body diode anode.

Key Features

Feature	Design Value
Low gate threshold voltage	V_GS(TH) down to −1.0 V ensures full enhancement with 3.3 V logic drivers without level-shifting.
ESD protection	2 kV HBM rating eliminates need for external transient suppression in handheld and portable designs.
Small SOT23 footprint	2.9 mm × 2.4 mm × 1.15 mm outline enables dense placement in wearables and IoT sensor nodes.
Lead-free & green compliance	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets global environmental mandates.

Applications

Battery-Powered Load Switching

Low-Voltage DC-DC Converter Control

Use Scenario: Power gating of BLE modules, sensors, or display segments in coin-cell–powered wearables.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling V_DD delivery; operates in static on/off mode with <1 µA I_DSS leakage.

Use Value: Extends battery life by eliminating quiescent current paths; R_DS(ON) < 4.2 Ω limits dropout to <1.1 mV at 270 mA.

Use Scenario: Synchronous rectifier or high-side switch in buck converter stages for 3.3 V/5 V point-of-load regulation.

IC Role / Device Role / Timing Role: Fast-turning P-MOSFET replacing Schottky diode; driven by gate driver with 10 Ω series resistance.

Use Value: Reduces conduction loss vs. diode solution; t_D(ON)/t_F < 10 ns minimizes dead-time penalty and improves efficiency at 500 kHz switching.

Solid-State Relay Replacement

Peripheral Driver Interface

Use Scenario: Replacing electromechanical relays in programmable logic controllers for 24 V DC output modules.

IC Role / Device Role / Timing Role: Low-current, high-voltage switch driving indicator LEDs, solenoids, or small actuators.

Use Value: Eliminates contact bounce and wear; −100 V V_DSS accommodates inductive kickback without snubbers.

Use Scenario: Driving LED segments, memory write-enable lines, or small-signal transistors in microcontroller-based instrumentation.

IC Role / Device Role / Timing Role: General-purpose digital output buffer with integrated protection and low drive strength requirement.

Use Value: Simplifies BOM by integrating ESD hardening and low-threshold drive; avoids discrete gate resistors and TVS diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2011UFD-7	R_DS(ON) = 2.1 Ω @ V_GS = −4.5 V; higher I_D = −3.5 A; larger TSOP-6 package	Higher current capability suits 1 A loads but requires more board area and thermal margin	Select when >0.5 A continuous drain current or lower R_DS(ON) at moderate V_GS is required.
SI2301DDS-T1-BE3	R_DS(ON) = 120 mΩ @ V_GS = −4.5 V; V_DSS = −20 V; same SOT23 footprint	Limited to ≤24 V systems; unsuitable for 48 V bus or inductive kickback above −20 V	Choose only for low-voltage, high-current logic-level switching where V_DSS margin is not critical.

Compared with DMN2011UFD-7 and SI2301DDS-T1-BE3, DMP10H4D2S-13 uniquely balances −100 V blocking, SOT23 size, and logic-compatible gate drive-making it optimal for space-constrained, medium-voltage, low-current switching where thermal budget is tight and board area is premium.

Availability

DMP10H4D2S-13 is available at Aetrix Electronics and suitable for battery-powered load switching, low-voltage DC-DC converter control, and solid-state relay replacement requiring stable component supply and long-term lifecycle support.

Supply support for DMP10H4D2S-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.

The DMP10H4D2S belongs to Diodes' high-voltage P-channel MOSFET product line, engineered for compact, low-power switching in space- and energy-constrained applications where robustness and qualification to AEC-Q standards are essential.

FAQ

What is the maximum continuous drain current for DMP10H4D2S-13 at 70°C ambient?

The maximum continuous drain current is −0.21 A at T_A = +70°C, derated from −0.27 A at +25°C due to thermal limitations of the SOT23 package and its R_θJA = 333 °C/W on standard FR-4. This reflects safe junction temperature operation under steady-state conduction without forced airflow or copper pour enhancements.

Does DMP10H4D2S-13 have an integrated body diode, and what is its forward voltage?

Yes, it includes an intrinsic body diode with typical forward voltage V_SD = −0.82 V at I_S = −0.2 A and T_J = +25°C. The diode is rated for continuous current up to −0.27 A and exhibits reverse recovery time t_RR = 17.8 ns, supporting use in freewheeling and synchronous rectification roles.

Can DMP10H4D2S-13 be driven directly from a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage range (−1.0 to −3.0 V) ensures full enhancement with a 3.3 V GPIO pulling the gate to ground (V_GS = −3.3 V), delivering R_DS(ON) ≤ 5.0 Ω. No level shifter is needed, though a series gate resistor (e.g., 10–100 Ω) is recommended to damp ringing and limit peak current during switching.

Is DMP10H4D2S-13 qualified for automotive applications?

The standard DMP10H4D2S-13 is not automotive-qualified, but its automotive-grade variant DMP10H4D2SQ is available separately and qualified to AEC-Q101 standards. The base part meets JEDEC reliability requirements and is widely used in industrial and consumer applications requiring extended temperature operation (−55 to +150 °C).

DMP10H4D2S-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 270mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 4.2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 87 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 380mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMP10H4D2S-13 FAQ

1.How can I place an order for DMP10H4D2S-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP10H4D2S-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP10H4D2S-13 reliable?

The price and inventory of DMP10H4D2S-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP10H4D2S-13 is usually 5 days.

3.What payment methods are accepted for DMP10H4D2S-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP10H4D2S-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP10H4D2S-13?

DMP10H4D2S-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP10H4D2S-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP10H4D2S-13?

For technical support, including DMP10H4D2S-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP10H4D2S-13 requirements.

6.How does Aetrix verify that DMP10H4D2S-13 is sourced from the original manufacturer or authorized distributors?

All DMP10H4D2S-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP10H4D2S-13 meets industry standards.

7.What is the process for return or replacement of DMP10H4D2S-13?

All DMP10H4D2S-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP10H4D2S-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP10H4D2S-13 part is unused and in its original packaging.

Return procedure for DMP10H4D2S-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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