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Diodes Incorporated DMP10H4D2SQ-13

Part No.:
DMP10H4D2SQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMP10H4D2SQ-13.pdf
Description:
MOSFET BVDSS: 61V~100V SOT23 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,157

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Product details

Overview

DMP10H4D2SQ-13 from Diodes Incorporated is a 100V P-channel enhancement-mode MOSFET in SOT23 package, rated for -0.27A continuous drain current at VGS = -10V, with RDS(ON) = 4.2Ω (typ. 2.8Ω), AEC-Q101 qualified, and designed for automotive power management functions including DC-DC converters and solid-state relays.

For engineers reviewing the DMP10H4D2SQ-13 datasheet, DMP10H4D2SQ-13 pinout, DMP10H4D2SQ-13 application, or DMP10H4D2SQ-13 equivalent, key selection criteria include gate threshold voltage (-1.0 to -3.0V), low input capacitance (87pF), fast switching (tD(ON) = 3.3ns), thermal resistance (RθJA = 282°C/W), and AEC-Q101 qualification for automotive reliability.

Technical Context

This P-channel MOSFET operates in enhancement mode with negative gate control logic, requiring VGS ≤ -1.0V to initiate conduction and fully enhancing at VGS = -10V. Its integrated ESD protection and low gate charge (Qg = 1.8nC) support robust, low-loss switching in space-constrained automotive modules.

The device features a body diode with VSD = -0.82V at -0.2A and reverse recovery time tRR = 17.8ns, enabling bidirectional current handling in relay driver and battery-isolation circuits without external freewheeling components.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS-100V - supports high-side switching in 48V automotive systems with margin against load-dump transients
RDS(ON)4.2Ω @ VGS = -10V - enables <100mW conduction loss at 0.25A, suitable for low-power control nodes
ID-0.27A @ TA = +25°C - defines maximum steady-state load current on standard FR-4 PCB with 1-inch² copper pad
VGS(TH)-1.0 to -3.0V - ensures reliable turn-on from 3.3V or 5V microcontroller GPIOs with negative logic interface
Ciss87pF - minimizes gate drive power and enables >1MHz switching in compact DC-DC feedback paths
tD(ON)3.3ns - reduces dead-time overhead in synchronous buck or half-bridge configurations
RθJA282°C/W - specifies thermal derating to 0.21A at +70°C ambient when using 2oz copper layout

Pinout & Package

Package: SOT23 - surface-mount, 3-pin plastic package (0.915mm × 1.30mm × 1.03mm), moisture sensitivity level 1, RoHS-compliant, matte tin-plated terminals.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Current return path for P-channel conductionConnected to higher potential rail; provides reference for gate control and body diode anode
2 (Gate)Control electrode for channel formationAccepts negative VGS; internal ESD diode protects against ±10μA leakage up to ±20V
3 (Drain)Current output terminalConnected to load; withstands -100V blocking and conducts up to -1.0A pulsed current

Key Features

FeatureDesign Value
Low gate threshold voltageVGS(TH) down to -1.0V enables direct drive from 3.3V logic without level-shifting circuitry
ESD protectionIntegrated gate-body diode structure meets HBM ≥2kV, eliminating need for external TVS in board-level ESD zones
Fast switching speed17.8ns reverse recovery and 3.3ns turn-on delay support >500kHz PWM in compact power stages
Small SOT23 footprint0.008g weight and 2.4mm × 1.3mm outline allow placement in tight automotive ECUs and sensor modules
AEC-Q101 qualificationValidated for -55°C to +150°C operation with PPAP documentation, supporting automotive safety-critical subsystems

Applications

DC-DC Converter ControlBattery Isolation Switch

Use Scenario: High-side switch in 12V-to-5V buck converter for infotainment system power rails.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as synchronous rectifier or high-side switch, controlled by PWM signal with dead-time management.

Use Value: Low RDS(ON) and fast tF = 4.9ns reduce conduction and switching losses, improving efficiency by ~2.1% over comparable 5Ω devices at 300kHz.

Use Scenario: Reverse-polarity and overvoltage protection in 12V/24V battery backup circuits for ADAS sensors.

IC Role / Device Role / Timing Role: High-side disconnect switch activated during fault detection, leveraging body diode for forward conduction during normal operation.

Use Value: Integrated body diode with VSD = -0.82V eliminates need for external Schottky, reducing BOM count and PCB area by 15%.

Solid-State Relay DriverLamp/Solenoid Load Interface

Use Scenario: Replacement for electromechanical relays in HVAC actuator control modules.

IC Role / Device Role / Timing Role: Low-duty-cycle load switch driving inductive loads up to 0.42A continuous body diode current.

Use Value: AEC-Q101 qualification and 150°C max junction temperature ensure 15-year field life in under-hood environments with no contact wear or bounce.

Use Scenario: LED headlamp dimming and solenoid valve activation in body control modules.

IC Role / Device Role / Timing Role: Gate-driven switch interfacing MCU GPIOs to 12V lamp/solenoid loads, with built-in ESD protection.

Use Value: -3.0V max VGS(TH) guarantees full enhancement even with 10% supply droop, preventing partial turn-on and thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN10H4D2S-7N-channel counterpart with same RDS(ON) and VDSS, but requires high-side gate driver or bootstrap circuitryNot suitable for direct GPIO drive; used where N-channel topology is preferred for lower RDS(ON) at same die sizeSelect only if existing design uses N-channel biasing and gate drive infrastructure is available
SI2301DDS-T1-GE3Lower VDSS (-20V), higher RDS(ON) (120mΩ @ -4.5V), not AEC-Q101 qualifiedLimited to 12V systems; lacks automotive qualification and thermal margin for under-hood useAcceptable for non-automotive consumer applications where cost is prioritized over qualification and voltage margin

Compared with DMN10H4D2S-7 and SI2301DDS-T1-GE3, DMP10H4D2SQ-13 uniquely combines AEC-Q101 compliance, -100V rating, and direct 3.3V/5V logic compatibility-making it the only drop-in solution for automotive high-side switching where qualification, voltage headroom, and gate simplicity are jointly required.

Availability

DMP10H4D2SQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, battery management systems, and solid-state relay modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMP10H4D2SQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with operations certified to IATF 16949 for automotive-grade manufacturing.

This device belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for automotive power management, load switching, and energy-efficient control in harsh-environment electronic control units.

FAQ

What is the maximum operating junction temperature for DMP10H4D2SQ-13?

The absolute maximum junction temperature is +150°C, validated per AEC-Q101 stress testing. Thermal derating begins above +70°C ambient, with continuous drain current reduced to -0.21A at +70°C using the 2oz copper pad layout specified in the datasheet.

Does DMP10H4D2SQ-13 require external gate resistors for automotive EMI compliance?

No external gate resistor is mandated for basic functionality, but a 10Ω series resistor is recommended in high-noise automotive environments to dampen ringing and meet CISPR 25 Class 5 radiated emissions limits-verified in Diodes' reference layout with 2oz copper and proper grounding.

Can DMP10H4D2SQ-13 be used in linear regulation mode?

It is not optimized for linear operation: RDS(ON) variation with temperature (±20% from -55°C to +150°C) and limited safe operating area (SOA) at DC bias restrict sustained linear use. Designed for switching applications only; linear mode risks thermal runaway above 100mW dissipation without active cooling.

Is the SOT23 package of DMP10H4D2SQ-13 compatible with standard reflow profiles?

Yes-the SOT23 package is rated for moisture sensitivity level 1 and supports JEDEC J-STD-020D-compliant lead-free reflow profiles, including peak temperatures up to 260°C for 30 seconds. Diodes confirms full reliability after three reflow cycles using standard SnAgCu solder paste.

DMP10H4D2SQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
4.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
87 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
380mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

DMP10H4D2SQ-13 FAQ

1.How can I place an order for DMP10H4D2SQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP10H4D2SQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP10H4D2SQ-13 reliable?

The price and inventory of DMP10H4D2SQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP10H4D2SQ-13 is usually 5 days.

3.What payment methods are accepted for DMP10H4D2SQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP10H4D2SQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP10H4D2SQ-13?

DMP10H4D2SQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP10H4D2SQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP10H4D2SQ-13?

For technical support, including DMP10H4D2SQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP10H4D2SQ-13 requirements.

6.How does Aetrix verify that DMP10H4D2SQ-13 is sourced from the original manufacturer or authorized distributors?

All DMP10H4D2SQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP10H4D2SQ-13 meets industry standards.

7.What is the process for return or replacement of DMP10H4D2SQ-13?

All DMP10H4D2SQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP10H4D2SQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP10H4D2SQ-13 part is unused and in its original packaging.

Return procedure for DMP10H4D2SQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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