Diodes Incorporated DMP2004UFG-13

Overview

DMP2004UFG from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for -115A continuous drain current at TC = +25°C, with R_DS(ON) of 3.0mΩ at V_GS = -10V and 4.0mΩ at V_GS = -4.5V. It serves as a high-current load switch in power management subsystems for industrial DC-DC converters and battery-powered equipment.

For engineers reviewing the DMP2004UFG datasheet, DMP2004UFG pinout, DMP2004UFG application, or DMP2004UFG equivalent, key selection criteria include low gate threshold voltage (-0.5 to -1.1V), thermally efficient PowerDI3333-8 package with exposed drain pad, and body diode forward voltage of -0.7 to -1.2V at -10A - critical for synchronous rectification and reverse polarity protection designs.

Technical Context

This P-channel MOSFET operates with gate-source voltage range ±12V and drain-source breakdown voltage of -20V. Its low R_DS(ON) enables high-efficiency switching at high currents, while total gate charge of 83nC at V_GS = -10V supports fast turn-on with controlled dV/dt.

The device features a normalized on-resistance variation of ≤1.3× over -55°C to +150°C junction temperature and exhibits 40.5mJ single-pulse avalanche energy (L = 0.1mH), confirming ruggedness under transient overvoltage conditions in unregulated power rails.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 - thermally enhanced 8-pin molded plastic package with exposed drain pad for low R_θJC (2.4°C/W) and board-area reduction versus SO-8 (33% footprint).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMP2004UFG, DMT2004LK3-13 trades 25A current headroom for reduced gate drive demand, while SI7157DP-T1-GE3 sacrifices 33% board area efficiency and thermal performance to maintain SO-8 compatibility - making DMP2004UFG optimal for new high-density, high-current power designs.

Availability

DMP2004UFG-13 is available at Aetrix Electronics and suitable for industrial DC-DC converters, battery-powered equipment, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for DMP2004UFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMP2004UFG belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, low-voltage load switching and power management in space- and thermally-constrained applications.

FAQ

What is the maximum safe operating temperature for DMP2004UFG?

The DMP2004UFG has an operating junction temperature range of -55°C to +150°C. Its R_DS(ON) increases by ≤30% at +150°C versus +25°C, and thermal shutdown is not built-in - system-level thermal monitoring must ensure T_J remains within this limit using the measured R_θJC of 2.4°C/W and PCB copper mass.

Can DMP2004UFG be used in synchronous rectification topologies?

Yes - its low R_DS(ON) (3.0mΩ @ -10V), fast turn-on delay (8.2ns), and robust body diode (V_SD = -0.7V @ -10A) make it suitable for synchronous rectification in buck, boost, and flyback converters up to 300kHz. Gate drive must provide sufficient negative voltage swing to ensure full enhancement.

Is DMP2004UFG qualified for automotive applications?

The DMP2004UFG is not AEC-Q101 qualified per its datasheet. Diodes states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing - customers needing automotive qualification must contact Diodes directly for designated part numbers such as DMP2004UFG-Q.

How does the PowerDI3333-8 package improve thermal performance over SO-8?

PowerDI3333-8 reduces R_θJC to 2.4°C/W versus ~6°C/W for SO-8 due to its exposed drain pad soldered directly to large PCB copper areas. This allows 52W continuous power dissipation at T_C = +25°C - more than double SO-8's capability - and occupies only 33% of the board area, enabling denser power stage layouts.