Diodes Incorporated DMP2004UFG-7

Overview

DMP2004UFG from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in PowerDI3333-8 package, optimized for high-current load switching with R_DS(ON) as low as 2.2 mΩ at V_GS = −10 V and continuous drain current up to −115 A at T_C = +25°C. It serves as a compact, thermally efficient high-side or low-side power switch in DC/DC converters, battery protection circuits, and hot-swap controllers.

For engineers reviewing the DMP2004UFG datasheet, DMP2004UFG pinout, DMP2004UFG application, or DMP2004UFG equivalent, this part is selected for high-density power management where low conduction loss, fast switching (t_F = 75.2 ns), and robust avalanche energy rating (E_AS = 40.5 mJ) are critical design requirements.

Technical Context

This MOSFET employs a trench-gate process to achieve ultra-low R_DS(ON) while maintaining controlled gate charge (Q_g = 83 nC at V_GS = −10 V) and low Crss (589 pF), enabling efficient hard-switching operation in synchronous buck topologies. Its −20 V V_DSS rating and ±12 V V_GSS support robust gate drive margin in 3.3 V and 5 V logic-controlled systems.

The device integrates an intrinsic body diode with V_SD = −0.7 V at −10 A and t_RR = 25 ns, suitable for freewheeling paths in non-synchronous converters. Thermal design is enabled by its exposed drain pad and low R_θJC of 2.4°C/W, allowing direct thermal coupling to PCB copper planes.

Key Specifications

Pinout & Package

Package: PowerDI^®3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 1–4 and 6–8 are source terminals; pin 5 is gate; drain connected to underside thermal pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.

Compared with DMT2004LK3-13 and SiR206DP-T1-GE3, the DMP2004UFG delivers best-in-class power density (lowest mm²/A ratio) and fastest switching among 20 V P-channel devices in its class, making it optimal for space-constrained, high-frequency power designs where thermal interface to PCB dominates cooling strategy.

Availability

DMP2004UFG is available at Aetrix Electronics and suitable for battery protection circuits, hot-swap controllers, and industrial PLC output drivers requiring stable component supply and long-term production continuity.

Supply support for DMP2004UFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The PowerDI^® MOSFET product line targets high-efficiency, high-density power conversion and load switching applications-specifically engineered to replace legacy SO-8 and TO-252 packages with superior thermal and electrical performance in minimal PCB area.

FAQ

What is the maximum safe operating junction temperature for DMP2004UFG?

The DMP2004UFG has an absolute maximum junction temperature (T_J) of +150°C, validated across its full operating range (−55°C to +150°C). Derating curves in Figure 12 confirm safe operation up to 100 A continuous at T_C = +70°C, provided the PCB uses ≥2 oz copper with thermal vias under the exposed drain pad.

Can DMP2004UFG be used in automotive applications?

The DMP2004UFG is not AEC-Q101 qualified; however, Diodes Incorporated offers automotive-grade variants (e.g., DMP2004UFQ) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening. For non-safety-critical 12 V accessory circuits, DMP2004UFG may be used subject to customer qualification per internal reliability testing.

How does the PowerDI3333-8 package improve thermal performance over SO-8?

PowerDI3333-8 achieves R_θJC = 2.4°C/W versus ~6°C/W for SO-8 due to its direct-exposed drain pad design and optimized copper leadframe. This reduces junction-to-board thermal resistance by >60%, enabling 2.2× higher continuous current at the same PCB thermal budget without added heatsinking.

Is gate resistive damping required for stable switching?

A 1–5 Ω series gate resistor is recommended to damp ringing caused by L_GS and C_iss interaction, especially at >500 kHz switching frequencies. The device's internal R_G = 4.6 Ω provides baseline damping, but external tuning ensures optimal EMI and shoot-through immunity in half-bridge configurations.