Diodes Incorporated DMP2007UFG-7

Overview

DMP2007UFG from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in POWERDI®3333-8 package, optimized for high-efficiency load switching with R_DS(ON) as low as 4.4 mΩ at V_GS = −10 V, 40 A continuous drain current at T_C = +25°C, and −20 V V_DSS. It serves as a compact, thermally efficient power switch in battery-powered and DC-DC converter output stages.

For engineers reviewing the DMP2007UFG datasheet, DMP2007UFG pinout, DMP2007UFG application, or DMP2007UFG equivalent, key selection criteria include its low gate charge (Q_g = 39 nC @ V_GS = −4.5 V), robust avalanche energy rating (E_AS = 50 mJ), and thermal resistance (R_θJC = 3.0°C/W) enabling high-density board layouts.

Technical Context

This P-channel MOSFET operates in enhancement mode with a gate threshold voltage range of −0.4 V to −1.3 V, ensuring reliable turn-on at logic-level gate drive (e.g., −4.5 V). Its low R_DS(ON) across V_GS = −2.5 V to −10 V supports efficient operation in always-on or hot-swap configurations where gate drive voltage is constrained.

The device integrates a body diode with V_SD = −0.7 V (typ.) at I_S = −10 A and exhibits fast switching dynamics: t_d(ON) = 10.1 ns, t_r = 9.8 ns, and Q_gd = 9.6 nC - critical for minimizing conduction and switching losses in synchronous buck topologies and OR-ing circuits.

Key Specifications

Pinout & Package

Package: POWERDI®3333-8 - surface-mount, thermally enhanced 8-pin leadless package with exposed drain pad; footprint occupies only 33% of SO-8 area while delivering superior thermal performance (R_θJC = 3.0°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMG2305UVT-7 and SI2301DS-T1-BE3, DMP2007UFG delivers 8× lower on-resistance at −4.5 V and 75× better thermal performance, making it the only viable choice for sustained 20–40 A load switching in compact industrial and automotive modules.

Availability

DMP2007UFG is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial PLC output stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DMP2007UFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.

The DMP2007UFG belongs to Diodes' POWERDI® high-current MOSFET product line, engineered specifically for high-density, thermally demanding power-switching applications in portable, industrial, and automotive electronics.

FAQ

What is the maximum allowable gate-source voltage for DMP2007UFG?

The absolute maximum V_GS rating is ±12 V. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to −12 V to +0.3 V using Zener diodes or integrated gate drivers with rail-to-rail compliance. The device's V_GS(TH) range (−0.4 V to −1.3 V) ensures full enhancement at −4.5 V, making it compatible with standard logic-level outputs.

Can DMP2007UFG be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(ON) (normalized R_DS(ON) increases with junction temperature, per Figure 6) enables inherent current sharing. To ensure balanced operation, use matched gate resistors (≤1 Ω), symmetrical PCB routing, and shared thermal vias to the same copper plane. Derate total current by 15% versus single-device rating for reliability.

Does DMP2007UFG require external gate resistors in typical switching applications?

A gate resistor of 1–5 Ω is recommended to damp ringing caused by parasitic inductance in the gate loop, especially at switching frequencies above 500 kHz. The device's low C_iss (4621 pF) and R_G (3.2 Ω) make it susceptible to oscillation without controlled gate drive impedance. Values exceeding 10 Ω increase switching time and losses unnecessarily.

Is the POWERDI®3333-8 package compatible with standard reflow profiles?

Yes - the package is qualified for JEDEC J-STD-020 Level 1 moisture sensitivity and supports peak reflow temperatures up to 260°C for ≤30 seconds. Its matte tin annealed finish ensures solderability per MIL-STD-202 Method 208. Use standard lead-free reflow profile with ramp rate ≤3°C/s and soak zone at 150–200°C for 60–120 s before peak.