My Inquiry
My Account
Diodes Incorporated DMP2008USS-13
- Part No.:
- DMP2008USS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMP2008USS-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V SO-8 T&R 2.
- Quantity:
- Payment:
- Shipping:
Inventory:3,736
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMP2008USS from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in SO-8 package, rated for -13A continuous drain current at VGS = -4.5V, with RDS(ON) as low as 6.5mΩ (typ), and optimized for high-efficiency load switching in DC-DC converters and power rails.
For engineers reviewing the DMP2008USS datasheet, DMP2008USS pinout, DMP2008USS application, or DMP2008USS equivalent, this device supports low-voltage logic-level gate drive, delivers robust UIS performance, and meets stringent thermal and reliability requirements for industrial and embedded power management designs.
Technical Context
This P-channel MOSFET operates with a gate threshold voltage of -0.4V to -1.0V, enabling turn-on with standard 3.3V or 5V logic signals. Its low input capacitance (Ciss = 6820pF) and fast switching times (tD(ON) = 22ns, tF = 124ns) support high-frequency synchronous rectification and PWM-controlled power stages.
The device features a fully characterized body diode with VSD = -0.7V (typ) at -10A and reverse recovery charge QRR = 16nC, making it suitable for bidirectional current paths and freewheeling applications where diode conduction is unavoidable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Maximum blocking voltage for 3.3V/5V rail protection and battery-side switching |
| RDS(ON) | 6.5mΩ (typ) @ VGS = -4.5V - Enables <100mW conduction loss at 12A, critical for thermal-limited PCB layouts |
| ID (cont) | -13A @ TA = +25°C - Supports high-current load switches without external heatsinking on 2oz copper |
| Ciss | 6820pF @ VDS = -10V - Low gate charge demand reduces driver power and EMI in high-speed switching |
| Qg | 76nC @ VGS = -4.5V - Enables efficient gate driving with standard logic-level drivers or integrated PMICs |
| EAS | 119mJ - Confirmed avalanche energy rating ensures robustness against inductive load transients |
| RθJA | 54°C/W (with 1-inch² copper) - Defines thermal derating curve for sustained operation up to 125°C ambient |
Pinout & Package
SO-8 surface-mount package with exposed drain pad for thermal enhancement; molded green compound, RoHS-compliant, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting logic-level negative voltage; requires no level-shifting for 3.3V/5V microcontrollers |
| 2 (S) | Source | Reference node for gate drive; tied to system ground or positive rail depending on high-side vs. low-side configuration |
| 3 (D) | Drain | Main current path output; electrically connected to exposed pad for thermal dissipation and current handling |
| 4 (D) | Drain | Parallel drain connection to Pin 3; increases current capacity and thermal conduction to PCB copper |
| 5 (D) | Drain | Parallel drain connection to Pins 3–4; used for high-current routing and thermal spreading |
| 6 (D) | Drain | Parallel drain connection to Pins 3–5; provides redundant current path and enhanced thermal interface |
| 7 (S) | Source | Secondary source connection; improves current sharing and reduces bond wire resistance in high-pulse applications |
| 8 (S) | Source | Secondary source connection; lowers effective RDS(ON) under pulsed conditions and improves layout symmetry |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at logic-level VGS | 9mΩ max @ VGS = -4.5V enables efficient 3.3V-driven load switching without gate boosters |
| 100% UIS tested | Guaranteed avalanche ruggedness (IAS = -49A, EAS = 119mJ) eliminates need for external snubbers in inductive loads |
| Low Ciss and fast switching | 6820pF input capacitance and 22ns turn-on delay reduce switching losses in >500kHz DC-DC topologies |
| Green, halogen-free construction | Meets IEC 61249-2-21 and JEDEC JS709C standards with <900ppm Br+Cl and <1000ppm Sb |
| SO-8 thermal design | Exposed drain pad and 7-pin parallel drain configuration deliver 2.3W steady-state power dissipation on FR-4 |
Applications
| USB Power Delivery Switch | Industrial PLC I/O Module |
|---|---|
|
Use Scenario: Bidirectional 5V/20V USB PD power path control with overcurrent and reverse-polarity protection. IC Role / Device Role / Timing Role: High-side P-channel switch controlling upstream/downstream power flow; body diode enables reverse conduction during negotiation phases. Use Value: 6.5mΩ RDS(ON) limits voltage drop to <80mV at 12A, preserving PD compliance margins while supporting 100W delivery. |
Use Scenario: Isolated 24V DC digital output stage driving solenoids, relays, and indicator LEDs in factory automation. IC Role / Device Role / Timing Role: Load switch with integrated avalanche capability; handles inductive kickback without external clamping diodes. Use Value: 119mJ EAS rating sustains repeated 48V/1A inductive turn-off events per IEC 61000-4-4, reducing BOM count by one component. |
| Laptop Battery Protection | Automotive Body Control Module |
|
Use Scenario: Secondary over-discharge and short-circuit protection between battery pack and system power rail in portable computing. IC Role / Device Role / Timing Role: Low-threshold P-MOSFET acting as back-to-back switch with companion N-channel device; enables ultra-low quiescent current shutdown. Use Value: VGS(TH) down to -0.4V ensures reliable turn-on even after battery aging reduces open-circuit voltage below 3.0V. |
Use Scenario: 12V accessory power distribution in BCMs, including mirror heaters, seat controls, and lighting zones. IC Role / Device Role / Timing Role: Logic-level controlled power switch with AEC-Q101 qualification path; supports pulse-width modulated dimming and diagnostics. Use Value: SO-8 footprint and 54°C/W RθJA allow direct integration into compact BCM modules without thermal vias or heatsinks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load-switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(ON) = 45mΩ @ VGS = -4.5V; smaller SOT-23 package; lower ID = -4.2A | Targeted at space-constrained, sub-5A applications; lacks SO-8 thermal mass and multi-drain layout | Select when board area is critical and peak current ≤4A; avoid for sustained >3A loads due to thermal limitations. |
| SI2301BDS-T1-GE3 | RDS(ON) = 115mΩ @ VGS = -4.5V; SOT-23; ID = -2.7A; no UIS rating specified | Cost-optimized for low-power always-on circuits; not validated for repetitive avalanche stress | Use only in non-inductive, low-duty-cycle applications; verify system-level transient immunity if replacing DMP2008USS. |
Compared with DMG2305UVT-7 and SI2301BDS-T1-GE3, DMP2008USS delivers 5× lower RDS(ON) and 3× higher current capability in the same SO-8 footprint, with production-tested UIS ensuring field reliability in automotive and industrial environments.
Availability
DMP2008USS is available at Aetrix Electronics and suitable for USB PD power path management, industrial PLC output stages, laptop battery protection circuits, and automotive body control modules requiring stable component supply across long production lifecycles.
Supply support for DMP2008USS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and quality systems aligned with AEC-Q200.
This device belongs to Diodes' logic-level P-channel MOSFET product line, engineered specifically for high-current, low-RDS(ON) load switching in space- and thermally-constrained power management systems.
FAQ
What is the maximum safe operating temperature for DMP2008USS?
The junction temperature must not exceed +150°C. With RθJA = 54°C/W (on 1-inch² copper), the device supports continuous operation at +70°C ambient while delivering -12A. Derating curves in Figure 12 define safe current limits for pulsed operation and elevated temperatures.
Does DMP2008USS require a gate resistor for stability?
A gate resistor of 6Ω is used in the datasheet's switching time test conditions, but no minimum value is mandated. For EMI-sensitive applications, a 10–47Ω resistor suppresses ringing without significantly increasing tD(ON); values above 100Ω degrade switching speed and increase losses.
Can DMP2008USS be used in high-side switch configurations?
Yes - its P-channel architecture and -0.4V to -1.0V VGS(TH) enable direct high-side switching from 3.3V or 5V logic. Gate drive must reference the source node; level-shifting is unnecessary unless interfacing with ground-referenced controllers.
Is DMP2008USS qualified for automotive use?
While not pre-qualified to AEC-Q101, Diodes offers an automotive-grade variant (DMP2008USSQ) with PPAP documentation and IATF 16949 manufacturing. Standard DMP2008USS is widely deployed in non-safety-critical automotive modules where customer qualification is performed.
DMP2008USS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @12A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 159 nC @ 10 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6820 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMP2008USS-13 FAQ
1.How can I place an order for DMP2008USS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2008USS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2008USS-13 reliable?
The price and inventory of DMP2008USS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2008USS-13 is usually 5 days.
3.What payment methods are accepted for DMP2008USS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2008USS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2008USS-13?
DMP2008USS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2008USS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2008USS-13?
For technical support, including DMP2008USS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2008USS-13 requirements.
6.How does Aetrix verify that DMP2008USS-13 is sourced from the original manufacturer or authorized distributors?
All DMP2008USS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2008USS-13 meets industry standards.
7.What is the process for return or replacement of DMP2008USS-13?
All DMP2008USS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2008USS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2008USS-13 part is unused and in its original packaging.
Return procedure for DMP2008USS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMP2008USS-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
