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Diodes Incorporated DMP2010UFG-13
- Part No.:
- DMP2010UFG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMP2010UFG-13.pdf
- Description:
- MOSFET P-CH 20V 12.7A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:7,420
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Product details
Overview
DMP2010UFG-13 from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 9.5mΩ RDS(ON) at VGS = −4.5V, −40A continuous drain current at TC = +25°C, and −20V drain-source breakdown voltage. It serves as a high-efficiency load switch in compact power management circuits for portable and space-constrained systems.
For engineers reviewing the DMP2010UFG datasheet, DMP2010UFG pinout, DMP2010UFG application, or DMP2010UFG equivalent, key selection criteria include low on-resistance at logic-level gate drive (−2.5V/−4.5V), thermally efficient PowerDI3333-8 footprint, and robust safe operating area for pulsed load switching in battery-powered devices.
Technical Context
This P-channel MOSFET uses planar trench-gate technology to achieve low RDS(ON) while maintaining fast switching performance (tD(OFF) = 235ns, Qg = 50nC at VGS = −4.5V). Its gate threshold voltage range (−0.4V to −1.2V) enables reliable turn-on with standard 3.3V or 5V logic-level control signals.
The device integrates a body diode with VSD = −0.7V at IS = −10A and tRR = 64ns, supporting synchronous rectification and reverse-current protection in DC-DC converters and USB power delivery paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20V - supports input rails up to 16V with 20% margin against transients |
| RDS(ON) | 9.5mΩ @ VGS = −4.5V - delivers ≤1.5W conduction loss at 4A load current |
| ID (continuous) | −40A @ TC = +25°C - enables high-current load switching with external heatsinking |
| Qg | 50nC @ VGS = −4.5V - allows fast turn-on with ≤10Ω gate driver without excessive power dissipation |
| RθJC | 4°C/W - permits direct thermal coupling to PCB copper plane for effective junction-to-case heat transfer |
| tRR | 64ns - minimizes reverse-recovery losses during hard-switched commutation |
| VGS(TH) | −0.4V to −1.2V - ensures full enhancement with 3.3V GPIO or dedicated level-shifted control |
Pinout & Package
Package: PowerDI3333-8 - surface-mount, 8-terminal thermally enhanced plastic package with exposed drain pad; footprint occupies 33% board area of SO-8, rated for 2.3W power dissipation on 1-inch² copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Internally connected to exposed metal pad - primary current path and thermal conduction path to PCB |
| 8 | Source (S) | High-side reference node for load-switch configuration; connects to supply rail |
| G (Gate) | Control Input | Exposed top-side metallization - requires low-inductance routing to minimize switching oscillation |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at −2.5V gate drive | 12.5mΩ - enables direct interface with 2.5V/3.3V microcontroller outputs without level shifters |
| Thermally optimized package | RθJC = 4°C/W - reduces junction temperature rise by >60% vs. SO-8 under identical power dissipation |
| Small board footprint | 3.3mm × 3.3mm outline - supports ultra-dense PCB layouts in wearables and IoT edge nodes |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb) - meets IPC-1752A environmental reporting requirements |
Applications
| Battery Protection Circuit | USB Type-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling battery discharge path. Use Value: 9.5mΩ RDS(ON) limits voltage drop to <40mV at 4A, preserving battery runtime and state-of-charge accuracy. | Use Scenario: VBUS enable/disable and fault isolation in USB-C receptacles. IC Role / Device Role / Timing Role: Bidirectional load switch managing 5–20V power path with integrated body diode. Use Value: 64ns reverse recovery time prevents shoot-through during hot-plug events and supports 100W PD3.0 compliance. |
| Industrial Sensor Node Power Rail | Portable Medical Device Load Control |
Use Scenario: Controlled power sequencing for analog front-end ICs and ADCs in field-deployed sensors. IC Role / Device Role / Timing Role: Low-noise, low-leakage power gate isolating sensitive measurement circuitry. Use Value: IDSS ≤ −1µA at −16V ensures <100nA standby leakage, extending multi-year battery life in wireless sensor networks. | Use Scenario: Isolation of therapy modules (e.g., TENS, pulse oximetry) from main system power. IC Role / Device Role / Timing Role: Safety-critical load disconnect switch with fail-safe off-state behavior. Use Value: −20V VDSS and −35A avalanche rating provide margin against ESD-induced transients per IEC 61000-4-2 Level 4. |
Availability
DMP2010UFG-13 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and industrial sensor node power rails requiring stable component supply and long-term manufacturability.
Supply support for DMP2010UFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMP2010UFG belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-density, low-voltage load switching applications where thermal efficiency and board-area savings are critical design constraints.
FAQ
What is the maximum allowable gate-source voltage for DMP2010UFG-13?
The absolute maximum VGS rating is ±10V. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be limited to −4.5V for optimal RDS(ON), or −2.5V for logic-level compatibility - both well within the safe operating range and verified in production testing per DS37848 Rev. 4-2.
Can DMP2010UFG-13 be used in automotive applications?
DMP2010UFG-13 is not AEC-Q101 qualified. While it meets industrial temperature range (−55°C to +150°C) and green material requirements, Diodes explicitly states that automotive-grade versions require separate qualification, PPAP capability, and IATF 16949 manufacturing - none of which apply to this part number per its advance information datasheet and ordering notes.
How does the PowerDI3333-8 package improve thermal performance over SO-8?
PowerDI3333-8 achieves RθJC = 4°C/W versus ~10°C/W for SO-8 due to direct copper exposure on the drain pad and optimized internal leadframe geometry. This reduces junction-to-case thermal resistance by 60%, enabling 2.3W power dissipation on FR-4 with 1-inch² copper - confirmed in Note 6 of DS37848.
Is the body diode suitable for reverse polarity protection?
Yes - the integrated body diode has VSD = −0.7V at −10A and tRR = 64ns, making it suitable for reverse-polarity protection in 5–12V systems. Its low forward voltage minimizes insertion loss, and fast recovery avoids latch-up when paired with external TVS or fuse elements per application guidance in Diodes' AN-2001 design note.
DMP2010UFG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.7A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 103 nC @ 10 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3350 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMP2010UFG-13 FAQ
1.How can I place an order for DMP2010UFG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2010UFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2010UFG-13 reliable?
The price and inventory of DMP2010UFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2010UFG-13 is usually 5 days.
3.What payment methods are accepted for DMP2010UFG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2010UFG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2010UFG-13?
DMP2010UFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2010UFG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2010UFG-13?
For technical support, including DMP2010UFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2010UFG-13 requirements.
6.How does Aetrix verify that DMP2010UFG-13 is sourced from the original manufacturer or authorized distributors?
All DMP2010UFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2010UFG-13 meets industry standards.
7.What is the process for return or replacement of DMP2010UFG-13?
All DMP2010UFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2010UFG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2010UFG-13 part is unused and in its original packaging.
Return procedure for DMP2010UFG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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