Diodes Incorporated DMP2010UFV-13

Overview

DMP2010UFV-13 from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, rated for -50A continuous drain current at TC = +25°C, with R_DS(ON) of 9.5mΩ @ V_GS = -4.5V and -20V V_DSS. It serves as a high-current load switch in compact power management circuits requiring low conduction loss and thermally efficient board layout.

For engineers reviewing the DMP2010UFV-13 datasheet, DMP2010UFV-13 pinout, DMP2010UFV-13 application, or DMP2010UFV-13 equivalent, key selection criteria include verified R_DS(ON) at low gate drive (-2.5V/-4.5V), thermal resistance (R_θJC = 3.5°C/W), safe operating area under pulsed loads, and compatibility with FR-4 PCB layouts using exposed-drain thermal bias.

Technical Context

This P-channel MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching performance (t_D(ON) = 9.7ns, t_D(OFF) = 235ns) and robust avalanche capability (E_AS = 64mJ). Its gate threshold voltage range (-0.4V to -1.2V) enables reliable turn-on with standard logic-level negative gate drive.

The device integrates a body diode with V_SD = -0.7V to -1.2V at -10A and exhibits controlled reverse recovery (t_RR = 64ns, Q_RR = 60nC), supporting synchronous rectification and bidirectional current handling in DC-DC converters and hot-swap circuits.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 × 3.30 × 0.80 mm (D × E × A), 0.65 mm pitch, matte tin-plated copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMP2010UFV-13, DMT2001UFDF-7 trades 2.0mΩ higher R_DS(ON) for 0.3mm height reduction, while Si7157DP-T1-GE3 improves conduction loss by 1.5mΩ but requires 2.5× more board area and delivers only half the thermal efficiency in unheatsinked layouts.

Availability

DMP2010UFV-13 is available at Aetrix Electronics and suitable for USB Type-C power delivery systems, industrial PLC I/O modules, and automotive body control units requiring stable component supply, long-term lifecycle support, and traceable green-material compliance.

Supply support for DMP2010UFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The PowerDI3333-8 MOSFET product line targets high-density power management in space-constrained applications, emphasizing thermal efficiency, low gate charge, and compatibility with automated SMT assembly processes.

FAQ

What is the maximum allowable gate-source voltage for DMP2010UFV-13?

The absolute maximum V_GS rating is ±10V. Operation beyond this risks irreversible gate oxide damage. For reliable long-term use, gate drive should be limited to -4.5V to -8V during turn-on and 0V during turn-off, matching the specified R_DS(ON) test conditions and avoiding Miller plateau overstress.

Can DMP2010UFV-13 be used in parallel configurations?

Yes - its negative temperature coefficient of R_DS(ON) (normalized resistance increases with junction temperature) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal plane to maintain <5°C inter-device ΔT for balanced current distribution up to -100A total.

Is the exposed drain pad electrically isolated from other terminals?

No - the exposed drain pad is internally connected to all eight drain pins (1–7 and 8 in some variants; confirmed as drain in DS39131 Fig. "PowerDI3333-8 (Type UX) Top View"). It must be soldered to a dedicated PCB copper pour tied to the system ground or power rail, not left floating or insulated.

Does DMP2010UFV-13 require a gate resistor for stability?

A series gate resistor (typically 4.7Ω–10Ω) is recommended to dampen ringing caused by gate loop inductance and Crss feedback. The datasheet's dynamic test condition (R_G = 4.7Ω) confirms this value achieves optimal t_D(ON)/t_D(OFF) balance without excessive switching loss or oscillation in typical 2-layer FR-4 layouts.