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Diodes Incorporated DMP2016UFDF-13
- Part No.:
- DMP2016UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP2016UFDF-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V U-DFN2020-6
- Quantity:
- Payment:
- Shipping:
Inventory:5,408
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Product details
Overview
DMP2016UFDF-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET optimized for high-efficiency power management in space-constrained applications. It delivers 15 mΩ RDS(ON) at VGS = −4.5 V, supports −9.5 A continuous drain current at +25°C, and features a 0.6 mm profile in U-DFN2020-6 (Type F) package - enabling use in battery management systems and compact DC-DC converters.
For engineers reviewing the DMP2016UFDF-13 datasheet, DMP2016UFDF-13 pinout, DMP2016UFDF-13 application, or DMP2016UFDF-13 equivalent, key selection criteria include low gate threshold voltage (−0.35 to −1.1 V), ESD-protected gate, 1.8 W power dissipation on enhanced PCB layout, and compatibility with 1.8 V–4.5 V logic-level drive in load-switch and reverse-polarity protection circuits.
Technical Context
This MOSFET operates as a single P-channel switch with integrated source-drain diode and gate protection circuitry. Its −20 V VDSS, ±8 V VGSS, and low RDS(ON) across VGS = −1.5 V to −4.5 V enable robust operation in low-voltage battery-fed systems where gate drive headroom is limited.
The device uses a trench-gate process to achieve high channel density in a 2.0 × 2.0 mm footprint. Thermal resistance of 70 °C/W (RθJA) under enhanced layout conditions and normalized RDS(ON) variation ≤1.8× over −55°C to +150°C support stable performance in automotive and industrial ambient environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V - Withstands up to −20 V drain-source voltage without breakdown, suitable for 12 V and 15 V rail protection. |
| RDS(ON) @ VGS = −4.5 V | 15 mΩ max - Enables <0.5 W conduction loss at 6 A, critical for thermally constrained portable designs. |
| ID (TA = +25°C) | −9.5 A - Supports high-current load switching in battery-powered equipment with minimal heatsinking. |
| VGS(TH) | −0.35 to −1.1 V - Ensures reliable turn-on with 1.8 V microcontroller GPIO or low-voltage PMIC outputs. |
| Qg @ VGS = −4.5 V | 17 nC - Low gate charge reduces drive power and switching losses in high-frequency DC-DC topologies. |
| RθJA (enhanced layout) | 70 °C/W - Achieved with 1-inch² copper pad; enables 1.1 W continuous power at +70°C ambient. |
| Ciss | 1710 pF - Predictable input capacitance simplifies gate driver sizing and EMI filtering design. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 mm × 2.0 mm × 0.6 mm, exposed thermal pad, RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top View, Marked) | Source | Primary current return path; tied to system ground or battery negative in high-side switch configurations. |
| Pin 2 | Gate | Control input; requires ESD-safe routing and <100 Ω series resistance to suppress ringing during fast switching. |
| Pin 3 | Drain | High-side power input node; connects to battery or supply rail in reverse-polarity protection circuits. |
| Pin 4 | Source | Second source terminal - paralleled with Pin 1 to reduce package inductance and improve thermal conduction. |
| Pin 5 | Drain | Second drain terminal - paralleled with Pin 3 to lower RDS(ON) and enhance current sharing capability. |
| Pin 6 (Exposed Pad) | Thermal / Source | Electrically connected to source; must be soldered to ≥100 mm² internal/external copper for thermal and electrical integrity. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables integration into ultra-thin devices (e.g., wearables, slim power banks) without height interference. |
| PCB footprint: 4 mm² | Reduces board area by >50% vs. SO-8 or TSOP-6 packages, supporting miniaturized multi-rail PMIC layouts. |
| ESD-protected gate | HBM rating ≥2 kV - eliminates need for external gate protection in automated assembly and field-deployed units. |
| Low VGS(TH) | Turns on fully with 1.8 V logic - compatible with modern ultra-low-power MCUs and I/O expanders without level shifters. |
| Green compound (94V-0) | Halogen- and antimony-free molding compound meets IPC-1752A material declaration requirements. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Input Stage |
|---|---|
|
Use Scenario: Reverse-polarity and overvoltage protection for Li-ion battery packs in portable medical devices. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery connection; activated only when polarity and voltage are valid. Use Value: 15 mΩ RDS(ON) limits voltage drop to <90 mV at 6 A, preserving battery runtime and reducing thermal stress on adjacent sensors. |
Use Scenario: Input power path control in USB-C PD sink adapters accepting 5–20 V input. IC Role / Device Role / Timing Role: Load switch isolating downstream DC-DC stages during fault or standby; controlled via PD controller GPIO. Use Value: −1.1 V max VGS(TH) ensures full enhancement with 3.3 V PD controller outputs, eliminating external bias networks. |
| Industrial Sensor Node Power Rail | Automotive Body Control Module (BCM) Subsystem |
|
Use Scenario: Selective power gating of RF transceivers and analog front-ends in wireless sensor nodes. IC Role / Device Role / Timing Role: Low-quiescent-load power switch enabling <1 µA shutdown current when subsystems are idle. Use Value: Gate leakage <±10 µA and −2.9 A continuous source current capability support long-term battery operation (>5 years) in IoT deployments. |
Use Scenario: 12 V accessory power distribution in BCM submodules (e.g., mirror heaters, seat controls). IC Role / Device Role / Timing Role: Protected high-side switch with built-in avalanche energy rating (14.5 mJ) for inductive load flyback suppression. Use Value: 16.5 A IAS and 150°C TJ rating allow direct replacement of larger SOT-23-6 switches without derating in under-hood environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(ON) = 42 mΩ @ −4.5 V; smaller 1.6 × 1.6 mm U-DFN1616-6 package; no specified avalanche rating. | Limited to low-current (<3 A), ultra-compact applications where thermal margin is less critical. | Select when board area is primary constraint and peak current remains below 3 A. |
| Si2305DS-T1-GE3 | RDS(ON) = 50 mΩ @ −4.5 V; SOT-23-3 package; higher RθJA (200 °C/W); no ESD protection. | Suitable for cost-sensitive consumer electronics with relaxed thermal and reliability requirements. | Choose only for non-critical, low-volume applications where gate drive voltage exceeds −4.5 V and ESD immunity is externally managed. |
Compared with DMG2305UVT-7 and Si2305DS-T1-GE3, DMP2016UFDF-13 provides 2.8× lower RDS(ON), 2.5× higher avalanche energy, and integrated ESD protection - making it the preferred choice for high-reliability, high-current, and thermally demanding power-switching roles.
Availability
DMP2016UFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery adapters, and industrial sensor node power rails requiring stable component supply and long-lifecycle availability.
Supply support for DMP2016UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' U-DFN Power MOSFET product line, engineered specifically for high-density, low-voltage power switching in portable, automotive, and industrial applications where thermal efficiency and board space are critical.
FAQ
What is the maximum safe operating junction temperature for DMP2016UFDF-13?
The absolute maximum junction temperature is +150°C, verified per JEDEC JESD22-A104. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating curves in Figure 7 show RDS(ON) increases by ~1.6× from −55°C to +150°C at fixed VGS, confirming thermal design must maintain TJ ≤135°C for 10-year reliability in continuous operation.
Can DMP2016UFDF-13 be used in linear-regulator mode?
No - its Safe Operating Area (SOA) curve (Figure 12) shows only pulse-rated operation above VDS > 5 V and ID > 2 A. Continuous linear operation would exceed thermal limits due to insufficient RθJA margin; the device is rated for switching applications only, not analog pass-element use.
Is the exposed thermal pad electrically isolated?
No - the exposed pad (Pin 6) is internally connected to the source terminals (Pins 1 and 4). It must be soldered to a PCB copper pour tied to the source net for both thermal performance and electrical integrity. Floating or grounded-to-chassis connections will cause malfunction or damage.
Does DMP2016UFDF-13 meet AEC-Q101 for automotive use?
No - the datasheet explicitly states automotive qualification requires separate AEC-Q101 testing and PPAP documentation, which is not included for this part number. It is rated for industrial temperature range (−55°C to +150°C), but not certified for automotive applications unless explicitly qualified by Diodes upon request.
DMP2016UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1710 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMP2016UFDF-13 FAQ
1.How can I place an order for DMP2016UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2016UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2016UFDF-13 reliable?
The price and inventory of DMP2016UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2016UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMP2016UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2016UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2016UFDF-13?
DMP2016UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2016UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2016UFDF-13?
For technical support, including DMP2016UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2016UFDF-13 requirements.
6.How does Aetrix verify that DMP2016UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMP2016UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2016UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMP2016UFDF-13?
All DMP2016UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2016UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2016UFDF-13 part is unused and in its original packaging.
Return procedure for DMP2016UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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