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Diodes Incorporated DMP2021UFDE-13
- Part No.:
- DMP2021UFDE-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMP2021UFDE-13.pdf
- Description:
- MOSFET P-CH 20V 11.1A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,184
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Product details
Overview
DMP2021UFDE from Diodes Incorporated is a P-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring -20V VDSS, 16mΩ RDS(ON) at VGS = -4.5V, and -9.0A continuous drain current at TA = +25°C. It serves as a low-side load switch in battery-powered systems requiring compact, low-RDS(ON) switching with ESD-protected gate integrity.
For engineers reviewing the DMP2021UFDE datasheet, DMP2021UFDE pinout, DMP2021UFDE application, or DMP2021UFDE equivalent, key selection criteria include gate threshold voltage (-0.35V to -1.0V), thermal resistance (67°C/W under enhanced layout), and U-DFN2020-6 package compatibility with space-constrained DC-DC converter and battery protection designs.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining fast switching performance and robust avalanche capability (EAS = 38mJ). Its -1.0V typical gate threshold enables direct logic-level drive from 1.8V/2.5V microcontrollers without level-shifting.
The integrated source-drain diode supports synchronous rectification in buck converters, with VSD = -0.8V at IS = -1.0A and tRR = 48ns. Thermal design leverages a 0.6mm profile and low RθJC = 18°C/W for efficient heat transfer to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Supports input rails up to 20V in battery management and USB PD sink applications. |
| RDS(ON) | 16mΩ @ VGS = -4.5V - Enables <150mW conduction loss at 9A, critical for thermal budget in portable devices. |
| ID (cont) | -9.0A @ TA = +25°C - Sustains full-load current in compact 2A–10A DC-DC output stages with minimal derating. |
| VGS(TH) | -0.35V to -1.0V - Ensures reliable turn-on with 1.8V GPIOs and reduces shoot-through risk in half-bridge configurations. |
| Qg | 34nC @ VGS = -4.5V - Limits gate drive power to <1.7mW at 500kHz switching, easing driver IC selection. |
| RθJA | 67°C/W (enhanced layout) - Allows 1.2W dissipation before junction exceeds 125°C on standard 1-inch² copper pad. |
| Ciss | 2760pF - Balances switching speed and EMI control in 500kHz–1MHz power stages. |
Pinout & Package
U-DFN2020-6 (Type E) package: 2.0mm × 2.0mm × 0.6mm body with exposed thermal pad; RoHS-compliant NiPdAu-plated terminals; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 6, 5 | Drain (D) | Four parallel drain terminals reduce inductance and improve current sharing in high-di/dt switching. |
| 3 | Source (S) | Primary source connection; tied to thermal pad for optimal heat sinking and low-inductance return path. |
| 4 | Gate (G) | ESD-protected gate input; requires <1.5V overdrive margin above VGS(TH) for full enhancement. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile 0.6mm height | Enables integration into ultra-thin wearables and stacked PCB assemblies where Z-height is constrained to <0.7mm. |
| ESD-protected gate | Withstands >2kV HBM per JESD22-A114, eliminating need for external gate protection in handheld device assembly lines. |
| Halogen- and antimony-free "Green" compound | Meets IPC-1752A Class 3 reporting requirements and supports automotive PPAP documentation for Tier-1 suppliers. |
| 165°C/W RθJA (standard layout) | Permits operation at 750mA continuous current on minimal FR-4 pads, reducing layout complexity for cost-sensitive IoT nodes. |
Applications
| Battery Protection Circuit | USB Type-C Power Delivery Sink |
|---|---|
|
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side protection switch controlling battery discharge path with fast fault response (<100ns propagation delay). Use Value: 16mΩ RDS(ON) limits voltage drop to <144mV at 9A, preserving battery runtime and enabling accurate coulomb counting. |
Use Scenario: VBUS discharge and load switching in USB-C receptacles compliant with USB PD 3.0 specification. IC Role / Device Role / Timing Role: Controlled VBUS pull-down switch activated during port detach or fault conditions. Use Value: -20V rating safely handles 20V PD profiles; 34nC Qg ensures <5μs turn-off time with 10mA gate driver, meeting USB-C timing compliance. |
| Portable Medical Sensor Node | Industrial IoT Edge Controller |
|
Use Scenario: Power gating of BLE radio and analog front-end in battery-operated patient monitors. IC Role / Device Role / Timing Role: Logic-controlled power switch enabling deep-sleep mode with <1µA leakage (IDSS ≤ -1µA). Use Value: -0.35V minimum VGS(TH) guarantees turn-on from 1.8V MCU GPIOs, eliminating level shifters and saving BOM cost. |
Use Scenario: 12V rail sequencing and hot-swap control in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Inrush current limiter and short-circuit protected power switch for auxiliary peripherals. Use Value: 38mJ EAS withstands repetitive 27A avalanche events during 12V hot-plug transients, improving field reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(ON) = 28mΩ @ -4.5V; VDSS = -20V; same U-DFN2020-6 package but higher on-resistance and lower ID (-4.2A). | Lower current handling limits use to sub-5A loads; less suitable for high-power USB PD sinks. | Select when cost sensitivity outweighs conduction loss and thermal constraints are relaxed. |
| AO3401 | RDS(ON) = 44mΩ @ -4.5V; VDSS = -30V; SO-23 package with higher RθJA (200°C/W) and no ESD protection. | Larger footprint and inferior thermal performance restrict use to non-portable, low-frequency applications. | Choose only if legacy SO-23 board space is fixed and ESD robustness is managed externally. |
Compared with DMG2305UVT-7 and AO3401, DMP2021UFDE delivers 43% lower RDS(ON) than the former and 64% lower than the latter at -4.5V, enabling higher efficiency in thermally constrained 5–10A power paths while maintaining industry-leading ESD immunity and green compliance.
Availability
DMP2021UFDE is available at Aetrix Electronics and suitable for battery management systems, USB Type-C power delivery implementations, and industrial IoT edge controllers requiring stable component supply and long-term lifecycle support.
Supply support for DMP2021UFDE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This device belongs to Diodes' U-DFN Power MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion in portable and automotive-qualified applications.
FAQ
What is the maximum safe operating temperature for DMP2021UFDE?
The junction temperature must not exceed +150°C under any operating condition. With RθJA = 67°C/W on an enhanced layout, the device sustains 1.2W power dissipation at +25°C ambient. Derating is required above +25°C ambient per the 116°C/W transient curve in Figure 12.
Can DMP2021UFDE be used in synchronous rectification?
Yes - its integrated source-drain diode has VSD = -0.8V at -1.0A and tRR = 48ns, enabling use as a synchronous rectifier in buck converters up to 1MHz. Gate drive must be timed to avoid shoot-through, leveraging the -1.0V VGS(TH) for precise turn-on control.
Is the thermal pad electrically isolated?
No - the exposed thermal pad is internally connected to the drain (pins 1, 2, 6, 5). It must be soldered to a PCB drain-copper pour and cannot be used as a separate ground or source connection. This configuration enhances thermal transfer while maintaining electrical integrity.
Does DMP2021UFDE meet AEC-Q101 qualification?
No - this part is not AEC-Q101 qualified. Diodes Incorporated offers automotive-grade variants (e.g., DMP2021UFDE-Q) with PPAP documentation, AEC-Q101 stress testing, and IATF 16949 manufacturing. For automotive use, contact Diodes' automotive sales team for qualified alternatives.
DMP2021UFDE-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 59 nC @ 8 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2760 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMP2021UFDE-13 FAQ
1.How can I place an order for DMP2021UFDE-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2021UFDE-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2021UFDE-13 reliable?
The price and inventory of DMP2021UFDE-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2021UFDE-13 is usually 5 days.
3.What payment methods are accepted for DMP2021UFDE-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2021UFDE-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2021UFDE-13?
DMP2021UFDE-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2021UFDE-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2021UFDE-13?
For technical support, including DMP2021UFDE-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2021UFDE-13 requirements.
6.How does Aetrix verify that DMP2021UFDE-13 is sourced from the original manufacturer or authorized distributors?
All DMP2021UFDE-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2021UFDE-13 meets industry standards.
7.What is the process for return or replacement of DMP2021UFDE-13?
All DMP2021UFDE-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2021UFDE-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2021UFDE-13 part is unused and in its original packaging.
Return procedure for DMP2021UFDE-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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