My Inquiry
My Account
Diodes Incorporated DMP2021UFDF-13
- Part No.:
- DMP2021UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP2021UFDF-13.pdf
- Description:
- MOSFET P-CH 20V 9A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,051
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMP2021UFDF-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring -20V V(BR)DSS, 16mΩ RDS(ON) @ VGS = -4.5V, and -9.0A continuous drain current at TA = +25°C. It serves as a low-side load switch or synchronous rectifier in compact DC-DC converters and battery protection circuits.
For engineers reviewing the DMP2021UFDF-13 datasheet, DMP2021UFDF-13 pinout, DMP2021UFDF-13 application, or DMP2021UFDF-13 equivalent, key selection criteria include gate threshold voltage (-0.35V to -1.0V), thermal resistance (63°C/W with 1-inch copper pad), ESD-protected gate, U-DFN2020-6 footprint compatibility, and JEDEC-qualified reliability for industrial power systems.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining fast switching performance, with 34nC total gate charge at VGS = -4.5V and 125ns turn-off delay time under standard test conditions. Its body diode exhibits 48ns reverse recovery time and 33nC Qrr, supporting efficient synchronous rectification.
The device operates across -55°C to +150°C junction temperature range and is rated for ±8V gate-source voltage. Thermal design leverages its 18°C/W junction-to-case resistance and 63°C/W junction-to-ambient (with enhanced copper layout), enabling stable operation in space-constrained, thermally demanding applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -20V - Maximum blocking voltage before avalanche conduction; defines safe operating range in 12V/15V rail switching. |
| RDS(ON) | 16mΩ @ VGS = -4.5V - Enables <150mW conduction loss at 9A, critical for thermal budget in portable power stages. |
| ID max | -9.0A @ TA = +25°C - Continuous current rating with standard PCB layout; derates to -7.2A at +70°C ambient. |
| Qg | 34nC @ VGS = -4.5V - Determines gate drive energy and switching speed; supports >1MHz operation with low driver loss. |
| RθJA | 63°C/W (with 1-inch copper pad) - Enables 2.02W power dissipation at +25°C ambient; guides heatsinking requirements. |
| VGS(th) | -0.35V to -1.0V - Ensures reliable turn-on with low-voltage logic (e.g., 1.8V/3.3V GPIO), reducing need for level-shifting. |
| Ciss | 2760pF - Input capacitance affecting gate drive loop stability and Miller effect in high-frequency switching. |
Pinout & Package
Package: U-DFN2020-6 (2.0mm × 2.0mm × 0.6mm profile), molded green compound, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top-left corner marker) | Source (S) | Main current return path; tied to ground or low-side reference; electrically connected to exposed thermal pad. |
| Pin 2 | Gate (G) | Control terminal; ESD-protected; requires <1.0V overdrive for full enhancement due to low VGS(th). |
| Pin 3 | Drain (D) | High-side connection point; carries full load current; electrically isolated from thermal pad. |
| Pin 4 | Source (S) | Redundant source connection; improves current sharing and thermal conduction to PCB copper. |
| Pin 5 | Drain (D) | Redundant drain connection; reduces package inductance in high-di/dt switching paths. |
| Pin 6 | Source (S) | Third source terminal; enhances thermal transfer to PCB and lowers effective RDS(ON) via parallel conduction. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6mm profile | Enables use in ultra-thin devices (e.g., wearables, slim adapters) without compromising thermal or electrical performance. |
| 4mm² PCB footprint | Reduces board area by >50% vs. SO-8 or TSOP-6 packages, supporting high-density power module integration. |
| ESD-protected gate | HBM rating ≥2kV per JESD22-A114; eliminates need for external gate protection in automated assembly environments. |
| Low RDS(ON) × Qg figure of merit | ~543 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 500kHz–2MHz DC-DC topologies. |
| JEDEC-qualified reliability | Qualified to AEC-Q101 stress test standards; suitable for industrial-grade power systems requiring long-term field stability. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Sink |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side protection switch controlled by battery management IC; responds within microseconds to fault signals. Use Value: 16mΩ RDS(ON) limits voltage drop to <150mV at 9A, preserving battery runtime and minimizing thermal rise in sealed enclosures. | Use Scenario: Input power path control in portable USB-C PD receivers (e.g., power banks, monitors). IC Role / Device Role / Timing Role: Load switch enabling/disabling VBUS connection; coordinated with PD controller via GPIO. Use Value: -1.0V VGS(th) ensures full turn-on with 3.3V logic, eliminating external level shifters and reducing BOM count. |
| Point-of-Load DC-DC Converter | Industrial Sensor Node Power Rail |
Use Scenario: Synchronous rectifier in 3.3V/5V buck converter supplying FPGA or microcontroller core rails. IC Role / Device Role / Timing Role: High-side or low-side synchronous FET; commutated at 1MHz with gate driver IC. Use Value: 34nC Qg and 220pF Crss minimize switching loss and cross-conduction risk, improving efficiency by 2.1% at 5A load. | Use Scenario: Always-on power switch for wireless sensor nodes powered by coin-cell or energy harvesters. IC Role / Device Role / Timing Role: Ultra-low-quiescent-load enable switch; biased in linear region for precise current limiting. Use Value: Sub-1V gate threshold enables direct control from nanopower supervisor ICs, extending shelf life beyond 10 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305U-7 | RDS(ON) = 48mΩ @ VGS = -4.5V; higher on-resistance; same U-DFN2020-6 package. | Higher conduction loss limits use to ≤3A loads; less suitable for high-current battery switches. | Select when cost sensitivity outweighs efficiency needs and thermal margin permits higher RDS(ON). |
| SI2301BDS-T1-GE3 | RDS(ON) = 115mΩ @ VGS = -4.5V; larger die size but lower gate charge (12nC); SOT-23 package. | Lower Qg eases gate drive but higher RDS(ON) increases heat generation; incompatible footprint. | Choose for space-tolerant designs where gate drive simplicity and legacy SOT-23 layout reuse are priorities. |
Compared with DMG2305U-7 and SI2301BDS-T1-GE3, DMP2021UFDF-13 delivers the lowest RDS(ON) in the U-DFN2020-6 form factor, enabling higher current density and better thermal performance in thermally constrained layouts-critical for next-gen portable and IoT power stages.
Availability
DMP2021UFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery sinks, and point-of-load DC-DC converters requiring stable component supply, JEDEC-qualified reliability, and compact thermal management.
Supply support for DMP2021UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, space-constrained power switching applications-including portable electronics, industrial controls, and automotive subsystems-where low RDS(ON), fast switching, and robust packaging are essential.
FAQ
What is the maximum continuous drain current for DMP2021UFDF-13 at +70°C ambient?
The maximum continuous drain current is -7.2A at TA = +70°C with standard FR-4 PCB layout (2oz copper, minimum pad). With enhanced thermal layout (1-inch square copper pad), it rises to -8.9A under the same ambient condition, per datasheet Note 6.
Does DMP2021UFDF-13 require external gate resistors for typical 1MHz switching?
No external gate resistor is required for basic turn-on/turn-off control at 1MHz, given its 16Ω typical gate resistance and 34nC gate charge. However, a 2–5Ω series resistor is recommended to dampen ringing caused by PCB trace inductance and prevent gate oscillation in high-noise environments.
Is the thermal pad on the U-DFN2020-6 package electrically connected to any terminal?
Yes-the exposed thermal pad is internally connected to the Source (S) terminals (Pins 1, 4, and 6). It must be soldered to a PCB copper pour tied to the system ground or source net to ensure both thermal performance and electrical integrity.
Can DMP2021UFDF-13 be used in automotive applications?
The DMP2021UFDF-13 is not AEC-Q101 qualified. For automotive use, Diodes offers the pin-compatible DMP2021UFDFQ-13 (Q-suffix), which is AEC-Q101 qualified, PPAP-capable, and manufactured in IATF 16949-certified facilities-listed in their automotive product catalog.
DMP2021UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 59 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2760 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 730mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMP2021UFDF-13 FAQ
1.How can I place an order for DMP2021UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2021UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2021UFDF-13 reliable?
The price and inventory of DMP2021UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2021UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMP2021UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2021UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2021UFDF-13?
DMP2021UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2021UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2021UFDF-13?
For technical support, including DMP2021UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2021UFDF-13 requirements.
6.How does Aetrix verify that DMP2021UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMP2021UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2021UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMP2021UFDF-13?
All DMP2021UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2021UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2021UFDF-13 part is unused and in its original packaging.
Return procedure for DMP2021UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMP2021UFDF-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
