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Diodes Incorporated DMP2021UTS-13
- Part No.:
- DMP2021UTS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
DMP2021UTS-13.pdf
- Description:
- MOSFET P-CH 20V 18A 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,418
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Product details
Overview
DMP2021UTS-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in TSSOP-8 package, rated for -20V VDSS, 16mΩ RDS(ON) @ VGS = -4.5V, and -18A continuous drain current at TC = +25°C. It delivers low gate threshold (-1.0V max), ESD-protected gate, and AEC-Q101 qualification - deployed in battery management and synchronous buck converter high-side switches.
For engineers reviewing the DMP2021UTS-13 datasheet, DMP2021UTS-13 pinout, DMP2021UTS-13 application, or DMP2021UTS-13 equivalent, key selection criteria include verified RDS(ON) at low VGS, thermal resistance (RθJA = 95°C/W with copper pad), SOA compliance under pulsed load, and automotive-grade reliability validation.
Technical Context
This MOSFET operates as a normally-off P-channel switch with gate threshold voltage ranging from -0.35V to -1.0V, enabling direct interface with 1.8V/2.5V logic controllers. Its low RDS(ON) at VGS = -2.5V (22mΩ) supports efficient operation in space-constrained DC-DC converters where gate drive voltage headroom is limited.
The integrated body diode exhibits VSD = -0.8V to -1.2V at -1.0A, with QRR = 33nC and tRR = 48ns - critical for minimizing shoot-through loss in synchronous rectification. Thermal design is enabled by RθJC = 16°C/W and validated junction temperature range of -55°C to +150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Maximum blocking voltage in high-side switch configuration without avalanche stress. |
| RDS(ON) @ VGS = -4.5V | 16mΩ max - Enables ≤75mW conduction loss at 4.5A, supporting thermally constrained PCB layouts. |
| ID continuous @ TC = +25°C | -18A - Validated current rating with 1-inch² copper thermal pad, defining maximum steady-state power delivery. |
| VGS(TH) | -0.35V to -1.0V - Ensures turn-on with 1.8V logic-level gate drivers and stable operation across temperature. |
| Qg @ VGS = -4.5V | 34nC - Determines gate drive power requirement and switching speed in PWM applications up to 1MHz. |
| RθJA (with copper pad) | 95°C/W - Specifies thermal rise per watt dissipated when mounted on FR-4 with enhanced copper area. |
| EAS | 32mJ - Energy-handling capability during inductive switching events, supporting robustness in motor drive H-bridges. |
Pinout & Package
Package: TSSOP-8, surface-mount, lead-free, halogen-free, RoHS-compliant molded plastic case (UL 94V-0). Weight: 0.039g. Moisture sensitivity level: J-STD-020 Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level negative voltage to enable channel conduction; ESD-protected. |
| 2 (S) | Source | Reference node for gate drive; tied to higher potential in high-side configuration; hosts body diode anode. |
| 3 (D) | Drain | Power output node; connected to load or input rail; handles full switched current and avalanche energy. |
| 4 (D) | Drain | Parallel drain connection for reduced current density and thermal resistance in high-current paths. |
| 5 (D) | Drain | Additional parallel drain terminal to support -18A continuous current with lower IR drop. |
| 6 (D) | Drain | Fourth drain terminal enhancing thermal and electrical performance in high-power switching nodes. |
| 7 (S) | Source | Secondary source connection improving current sharing and reducing bond wire inductance. |
| 8 (S) | Source | Third source terminal ensuring low-impedance return path for gate drive and body diode current. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) down to -0.35V enables reliable turn-on with 1.8V microcontroller I/O without level shifting. |
| Ultra-low RDS(ON) at low VGS | 22mΩ @ VGS = -2.5V reduces conduction loss in battery-powered systems with limited gate drive voltage. |
| ESD-protected gate | HBM rating ≥2kV ensures robustness against handling and board-level ESD events during assembly and test. |
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics requiring high-reliability MOSFETs. |
| Thermally optimized TSSOP-8 | Four drain and three source pins reduce package resistance and improve heat spreading to PCB copper. |
Applications
| Battery Protection Circuit | Synchronous Buck Converter High-Side Switch |
|---|---|
|
Use Scenario: Reverse polarity and overcurrent protection in portable medical devices using single-cell Li-ion batteries. IC Role / Device Role: P-channel high-side switch controlling battery connection to system load; blocks reverse current via body diode orientation. Use Value: 16mΩ RDS(ON) limits voltage drop to <80mV at 5A, preserving battery runtime and enabling accurate fuel gauging. |
Use Scenario: 5V-to-1.2V point-of-load conversion in FPGA power supplies with 3A output current. IC Role / Device Role: High-side synchronous rectifier in buck topology, driven by dedicated gate controller. Use Value: 34nC total gate charge allows clean 500kHz switching with <1.5W gate drive loss, improving overall efficiency by 1.2%. |
| Automotive Body Control Module (BCM) | USB-C Power Delivery Load Switch |
|
Use Scenario: 12V load switching for LED lighting and window motor control in AEC-Q101-compliant BCM designs. IC Role / Device Role: High-side power switch with integrated fault reporting via VGS monitoring. Use Value: -20V VDSS withstands load dump transients up to ISO 7637-2 Pulse 5a, eliminating need for external TVS. |
Use Scenario: Input power switch for USB-C PD sink applications requiring 20V tolerance and fast enable/disable. IC Role / Device Role: Hot-swap MOSFET managing inrush current and reverse-blocking between adapter and device. Use Value: Low VGS(TH) ensures full turn-on at 3.3V enable signal, while 32mJ EAS absorbs capacitive inrush energy safely. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305U-7 | RDS(ON) = 42mΩ @ VGS = -4.5V; smaller SOT-23 package; no AEC-Q101 qualification. | Limited to low-current (<3A), non-automotive applications due to higher on-resistance and thermal resistance. | Select only for cost-sensitive, low-power consumer designs where board space is critical and automotive qualification is unnecessary. |
| SI2301BDS-T1-GE3 | RDS(ON) = 115mΩ @ VGS = -2.5V; SOT-23-3; lacks ESD protection and AEC-Q101 rating. | Suitable for basic on/off switching below 1A; not viable for synchronous rectification or high-efficiency DC-DC. | Use only for simple load switching where efficiency and reliability requirements are minimal and gate drive voltage exceeds -4.5V. |
Compared with DMG2305U-7 and SI2301BDS-T1-GE3, DMP2021UTS-13 provides 2.6× lower RDS(ON) at -2.5V, 4× higher current rating, and automotive-grade reliability - making it uniquely suited for high-density, high-efficiency power rails in industrial and automotive systems.
Availability
DMP2021UTS-13 is available at Aetrix Electronics and suitable for battery management systems, synchronous buck converters, and automotive body control modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for DMP2021UTS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management and signal integrity applications.
DMP2021UTS belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered for high-efficiency, thermally robust switching in space-constrained 12V/24V automotive and industrial power systems.
FAQ
What is the maximum safe operating junction temperature for DMP2021UTS-13?
The absolute maximum junction temperature is +150°C, validated across all operating conditions per the datasheet. Derating begins above +125°C ambient when mounted on a standard FR-4 board with 1-inch² copper; sustained operation above TJ = +135°C requires active cooling or reduced power cycling.
Can DMP2021UTS-13 be used in synchronous rectification without an external gate driver?
No - its gate threshold is too low (-0.35V min) for direct logic-level control in synchronous rectification; a dedicated gate driver with negative turn-off capability (e.g., TC4427 configured for bipolar output) is required to ensure clean, fast turn-off and prevent shoot-through in buck converters.
Does DMP2021UTS-13 have integrated gate protection beyond ESD?
Yes - the device includes a built-in gate protection diode (shown in the equivalent circuit diagram) that clamps transient gate-source voltage to ±10V, preventing damage from overshoot during fast switching or inductive coupling in noisy automotive environments.
How does the TSSOP-8 package's thermal performance compare to SO-8 for this MOSFET?
TSSOP-8 achieves RθJA = 95°C/W with a 1-inch² copper pad - 25% better than typical SO-8 (≈125°C/W) due to thinner mold compound and shorter thermal path to PCB; however, SO-8 offers higher creepage/clearance for >50V isolation-critical designs.
DMP2021UTS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 59 nC @ 8 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2760 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
DMP2021UTS-13 FAQ
1.How can I place an order for DMP2021UTS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2021UTS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2021UTS-13 reliable?
The price and inventory of DMP2021UTS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2021UTS-13 is usually 5 days.
3.What payment methods are accepted for DMP2021UTS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2021UTS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2021UTS-13?
DMP2021UTS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2021UTS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2021UTS-13?
For technical support, including DMP2021UTS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2021UTS-13 requirements.
6.How does Aetrix verify that DMP2021UTS-13 is sourced from the original manufacturer or authorized distributors?
All DMP2021UTS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2021UTS-13 meets industry standards.
7.What is the process for return or replacement of DMP2021UTS-13?
All DMP2021UTS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2021UTS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2021UTS-13 part is unused and in its original packaging.
Return procedure for DMP2021UTS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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