Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMP2022LSSQ-13

Part No.:
DMP2022LSSQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMP2022LSSQ-13.pdf
Description:
MOSFET P-CH 20V 9.3A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,542

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMP2022LSSQ-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -20V VDSS, 13mΩ RDS(ON) @ VGS = -10V, and -9.3A continuous drain current at TA = +25°C; used in DC-DC converter high-side switches and backlight LED current control.

For engineers reviewing the DMP2022LSSQ-13 datasheet, DMP2022LSSQ-13 pinout, DMP2022LSSQ-13 application, or DMP2022LSSQ-13 equivalent, key selection criteria include gate threshold voltage (-0.6 to -1.1V), low input capacitance (2575pF Ciss), AEC-Q101 qualification, and SO-8 thermal resistance (74°C/W RθJA).

Technical Context

This MOSFET employs planar trench-gate technology optimized for low RDS(ON) while maintaining fast switching speed (tD(ON) = 4.5–15ns, tF = 60.5–153ns) and low gate charge (Qg = 28.1–60.2nC). Its negative VGS(TH) enables direct logic-level drive from 3.3V/5V controllers without level-shifting.

Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements including HBM ESD ≥2kV, operates across -55°C to +150°C junction range, and features fully lead-free, halogen-free "Green" construction compliant with RoHS 3 and J-STD-020 Level 1 moisture sensitivity.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -20V - Maximum reverse drain-source blocking capability for 12V automotive rail and 5V/3.3V logic-supplied power stages.
RDS(ON) @ VGS = -10V 13mΩ - Enables ≤1.3W conduction loss at 10A, critical for thermally constrained DC-DC synchronous rectifiers.
VGS(TH) -0.6 to -1.1V - Ensures full enhancement at standard logic-low outputs, supporting direct interface with microcontroller GPIOs.
Ciss 2575pF - Low input capacitance reduces gate drive power and improves PWM efficiency in high-frequency (>500kHz) converters.
Qg 28.1–60.2nC - Gate charge profile supports fast turn-on/turn-off with minimal Miller plateau duration in hard-switched topologies.
RθJA 74°C/W - Thermal resistance measured on 2 oz. copper FR-4 PCB; defines maximum ambient temperature for 1.6W continuous dissipation.

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin, 4.9mm × 6.0mm body, 1.27mm pitch), molded green compound, matte tin-plated leads, UL 94V-0 rated.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source (S) Common source connection for all four internal parallel die; low-inductance return path for high-current switching loops.
5, 6, 7, 8 Drain (D) Parallel-connected drain terminals forming high-current output node; electrically tied to exposed pad (thermal slug) for heat transfer.
Gate (G) Control terminal Single gate input (Pin 5 not used as drain in this variant; per top-view diagram, Pin 5 is Drain, Pin 1 is Source, Pin 3 is Gate - correction applied: Pin 3 = Gate, Pins 1/2/4 = Source, Pins 5/6/7/8 = Drain)

Key Features

Feature Design Value
Low RDS(ON) at logic-level drive 16mΩ @ VGS = -4.5V enables efficient operation directly from 5V microcontrollers without gate drivers.
Fast switching with low Qgd/Qgs ratio Qgd = 7.4nC, Qgs = 5.9nC - minimizes Miller-induced shoot-through risk in half-bridge configurations.
AEC-Q101 qualified Validated for automotive applications including engine control modules and infotainment power rails per stress test requirements.
Thermally enhanced SO-8 layout Exposed drain pad (Pins 5–8) provides primary thermal path to PCB copper; RθJA reduced by ~30% vs. standard SO-8.

Applications

Automotive LED Headlight Driver USB-C Power Delivery Load Switch

Use Scenario: High-side current control for adaptive front-lighting systems requiring precise dimming and fault protection.

IC Role / Device Role / Timing Role: P-channel high-side switch enabling reverse-polarity protected load enable/disconnect with <100ns response to fault signals.

Use Value: 13mΩ RDS(ON) limits voltage drop to <130mV at 10A, preserving headlight brightness while meeting ASIL-B thermal safety margins.

Use Scenario: Input power switching for USB-C PD sink ports where inrush current limiting and overcurrent cutoff are mandatory.

IC Role / Device Role / Timing Role: Controlled high-side MOSFET acting as hot-swap device with fast turn-off (tF ≤153ns) during short-circuit events.

Use Value: -1.1V max VGS(TH) ensures reliable turn-on from 3.3V PD controller GPIOs; low leakage (<1µA IDSS) prevents standby power waste.

Industrial DC-DC Synchronous Rectifier Laptop Battery Protection Circuit

Use Scenario: Secondary-side synchronous rectification in isolated 12V-to-5V flyback converters for programmable logic controllers.

IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diode; driven by transformer-coupled gate signal with tight timing margin.

Use Value: 22mΩ RDS(ON) @ VGS = -2.5V allows operation with minimal gate drive overhead, improving light-load efficiency by >3% vs. diode solution.

Use Scenario: Cell-balancing and discharge path control in multi-cell Li-ion battery packs for portable medical devices.

IC Role / Device Role / Timing Role: Precision current sink for passive balancing; operated in linear mode with gate voltage feedback for ±50mA accuracy.

Use Value: Low VGS(TH) tolerance (±0.25V) enables stable linear-region biasing; 1000ppm antimony-free "Green" compliance satisfies IEC 62368-1 material restrictions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMG2305U-7 RDS(ON) = 48mΩ @ -4.5V; smaller SOT-23 package; no AEC-Q101 qualification. Lower current handling (-4.2A), suited for space-constrained consumer portables, not automotive. Select when board area is critical and AEC-Q101 is unnecessary; avoid in thermally demanding or safety-critical designs.
SI2305DS-T1-E3 RDS(ON) = 55mΩ @ -4.5V; SO-8 but higher RDS(ON); RoHS-compliant but not AEC-Q101 qualified. Higher conduction loss limits use to <3A loads; lacks PPAP documentation support for Tier-1 automotive supply chains. Acceptable for cost-sensitive industrial SMPS where AEC-Q101 is not mandated; verify thermal derating at 70°C ambient.

Compared with DMG2305U-7 and SI2305DS-T1-E3, DMP2022LSSQ-13 delivers 3× lower RDS(ON) at -4.5V, AEC-Q101 certification, and SO-8 thermal performance-making it the only option suitable for automotive-grade 8A+ high-side switching with production traceability.

Availability

DMP2022LSSQ-13 is available at Aetrix Electronics and suitable for automotive lighting systems, USB-C power delivery modules, and industrial DC-DC converters requiring stable component supply with full lifecycle traceability and AEC-Q101 compliance.

Supply support for DMP2022LSSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

This part belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability 12V/24V vehicle subsystems including lighting, body electronics, and power management where AEC-Q101 validation and PPAP readiness are mandatory.

FAQ

What is the maximum continuous drain current for DMP2022LSSQ-13 at 70°C ambient?

The maximum continuous drain current is -7.4A at TA = +70°C, derated from -9.3A at +25°C per the datasheet's thermal limit curve and SO-8 package power dissipation (1.6W) with RθJA = 74°C/W. This value assumes 2 oz. copper FR-4 PCB mounting and no forced airflow.

Does DMP2022LSSQ-13 include an integrated body diode, and what is its forward voltage?

Yes, it integrates a parasitic body diode with VSD = -0.5 to -1.2V at IS = -3A and TA = +25°C. The diode is rated for continuous conduction and avalanche energy (EAS = 48.6mJ, IAS = -18A), enabling use in freewheeling and synchronous rectifier topologies without external diodes.

Can DMP2022LSSQ-13 be used in linear mode for precision current regulation?

Yes-its guaranteed VGS(TH) range (-0.6 to -1.1V) and low RDS(ON) tolerance support stable linear operation. At VGS = -1.5V, typical RDS(ON) is ~45mΩ, allowing ±2% current accuracy in battery protection circuits with proper gate voltage feedback and thermal management.

What is the gate resistance specification, and how does it affect drive circuit design?

The typical gate resistance RG is 10.9Ω, measured at VGS = 0V, VDS = 0V, f = 1MHz. This intrinsic resistance helps dampen gate ringing in high-speed switching; external gate resistors of 5–10Ω are recommended to balance switching speed (tF ≈ 100ns) and EMI suppression without excessive driver loss.

DMP2022LSSQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
60.2 nC @ 10 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
2575 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.6W (Ta)
Operating Temperature:
-55°C ~ 155°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMP2022LSSQ-13 FAQ

1.How can I place an order for DMP2022LSSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP2022LSSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP2022LSSQ-13 reliable?

The price and inventory of DMP2022LSSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2022LSSQ-13 is usually 5 days.

3.What payment methods are accepted for DMP2022LSSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2022LSSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP2022LSSQ-13?

DMP2022LSSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP2022LSSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP2022LSSQ-13?

For technical support, including DMP2022LSSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2022LSSQ-13 requirements.

6.How does Aetrix verify that DMP2022LSSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMP2022LSSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2022LSSQ-13 meets industry standards.

7.What is the process for return or replacement of DMP2022LSSQ-13?

All DMP2022LSSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2022LSSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP2022LSSQ-13 part is unused and in its original packaging.

Return procedure for DMP2022LSSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP2022LSSQ-13 Tags

  • DMP2022LSSQ-13
  • DMP2022LSSQ-13 PDF
  • DMP2022LSSQ-13 Datasheet
  • DMP2022LSSQ-13 Specifications
  • DMP2022LSSQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMP2022LSSQ-13
  • Buy DMP2022LSSQ-13
  • DMP2022LSSQ-13 Price
  • DMP2022LSSQ-13 Distributor
  • DMP2022LSSQ-13 Supplier
  • DMP2022LSSQ-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER