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Diodes Incorporated DMP2023UFDF-13
- Part No.:
- DMP2023UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP2023UFDF-13.pdf
- Description:
- MOSFET P-CH 20V 7.6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,313
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Product details
Overview
DMP2023UFDF from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in a U-DFN2020-6 package, optimized for low RDS(ON) and fast switching in compact power management circuits. It delivers 27 mΩ @ VGS = −4.5 V, −7.6 A continuous drain current at +25°C, and operates across −55°C to +150°C junction temperature range - ideal for space-constrained DC-DC converter high-side switches.
For engineers reviewing the DMP2023UFDF datasheet, DMP2023UFDF pinout, DMP2023UFDF application, or DMP2023UFDF equivalent, key selection criteria include gate threshold voltage (−0.4 to −1.0 V), thermal resistance (62 °C/W under optimized layout), and low-profile 0.6 mm height - critical for battery-powered portable electronics and automotive body control modules requiring AEC-Q101-compliant discrete solutions.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining robust avalanche capability (23 A IAS, 27 mJ EAS) and fast dynamic performance (Qg = 27 nC, tF = 77.3 ns). Its −1.5 V gate threshold enables direct logic-level drive from 1.8 V/3.3 V microcontrollers without level-shifting.
The device integrates an intrinsic body diode with VSD = −0.8 to −1.2 V at −1.0 A, supporting synchronous rectification and reverse-current blocking in buck converters and load-switch applications. Thermal design is enabled by its 9.3 °C/W RθJC and validated FR-4 PCB layout with 2 oz copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V - Supports input rails up to 18 V with 10% derating for reliability in automotive and industrial 12 V systems. |
| RDS(ON) | 27 mΩ @ VGS = −4.5 V - Enables <150 mW conduction loss at 7 A, critical for >95% efficiency in 5 V–12 V point-of-load converters. |
| ID (continuous) | −7.6 A @ TA = +25°C - Sustains full-rated current in thermally optimized layouts using minimum pad area per datasheet recommendation. |
| Qg | 27 nC - Low gate charge reduces driver power consumption and enables efficient operation at 500 kHz–1 MHz switching frequencies. |
| RθJA | 62 °C/W (optimized layout) - Allows 2.03 W power dissipation at +25°C ambient, enabling use without heatsink in handheld devices. |
| VGS(TH) | −0.4 to −1.0 V - Ensures turn-on with standard 1.8 V GPIOs and eliminates need for external gate bias in ultra-low-voltage systems. |
| Ciss | 1837 pF - Predictable input capacitance supports stable gate-drive loop design and minimizes EMI during hard switching. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 mm × 2.0 mm × 0.6 mm, bottom-exposed thermal pad, RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Primary current return path; connected to ground or low-side rail in high-side switch configuration. |
| Pin 2 (Gate) | Gate terminal (G) | Control input; requires <1.0 V negative swing relative to source to fully enhance; low Ciss eases drive design. |
| Pin 3 (Drain) | Drain terminal (D) | High-side power output node; handles full load current and must be routed with low-inductance layout for switching integrity. |
| Pin 4 (Source) | Source terminal (S) | Second source connection - paralleled with Pin 1 to reduce package resistance and improve thermal conduction to PCB. |
| Pin 5 (Drain) | Drain terminal (D) | Second drain connection - paralleled with Pin 3 to lower RDS(ON) contribution from bond wires and enhance current sharing. |
| Pin 6 (Thermal Pad) | Exposed thermal pad (EP) | Internally connected to source; must be soldered to large copper pour for effective heat transfer and RθJA optimization. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile 0.6 mm height | Enables integration into <1.0 mm total board thickness designs such as wearables and slim IoT sensors. |
| PCB footprint of 4 mm² | Reduces board area by >40% vs. SO-8 or TSOP-6 packages, preserving routing space in dense power modules. |
| Fast switching (tF = 77.3 ns) | Minimizes transition losses in high-frequency DC-DC stages, directly improving light-load efficiency above 300 kHz. |
| −55°C to +150°C operating range | Validates use in under-hood automotive ECUs and industrial motor drives without derating at extreme temperatures. |
| Halogen- and antimony-free "Green" construction | Meets IPC-1752A material declaration requirements and supports EU ELV and RoHS 3 compliance reporting. |
Applications
| Battery Protection Circuit | USB-C Load Switch |
|---|---|
|
Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion battery packs for portable medical devices. IC Role / Device Role / Timing Role: High-side protection switch controlled by battery fuel gauge IC via open-drain GPIO. Use Value: 27 mΩ RDS(ON) limits voltage drop to <200 mV at 7 A, preserving runtime; −1.0 V VGS(TH) ensures reliable turn-off during deep discharge. |
Use Scenario: Inrush current limiting and hot-swap control for USB-C PD power delivery ports in docking stations. IC Role / Device Role / Timing Role: Controlled high-side switch enabling soft-start and fault isolation between host and peripheral. Use Value: 27 nC Qg allows clean 100 µs turn-on using simple RC gate drive; 23 A IAS withstands transient short-circuit events without failure. |
| Automotive Body Control Module | Industrial 24 V DC-DC Converter |
|
Use Scenario: Power distribution to LED lighting and sensor clusters in AEC-Q101-qualified BCMs. IC Role / Device Role / Timing Role: High-side load switch with integrated diagnostics via current-sense resistor feedback. Use Value: 0.6 mm profile fits beneath connectors; 150°C TJ(max) supports operation near engine bay heat sources without thermal throttling. |
Use Scenario: Synchronous rectifier in isolated flyback or forward converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: Secondary-side synchronous MOSFET replacing Schottky diode to improve efficiency and reduce thermal stress. Use Value: 1837 pF Ciss and 115 pF Crss enable precise timing alignment with primary-side controller; low RDS(ON) cuts conduction loss by 40% vs. 40 V diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(ON) = 42 mΩ @ −4.5 V; larger U-DFN2020-6 footprint but identical pinout; higher gate charge (32 nC). | Suitable for cost-sensitive consumer applications where 15 mΩ higher RDS(ON) is acceptable for 10% lower BOM cost. | Select when thermal margin exceeds 20°C and gate drive strength is limited - higher Qg demands stronger driver. |
| SI2301DDS-T1-GE3 | RDS(ON) = 115 mΩ @ −4.5 V; same U-DFN2020-6 package; lower VDSS (−20 V) but significantly higher on-resistance. | Targeted at low-power always-on functions (e.g., RTC backup switching) where <100 mA loads dominate. | Choose only for sub-1 A loads - its 115 mΩ causes >115 mW loss at 1 A, making it unsuitable for ≥3 A applications. |
Compared with DMG2305UVT-7 and SI2301DDS-T1-GE3, DMP2023UFDF provides the lowest RDS(ON) and highest current capability in the U-DFN2020-6 footprint, delivering superior thermal performance and efficiency in 5–7 A power rails where conduction loss dominates system budget.
Availability
DMP2023UFDF is available at Aetrix Electronics and suitable for battery management systems, USB-C load switching, and automotive body control modules requiring stable component supply and long-term lifecycle support.
Supply support for DMP2023UFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for industrial, computing, and automotive markets.
DMP2023UFDF belongs to Diodes' U-DFN low-RDS(ON) MOSFET product line, engineered specifically for space-constrained, high-current DC-DC conversion and load-switching applications demanding minimal voltage drop and fast transient response.
FAQ
What is the maximum safe operating junction temperature for DMP2023UFDF?
The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation across −55°C to +150°C. Derating begins at +70°C ambient for the 0.73 W steady-state power rating; however, with optimized PCB layout (2 oz copper, thermal pad soldered), it sustains 2.03 W at +25°C ambient per datasheet Note 5.
Can DMP2023UFDF be used in automotive applications?
Yes - DMP2023UFDF is manufactured in IATF 16949-certified facilities and meets AEC-Q101 stress-test requirements for discrete MOSFETs. While not pre-qualified as "AEC-Q101 qualified" in its standard marking, Diodes confirms qualification capability upon request for PPAP-compliant automotive programs.
How does the U-DFN2020-6 thermal pad affect PCB layout?
The exposed thermal pad (Pin 6) is internally connected to the source and must be soldered to a minimum 4 mm² copper pour with ≥4 thermal vias (0.3 mm diameter) to inner ground layers. Omitting this reduces RθJA from 62 °C/W to 171 °C/W, risking thermal shutdown at >0.5 W dissipation.
Is gate resistive damping required for stable switching?
A 5–10 Ω series gate resistor is recommended to suppress ringing caused by Lg–Ciss resonance, especially when driving from low-impedance sources. The device's 14.8 Ω intrinsic gate resistance helps dampen oscillations, but external damping improves EMI performance and prevents false turn-on during high dv/dt events.
DMP2023UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1837 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 730mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMP2023UFDF-13 FAQ
1.How can I place an order for DMP2023UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2023UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2023UFDF-13 reliable?
The price and inventory of DMP2023UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2023UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMP2023UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2023UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2023UFDF-13?
DMP2023UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2023UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2023UFDF-13?
For technical support, including DMP2023UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2023UFDF-13 requirements.
6.How does Aetrix verify that DMP2023UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMP2023UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2023UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMP2023UFDF-13?
All DMP2023UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2023UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2023UFDF-13 part is unused and in its original packaging.
Return procedure for DMP2023UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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