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Diodes Incorporated DMP2035UFDF-13
- Part No.:
- DMP2035UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP2035UFDF-13.pdf
- Description:
- MOSFET P-CH 20V 8.1A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,151
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Product details
Overview
DMP2035UFDF from Diodes Incorporated is a P-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 29 mΩ RDS(ON) at VGS = −4.5 V, −20 V VDSS, and −6.9 A continuous drain current at TA = +25°C. It is used in battery management systems and DC-DC converters where low-profile, low-RDS(ON) switching is critical.
For engineers reviewing the DMP2035UFDF datasheet, DMP2035UFDF pinout, DMP2035UFDF application, or DMP2035UFDF equivalent, key selection criteria include gate threshold voltage (−0.4 to −1.0 V), thermal resistance (63 °C/W under enhanced layout), ESD-protected gate, and U-DFN2020-6 package compatibility with space-constrained PCB layouts.
Technical Context
This MOSFET employs a trench-gate structure to achieve low on-resistance while maintaining fast switching performance. Its −1.0 V maximum VGS(TH) enables reliable turn-on with low-voltage control logic, and its integrated source-drain diode supports synchronous rectification in buck converters.
The device is rated for −20 V VDSS and ±8 V VGG, with dynamic parameters including 20.5 nC total gate charge and 117 pF Crss-enabling efficient operation in 500 kHz–1 MHz DC-DC topologies. Thermal design is supported by validated RθJA = 63 °C/W under 1-inch² copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V - Withstands up to −20 V drain-source voltage, suitable for 12 V rail and Li-ion battery systems. |
| RDS(ON) | 29 mΩ @ VGS = −4.5 V - Enables <120 mW conduction loss at 2 A, reducing thermal load in compact power stages. |
| ID (continuous) | −6.9 A @ TA = +25°C - Supports medium-power load switching in portable and industrial power rails. |
| VGS(TH) | −0.4 to −1.0 V - Ensures full enhancement with standard 1.8 V/3.3 V GPIO or low-voltage PMIC outputs. |
| QG | 20.5 nC - Low gate charge reduces drive power and enables use with low-current gate drivers. |
| RθJA | 63 °C/W (with 1-inch² copper) - Allows >1 W dissipation at ≤70°C ambient without heatsink in typical layouts. |
| Ciss | 1808 pF - Predictable input capacitance simplifies gate driver sizing and loop stability analysis. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 mm × 2.0 mm × 0.6 mm, 0.65 mm pitch, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top-left corner marker) | Source | Main current return path; tied to ground or low-side reference in high-side switch configurations. |
| Pin 2 | Gate | Control terminal; requires ESD-safe handling and <±8 V drive compliance. |
| Pin 3 | Drain | High-side power input node; connects to input rail in load-switch or buck high-side applications. |
| Pin 4 | Source | Second source connection; paralleled with Pin 1 to reduce package inductance and improve current sharing. |
| Pin 5 | Drain | Second drain connection; paralleled with Pin 3 to lower RDS(ON) and thermal resistance. |
| Pin 6 (Exposed pad) | Thermal Pad / Source | Primary thermal path to PCB; must be soldered to ≥1-inch² copper pour for rated power dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile U-DFN2020-6 package | 0.6 mm height enables integration into ultra-thin devices such as wearables and slim power modules. |
| ESD-protected gate | Withstands ≥2 kV HBM per JESD22-A114, reducing risk of assembly damage and field failure. |
| Low gate threshold voltage | VGS(TH) max −1.0 V ensures robust turn-on with 1.8 V logic, eliminating need for level shifters. |
| Lead-free & halogen-free construction | Complies with RoHS 3 and JEDEC J-STD-020 Level 1, supporting green manufacturing and automotive qualification paths. |
| Optimized RDS(ON)/QG ratio | 29 mΩ / 20.5 nC = 1.42 Ω·nC - balances conduction and switching losses for high-frequency DC-DC efficiency. |
Applications
| Battery Protection Circuit | Load Switch in Portable Devices |
|---|---|
|
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-MOSFET switch controlling battery discharge path; activated only when voltage and current are within safe limits. Use Value: 29 mΩ RDS(ON) limits voltage drop to <150 mV at 5 A, preserving battery runtime and enabling accurate fuel gauging. |
Use Scenario: Controlled power-up of USB peripherals or sensors in smartphones and tablets. IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry until system firmware validates readiness. Use Value: −0.4 V min VGS(TH) allows direct GPIO control without external bias, reducing BOM count and board area. |
| DC-DC Synchronous Rectifier | Industrial Power Sequencing |
|
Use Scenario: Low-side synchronous rectifier in 3.3 V/5 V buck converters for FPGA or microcontroller core supplies. IC Role / Device Role / Timing Role: Fast-turning P-channel switch replacing Schottky diode to minimize conduction loss during freewheeling phase. Use Value: 117 pF Crss and 20.5 nC QG enable clean zero-voltage switching at 1 MHz, improving efficiency by 3–5% vs. diode solution. |
Use Scenario: Independent power-rail sequencing in programmable logic controllers and motor drives. IC Role / Device Role / Timing Role: Standalone high-side switch enabling timed activation of isolated I/O or analog subsystems. Use Value: 0.6 mm profile and 4 mm² footprint allow dense placement near connectors or isolation barriers without height interference. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(ON) = 42 mΩ @ −4.5 V; higher threshold (−1.5 V max); same U-DFN2020-6 package. | Less suitable for 1.8 V logic drive; better for higher-VGS systems where gate drive margin is ample. | Select if gate drive voltage ≥4.5 V and cost sensitivity outweighs RDS(ON) penalty. |
| Si2305DS-T1-GE3 | RDS(ON) = 48 mΩ @ −4.5 V; no ESD protection; slightly larger 2.0×2.1 mm footprint. | Lacks integrated ESD protection, requiring external TVS or layout mitigation in noisy environments. | Choose only in cost-driven, non-critical consumer applications with controlled ESD handling. |
Compared with DMG2305UVT-7 and Si2305DS-T1-GE3, DMP2035UFDF delivers the lowest RDS(ON) and guaranteed ESD protection in the smallest footprint-making it optimal for space- and efficiency-constrained 1.8 V–3.3 V control systems.
Availability
DMP2035UFDF is available at Aetrix Electronics and suitable for battery management circuits, portable device load switching, and industrial DC-DC converter designs requiring stable component supply and consistent parametric performance across production lots.
Supply support for DMP2035UFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
DMP2035UFDF belongs to Diodes' U-DFN Power MOSFET product line, engineered specifically for space-constrained, high-efficiency power switching in battery-powered and portable electronics.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMP2035UFDF supports −5.5 A continuous drain current at TA = +70°C with standard FR-4 PCB layout (2 oz copper, minimum pad), and −6.5 A with enhanced thermal layout (1-inch² copper). These values are specified in the Absolute Maximum Ratings table and validated per JEDEC test conditions.
Is the exposed thermal pad electrically connected?
Yes-the exposed pad (Pin 6) is internally connected to the Source terminal and must be soldered to a PCB copper pour tied to the system ground or source net. This connection is essential for achieving the 63 °C/W RθJA rating and preventing thermal runaway under sustained load.
Does this MOSFET require a gate resistor for stability?
A gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 117 pF) and PCB trace inductance. While not mandatory for basic switching, it improves EMI performance and prevents unintended oscillation during fast edge transitions in high-frequency DC-DC applications.
Can DMP2035UFDF replace an N-channel MOSFET in high-side switching?
No-it is a P-channel device intended for high-side switching where the source connects to the positive rail. Replacing an N-channel high-side switch would require redesigning the gate drive to provide a negative or floating bias relative to the source, as its gate must be driven below the source potential to turn on.
DMP2035UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 6.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20.5 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1808 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.03W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMP2035UFDF-13 FAQ
1.How can I place an order for DMP2035UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2035UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2035UFDF-13 reliable?
The price and inventory of DMP2035UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2035UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMP2035UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2035UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2035UFDF-13?
DMP2035UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2035UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2035UFDF-13?
For technical support, including DMP2035UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2035UFDF-13 requirements.
6.How does Aetrix verify that DMP2035UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMP2035UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2035UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMP2035UFDF-13?
All DMP2035UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2035UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2035UFDF-13 part is unused and in its original packaging.
Return procedure for DMP2035UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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