Diodes Incorporated DMP2040UVTQ-7

Overview

DMP2040UVTQ from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -20V V_DSS, 38 mΩ R_DS(ON) at V_GS = -4.5V, and -5.5A continuous drain current at T_A = +25°C; it is AEC-Q101 qualified and used in automotive DC-DC converters and motor control power stages.

For engineers reviewing the DMP2040UVTQ datasheet, DMP2040UVTQ pinout, DMP2040UVTQ application, or DMP2040UVTQ equivalent, key selection criteria include its low on-resistance at -4.5V gate drive, TSOT26 package thermal performance (R_θJA = 80 °C/W with thermal pad), and AEC-Q101 qualification for under-hood power management.

Technical Context

This MOSFET operates as a high-side load switch or synchronous rectifier in automotive 12V systems, with gate threshold voltage (V_GS(TH)) ranging from -0.6 V to -1.5 V and body diode forward voltage of -0.7 V at -2.9 A. Its low input capacitance (C_iss = 834 pF) and fast switching (t_D(ON) = 5.8 ns) support efficient PWM operation in compact DC-DC topologies.

The device features an exposed drain pad in TSOT26 for enhanced thermal conduction, enabling 1.5 W power dissipation at T_A = +25°C with 2 oz copper thermal bias. Avalanche energy rating (E_AS = 13.5 mJ) and pulsed drain current (-40 A) support robust transient handling in motor drive fault conditions.

Key Specifications

Pinout & Package

Package: TSOT26 - thermally enhanced 6-pin surface-mount package with exposed drain pad for improved heat transfer; moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMG2305UVTQ-7 and SI2301DDS-T1-GE3, DMP2040UVTQ delivers superior conduction efficiency and automotive-grade reliability-its 38 mΩ R_DS(ON) and 80 °C/W thermal resistance enable higher current density in AEC-Q101-compliant designs where thermal margin and transient robustness are critical.

Availability

DMP2040UVTQ is available at Aetrix Electronics and suitable for automotive DC-DC converters, motor control subsystems, and power management modules requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMP2040UVTQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This device belongs to Diodes' AEC-Q101-qualified automotive MOSFET portfolio, engineered specifically for high-efficiency, thermally constrained power switching in engine control units, body electronics, and ADAS subsystems.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The DMP2040UVTQ has a maximum junction temperature of +150°C. At T_A = +70°C, its continuous drain current drops to -4.5 A due to thermal derating-this reflects real-world operation on standard FR-4 PCBs with 2 oz copper thermal bias. The device's R_θJA = 80 °C/W defines the thermal bottleneck, so heatsinking or increased copper area directly extends usable current capacity.

Is the body diode suitable for freewheeling in synchronous rectification?

Yes-the body diode has V_SD = -0.7 V at -2.9 A and t_RR = 9.8 ns, making it viable for freewheeling in medium-frequency (≤500 kHz) synchronous buck converters. Its Q_RR = 2.7 nC minimizes reverse recovery loss, but external Schottky clamping may still be needed in high-dV/dt motor drive applications to suppress voltage spikes.

How does the TSOT26 package compare thermally to standard SOT-23?

The TSOT26 includes an exposed drain pad that reduces R_θJA from 105 °C/W (standard layout) to 80 °C/W (with thermal pad), a 24% improvement. Unlike SOT-23, its three drain pins and larger copper land area allow direct thermal coupling to internal PCB planes-critical for maintaining <125°C junction temperature in automotive ambient conditions up to +85°C.

What gate drive voltage is required to achieve specified R_DS(ON)?

To achieve the guaranteed 38 mΩ R_DS(ON), a V_GS of -4.5V is required. At -2.5V, R_DS(ON) rises to 52 mΩ-so gate drivers must deliver sufficient negative swing. The V_GS(TH) range (-0.6 V to -1.5 V) means logic-level compatibility is limited; dedicated gate drivers or level-shifted control signals are recommended for reliable enhancement across temperature.