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Diodes Incorporated DMP2045UFDB-13
- Part No.:
- DMP2045UFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP2045UFDB-13.pdf
- Description:
- MOSFET 2P-CH 20V 3.1A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,592
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Product details
Overview
DMP2045UFDB-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for -20V VDSS, 90mΩ RDS(ON) at VGS = -4.5V and -3.1A ID, with low input capacitance (634pF Ciss) and ESD-protected gate - deployed in portable power adaptors and load-switching circuits requiring compact, high-efficiency power control.
For engineers reviewing the DMP2045UFDB-13 datasheet, DMP2045UFDB-13 pinout, DMP2045UFDB-13 application, or DMP2045UFDB-13 equivalent, key selection criteria include dual-channel P-MOSFET integration, sub-100mΩ on-resistance at -4.5V drive, 0.6mm profile constraint, thermal resistance (RθJA = 97°C/W with copper pad), and compatibility with space-constrained DC-DC and battery-protection topologies.
Technical Context
This dual P-channel MOSFET integrates two matched, independently controllable switches sharing a common source configuration per channel (S1/G1/D1 and S2/G2/D2), enabling synchronous load switching or dual-rail power path control. Its gate threshold voltage range (-0.3V to -1.0V) supports logic-level drive from 3.3V microcontrollers without level-shifting.
The device features low dynamic parameters: 6.8nC total gate charge, 1.6nC Qgd, and fast switching (td(OFF) = 23ns), optimized for high-frequency DC-DC converter auxiliary switches and USB-C power delivery path management where body diode conduction (VSD = -0.75V) and reverse recovery (tRR = 1.8ns) impact efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Withstands up to -20V drain-source voltage, suitable for 12V and 5V rail switching with margin. |
| RDS(ON) max | 90mΩ @ VGS = -4.5V - Enables ≤280mW conduction loss at 1.75A, critical for thermally constrained PCBs. |
| ID (TA = +25°C) | -3.1A - Continuous current rating with 2oz copper pad; derates to -2.4A at +70°C ambient. |
| Ciss | 634pF - Low input capacitance reduces gate drive power and speeds turn-on in high-frequency applications. |
| Qg | 6.8nC - Total gate charge determines required driver strength and switching transition time. |
| tRR | 1.8ns - Ultra-fast body diode recovery minimizes shoot-through risk in synchronous rectification. |
| RθJA | 97°C/W - Achieved with 1-inch² copper pad; enables 1.29W power dissipation at +25°C ambient. |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm, lead-free NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side switch node for first P-MOSFET; electrically isolated from D2. |
| G1 | Gate of Channel 1 | Control input for Channel 1; ESD-protected, threshold -0.3V to -1.0V. |
| S1 | Source of Channel 1 | Reference node for Channel 1; tied to system VIN or ground depending on topology. |
| S2 | Source of Channel 2 | Reference node for Channel 2; may be shared or independent per design. |
| G2 | Gate of Channel 2 | Independent control input for Channel 2; identical electrical characteristics to G1. |
| D2 | Drain of Channel 2 | Second high-side switch node; enables dual-path or redundant load control. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile U-DFN2020-6 | 0.6mm max height enables use in ultra-thin portable electronics and stacked PCB assemblies. |
| Matched dual P-MOSFETs | Paired channels with tightly controlled RDS(ON) and VGS(TH) tracking support balanced current sharing. |
| ESD-protected gate | Withstands ≥2kV HBM ESD events, reducing need for external protection in handheld device designs. |
| Green, halogen-free construction | Meets IEC 61249-2-21 and JEDEC J-STD-020; <900ppm Br/Cl, <1000ppm Sb, RoHS 3 compliant. |
| Low thermal resistance | RθJA = 97°C/W with enhanced pad layout allows higher continuous current in compact footprints. |
Applications
| USB-C Power Delivery Switching | Smartphone Battery Protection |
|---|---|
|
Use Scenario: Dual-path power routing in USB-C receptacles supporting alternate modes and power role swapping. IC Role / Device Role / Timing Role: Dual P-MOSFET load switch controlling VBUS and CC line power paths with independent gate control. Use Value: 90mΩ RDS(ON) limits voltage drop to <120mV at 1.3A, preserving PD negotiation margins while enabling 0.6mm Z-height compliance. |
Use Scenario: Overvoltage/overcurrent protection circuit isolating main battery from charging IC and system load. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET configuration (using both channels) for bidirectional blocking and fast fault shutdown. Use Value: 1.8ns body diode recovery and 23ns td(OFF) enable sub-100ns fault response, meeting IEC 62368-1 transient isolation requirements. |
| Wireless Earbud Charging Case | IoT Sensor Node Power Management |
|
Use Scenario: Load switching between Li-ion battery and regulated 3.3V rail for Bluetooth SoC and charging circuitry. IC Role / Device Role / Timing Role: Single-channel P-MOSFET used as high-side switch; second channel reserved for auxiliary function (e.g., LED driver enable). Use Value: 4mm² footprint and 634pF Ciss allow integration into <100mm² PCB area while minimizing gate drive current demand from coin-cell–powered MCU. |
Use Scenario: Power gating of BLE radio, environmental sensors, and flash memory during deep-sleep cycles. IC Role / Device Role / Timing Role: Dual independent switches managing separate power domains (radio vs. sensor subsystem) with individual enable control. Use Value: -1.0V VGS(TH) max ensures reliable turn-on from 1.8V GPIOs; 120mΩ RDS(ON) @ -2.5V enables >95% efficiency at 500mA sleep-state loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012UVT-7 | Single P-MOSFET, 20V, 110mΩ @ -4.5V, SOT-523 (1.2×1.6mm); no dual-channel integration. | Requires two devices and extra board space to replicate dual functionality; lacks matched pair tracking. | Select when only one switch is needed or when SOT-523 mounting is mandatory. |
| SI2301CDS-T1-GE3 | Dual P-MOSFET, 20V, 115mΩ @ -4.5V, SOT-363 (2.1×2.3mm); 0.9mm height, higher RDS(ON), no ESD rating specified. | Larger footprint and taller profile limit use in ultra-thin wearables; no documented ESD protection. | Select when legacy SOT-363 assembly lines are in place and 115mΩ on-resistance is acceptable. |
Compared with DMG1012UVT-7 and SI2301CDS-T1-GE3, DMP2045UFDB-13 delivers superior space efficiency (2.0×2.0mm), lower on-resistance, guaranteed ESD protection, and matched dual-channel performance-making it optimal for next-generation portable power architectures where size, thermal density, and reliability are co-constrained.
Availability
DMP2045UFDB-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, smartphone battery protection circuits, and wireless earbud charging cases requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.
Supply support for DMP2045UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMP2045UFDB belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-density, low-voltage power switching in portable and battery-powered systems where minimal footprint, low RDS(ON), and robust gate protection are essential.
FAQ
What is the maximum junction temperature for DMP2045UFDB-13?
The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation above this temperature risks permanent device degradation. Derating curves in Figure 5 and Figure 7 confirm usable RDS(ON) performance up to 150°C, with normalized on-resistance rising to ~1.8× its 25°C value at full rating.
Can DMP2045UFDB-13 be used in a back-to-back configuration for reverse polarity protection?
Yes - both P-MOSFET channels can be wired in series source-to-source to form a bidirectional blocking switch. This configuration leverages the intrinsic body diodes to block reverse current flow in either direction, and the -20V VDSS rating provides sufficient margin for 12V automotive or industrial inputs.
Is the U-DFN2020-6 (Type B) package compatible with standard reflow profiles?
Yes - the package is qualified to J-STD-020 moisture sensitivity level 1 and supports standard Pb-free reflow profiles (peak 260°C). The NiPdAu terminal finish ensures reliable solderability per MIL-STD-202, Method 208, and the 0.6mm profile avoids tombstoning on fine-pitch layouts when using recommended pad dimensions from Diodes' package outline document.
Does DMP2045UFDB-13 meet AEC-Q101 for automotive use?
No - the datasheet explicitly states that automotive-qualified versions require AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing; DMP2045UFDB-13 is not listed as AEC-Q101 qualified. It is intended for commercial and industrial applications, not safety-critical automotive subsystems.
DMP2045UFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Ta)
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 634pF @ 10V
- Power - Max:
- 740mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMP2045UFDB-13 FAQ
1.How can I place an order for DMP2045UFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2045UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2045UFDB-13 reliable?
The price and inventory of DMP2045UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2045UFDB-13 is usually 5 days.
3.What payment methods are accepted for DMP2045UFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2045UFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2045UFDB-13?
DMP2045UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2045UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2045UFDB-13?
For technical support, including DMP2045UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2045UFDB-13 requirements.
6.How does Aetrix verify that DMP2045UFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMP2045UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2045UFDB-13 meets industry standards.
7.What is the process for return or replacement of DMP2045UFDB-13?
All DMP2045UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2045UFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2045UFDB-13 part is unused and in its original packaging.
Return procedure for DMP2045UFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMP2045UFDB-13 Tags
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