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Diodes Incorporated DMP2045UFDB-7
- Part No.:
- DMP2045UFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP2045UFDB-7.pdf
- Description:
- MOSFET 2P-CH 20V 3.1A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,592
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Product details
Overview
DMP2045UFDB-7 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for -20V VDSS, 90mΩ RDS(ON) @ VGS = -4.5V, and -3.1A continuous drain current at TA = +25°C. It serves as a compact, low-profile load switch in portable power adaptors and battery-powered systems requiring high-efficiency power path control.
For engineers reviewing the DMP2045UFDB-7 datasheet, DMP2045UFDB-7 pinout, DMP2045UFDB-7 application, or DMP2045UFDB-7 equivalent, key selection criteria include its dual-channel P-MOS topology, 0.6mm max height, 4mm² PCB footprint, low gate charge (6.8nC), and thermal resistance of 97°C/W under enhanced pad layout - all critical for space-constrained DC-DC and USB-C power delivery designs.
Technical Context
This dual P-channel MOSFET integrates two identical enhancement-mode silicon devices in a single ultra-thin 2.0×2.0mm U-DFN package with shared source terminals and independent gate/drain connections. Its gate threshold voltage range (-0.3V to -1.0V) enables reliable turn-on from low-voltage logic (e.g., 3.3V GPIO with level-shifting), while low input capacitance (634pF) supports fast switching up to 1MHz.
The device features ESD-protected gates (±10μA IGSS), a body diode with 1.8ns reverse recovery time and 9.4nC QRR, and avalanche-rated capability (11A IAS, 7mJ EAS). Thermal performance is optimized for FR-4 PCBs with 2oz copper and 1-inch² thermal pad, delivering 1.29W power dissipation at TA = +25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Maximum drain-source blocking voltage for 3.3V/5V system-level power rail isolation |
| RDS(ON) @ VGS = -4.5V | 90mΩ - Enables ≤280mW conduction loss at 1.7A load, suitable for <5W load-switch applications |
| Qg | 6.8nC - Supports efficient gate driving with standard logic-level drivers; reduces switching loss in 500kHz–1MHz DC-DC stages |
| Ciss | 634pF - Low input capacitance minimizes gate drive power and improves EMI profile in high-frequency switching |
| RθJA (enhanced pad) | 97°C/W - Allows 1.29W operation at +25°C ambient without heatsink; critical for fanless portable designs |
| tRR | 1.8ns - Ultra-fast body diode recovery enables synchronous rectification in buck converters without shoot-through risk |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm, lead-free NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain of Channel 1 | Primary high-side power path terminal; connects to input rail in load-switch configuration |
| Pin 2 (G1) | Gate of Channel 1 | Logic-controlled terminal; requires negative VGS for turn-on; compatible with 3.3V/5V level shifters |
| Pin 3 (S1/S2) | Common Source | Shared source node for both channels; ties to system ground or output return path |
| Pin 4 (G2) | Gate of Channel 2 | Independent gate for second channel; enables dual-rail or redundant switching control |
| Pin 5 (D2) | Drain of Channel 2 | Second independent power path; supports dual-load or OR-ing configurations |
| Pin 6 (exposed pad) | Thermal & Electrical Ground | Must be soldered to PCB thermal pad for RθJA = 97°C/W; electrically connected to S1/S2 |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.6mm maximum height - fits under 1mm board-to-board connectors and thin enclosures |
| Minimal PCB footprint | 4mm² area - saves >60% board space vs. SO-8 dual MOSFETs in portable power modules |
| ESD-protected gate | ±10μA IGSS leakage - withstands HBM ≥2kV without external protection circuitry |
| Low gate charge | 6.8nC total charge - reduces driver IC power consumption and enables use of low-current GPIOs |
| Halogen- and antimony-free | <900ppm Br/Cl, <1000ppm Sb - meets IPC-1752A Class 3 environmental compliance for medical and industrial end equipment |
Applications
| USB-C Power Delivery Switch | Smartphone Battery Protection |
|---|---|
|
Use Scenario: Dual-path switching between USB-C port and internal battery during charging/discharging cycles. IC Role / Device Role / Timing Role: Dual P-MOS load switch controlling power direction and isolation between VBUS and BAT rails. Use Value: 90mΩ RDS(ON) limits voltage drop to <180mV at 2A, preserving battery efficiency; 1.29W PD rating sustains full 5V/3A operation without derating. |
Use Scenario: Overvoltage/overcurrent protection circuit isolating main Li-ion cell from system loads during fault conditions. IC Role / Device Role / Timing Role: Fast-acting back-to-back P-MOS switch enabling bidirectional current blocking and reverse polarity protection. Use Value: 1.8ns tRR and 9.4nC QRR prevent cross-conduction during rapid fault shutdown; ESD-protected gates eliminate need for external TVS on gate lines. |
| Wireless Earbud Charging Case | IoT Sensor Node Power Management |
|
Use Scenario: Independent enable control of charging circuit and audio subsystem to minimize standby current. IC Role / Device Role / Timing Role: Dual-channel load switch managing separate power domains for battery charger IC and Bluetooth SoC. Use Value: 4mm² footprint allows integration into sub-20cm³ charging cases; 0.6mm height avoids interference with battery stacking and flex PCB routing. |
Use Scenario: Low-power wake-up sequencing where MCU enables sensors only during active measurement windows. IC Role / Device Role / Timing Role: Logic-controlled power gate for intermittent sensor supply, minimizing quiescent current in sleep mode. Use Value: -0.3V to -1.0V VGS(TH) ensures clean turn-on from 3.3V MCU GPIO; 10μA max IDSS keeps off-state leakage below 1μA per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2045UVT-7 | Same die, but in 1.6×1.6mm U-DFN1616-6 package; RDS(ON) = 110mΩ @ -4.5V; 0.5mm height | Higher RDS(ON) increases conduction loss by ~22%; smaller footprint trades thermal margin for density | Select when board area is more constrained than thermal budget; verify 110mΩ meets voltage-drop spec at peak load |
| SI3486DV-T1-GE3 | Single-channel P-MOS, 20V, 85mΩ @ -4.5V, SOT-23-6; no common-source configuration | Requires two devices for dual-path function; larger 2.9×2.8mm footprint; lacks integrated thermal pad | Choose only if dual-channel integration is unnecessary and legacy SOT-23 assembly is required |
Compared with DMC2045UVT-7, the DMP2045UFDB-7 delivers lower RDS(ON) and superior thermal performance via its exposed thermal pad; versus SI3486DV-T1-GE3, it provides true dual-channel integration with matched characteristics and 45% smaller area, simplifying layout and reducing BOM count.
Availability
DMP2045UFDB-7 is available at Aetrix Electronics and suitable for USB-C power delivery modules, smartphone battery management systems, wireless earbud charging cases, and IoT sensor node power sequencing requiring stable component supply across production volumes.
Supply support for DMP2045UFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The DMP2045UFDB-7 belongs to Diodes' U-DFN dual MOSFET product line, engineered specifically for space-constrained, thermally sensitive portable power applications demanding low RDS(ON), minimal footprint, and robust gate reliability.
FAQ
What is the maximum continuous drain current for each channel at +70°C ambient?
At TA = +70°C, the maximum continuous drain current per channel is -2.4A with VGS = -4.5V, based on thermal derating from the 1.29W power dissipation limit and 97°C/W RθJA. This assumes use of the recommended 1-inch² copper thermal pad on FR-4 PCB. Operation above this current requires forced air or additional copper area.
Can the DMP2045UFDB-7 be used in a back-to-back configuration for AC-coupled load switching?
Yes - the dual P-channel structure with common-source connection enables direct back-to-back implementation for bidirectional blocking. Each channel's -20V VDSS and body diode orientation allow symmetrical voltage handling up to ±10V across the series pair, making it suitable for USB OTG and reversible power path designs without external diodes.
Is the exposed thermal pad electrically isolated or connected internally?
The exposed thermal pad (Pin 6) is electrically connected to the common source (S1/S2) terminals, not isolated. It must be soldered to a PCB copper pour tied to system ground or the source net. Failure to connect it results in degraded thermal performance (RθJA rises from 97°C/W to 170°C/W) and potential thermal runaway under sustained load.
Does the device support 1.8V logic-level gate drive?
No - the gate threshold voltage range (-0.3V to -1.0V) requires |VGS| ≥ 2.5V for reliable enhancement-mode turn-on. At VGS = -1.8V, RDS(ON) exceeds 250mΩ, causing excessive conduction loss. A level shifter or 3.3V GPIO is required for full performance; 1.8V systems must use external gate drivers.
DMP2045UFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Ta)
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 634pF @ 10V
- Power - Max:
- 740mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMP2045UFDB-7 FAQ
1.How can I place an order for DMP2045UFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2045UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2045UFDB-7 reliable?
The price and inventory of DMP2045UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2045UFDB-7 is usually 5 days.
3.What payment methods are accepted for DMP2045UFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2045UFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2045UFDB-7?
DMP2045UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2045UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2045UFDB-7?
For technical support, including DMP2045UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2045UFDB-7 requirements.
6.How does Aetrix verify that DMP2045UFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMP2045UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2045UFDB-7 meets industry standards.
7.What is the process for return or replacement of DMP2045UFDB-7?
All DMP2045UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2045UFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2045UFDB-7 part is unused and in its original packaging.
Return procedure for DMP2045UFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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