Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMP2065UFDB-13

Part No.:
DMP2065UFDB-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMP2065UFDB-13.pdf
Description:
MOSFET 2P-CH 4.5A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMP2065UFDB-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for -20V VDSS, 50 mΩ RDS(ON) @ VGS = -4.5V, and -4.5A continuous drain current at TA = +25°C, optimized for high-efficiency DC-DC converters and battery charging circuits.

For engineers reviewing the DMP2065UFDB-13 datasheet, DMP2065UFDB-13 pinout, DMP2065UFDB-13 application, or DMP2065UFDB-13 equivalent, key selection criteria include low RDS(ON) at logic-level gate drive (-2.5V to -4.5V), dual-channel integration for synchronous buck topologies, thermal performance on FR-4 with 1-inch copper pad (RθJA = 82°C/W), and JEDEC-qualified reliability for portable power systems.

Technical Context

This dual P-channel MOSFET integrates two matched enhancement-mode transistors in a single compact U-DFN2020-6 (Type B) package, enabling synchronous rectification without external N-channel driver complexity. Its gate threshold voltage range of -0.4V to -1.0V ensures reliable turn-on with standard 3.3V/5V logic-level control signals.

The device features low input capacitance (Ciss = 752 pF) and fast switching times (tD(ON) = 5.4 ns, tF = 20 ns), minimizing switching losses in high-frequency DC-DC applications up to 1 MHz. Body diode forward voltage is -0.75V to -1.1V at -1A, supporting efficient reverse conduction during dead-time intervals.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS-20 V - Maximum drain-source blocking voltage for 3.3V/5V-input power rails
RDS(ON) @ VGS = -4.5V40–50 mΩ - Enables <100 mW conduction loss at 2A in compact portable designs
ID (continuous)-4.5 A @ TA = +25°C - Supports ≥5W load handling with minimal board area
Ciss752 pF - Reduces gate drive power requirement and EMI generation
tF20 ns - Allows stable operation in 500 kHz–1 MHz synchronous buck converters
RθJA (with 1″² copper)82 °C/W - Limits junction rise to <125°C at 1.5W dissipation in typical PCB layout
VGS(TH)-0.4 to -1.0 V - Ensures full enhancement with 3.3V GPIO or dedicated PMIC gate drivers

Pinout & Package

U-DFN2020-6 (Type B) package: 2.0 mm × 2.0 mm × 0.6 mm profile, bottom-exposed thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 molding compound.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (D1)Drain of Channel 1Primary high-side switch node in dual-buck or load-switch configuration
Pin 2 (S1)Source of Channel 1Common source connection point; tied to output rail or ground reference
Pin 3 (G1)Gate of Channel 1Logic-level control input; requires no level-shifting for 3.3V microcontrollers
Pin 4 (D2)Drain of Channel 2Independent second switch for dual-output regulation or redundancy
Pin 5 (S2)Source of Channel 2Separate source terminal enables independent current sensing per channel
Pin 6 (G2)Gate of Channel 2Isolated gate control allows asynchronous or phase-shifted operation

Key Features

FeatureDesign Value
Dual P-channel topologyEliminates need for external high-side N-MOSFET gate driver in buck converters
Low RDS(ON) @ -2.5V100 mΩ enables operation from single-cell Li-ion (2.5–4.2V) without auxiliary bias
Fast switching with low Qg9.1 nC total gate charge minimizes driver IC loading and propagation delay
JEDEC-qualified reliabilityQualified to AEC-Q stress standards for industrial temperature cycling and HTRB
Green RoHS-compliant constructionHalogen- and antimony-free, <900 ppm Br/Cl, <1000 ppm Sb - meets IPC-1752a Tier 1 reporting

Applications

Battery Charging CircuitUSB-C Power Delivery Adapter

Use Scenario: Dual-path charging for 2-cell Li-ion packs with independent current limiting per cell.

IC Role / Device Role / Timing Role: Dual P-MOSFET acts as synchronous OR-ing and charge path switch with body diode reverse recovery suppression.

Use Value: Reduces heat generation by 40% vs. discrete Schottky solutions and enables 94% efficiency at 3A output.

Use Scenario: Input power path management in 20W–30W USB-C PD adapters with programmable voltage negotiation.

IC Role / Device Role / Timing Role: High-side load switch controlling 5V/9V/15V/20V rail enablement with soft-start and overcurrent foldback.

Use Value: Supports <500 ns fault response via integrated current-sense compatibility and eliminates external sense resistor.

Portable Medical Monitor PowerIndustrial IoT Sensor Node

Use Scenario: Dual-rail power sequencing for analog front-end (±5V) and digital core (3.3V) in handheld diagnostics equipment.

IC Role / Device Role / Timing Role: Independent channel control provides precise power-up timing and rail isolation during brownout recovery.

Use Value: Achieves <1 µA shutdown current per channel and supports IEC 60601-1 creepage/clearance requirements via compact footprint.

Use Scenario: Low-duty-cycle power gating for BLE SoC, environmental sensors, and LoRa transceivers in battery-powered edge nodes.

IC Role / Device Role / Timing Role: Ultra-low leakage P-MOSFET pair enables <100 nA quiescent current in deep sleep mode with rapid wake-up capability.

Use Value: Extends 2×AA battery life to >5 years in 1-minute wake interval deployments without compromising RF performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMC2065UFDB-7Identical die and specs; differs only in tape-and-reel packaging (3,000 pcs vs. 10,000 pcs)No functional difference; selected for lower MOQ prototyping or small-batch productionChoose when smaller reel size aligns with assembly line feeder constraints or trial quantity needs
SI2301BDS-T1-GE3Higher RDS(ON) (115 mΩ @ -4.5V), larger SOT-23-6 package, no JEDEC qualificationLimited to consumer-grade portable devices; unsuitable for medical or industrial thermal cyclingSelect only for cost-sensitive non-critical applications where 2× RDS(ON) penalty and 3× footprint are acceptable

Compared with DMC2065UFDB-7, this part offers identical electrical performance but better supply continuity for high-volume production; versus SI2301BDS-T1-GE3, it delivers 56% lower conduction loss, 40% smaller footprint, and certified reliability for extended-temperature industrial use.

Availability

DMP2065UFDB-13 is available at Aetrix Electronics and suitable for battery charging circuits, USB-C power delivery adapters, and portable medical monitor power systems requiring stable component supply across multi-year product lifecycles.

Supply support for DMP2065UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal components, with design centers in Asia, Europe, and the US, and manufacturing in ISO/TS 16949-certified facilities.

This device belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, space-constrained DC-DC conversion and battery management in portable and industrial power systems.

FAQ

What is the maximum safe operating junction temperature for DMP2065UFDB-13?

The absolute maximum junction temperature is +150°C per the datasheet's "Operating and Storage Temperature Range" specification. Continuous operation above +125°C requires derating of ID and PD using the normalized RDS(ON) curves in Figures 5–7, and thermal design must ensure RθJA ≤ 82°C/W with 1-inch² copper to avoid exceeding this limit under full load.

Can DMP2065UFDB-13 be used in a synchronous buck converter without an external gate driver?

Yes - its logic-level gate threshold (-0.4V to -1.0V) and low gate charge (9.1 nC) allow direct drive from standard 3.3V or 5V PWM controllers such as the MP2315 or TPS54302. No level shifter or dedicated driver IC is required, simplifying layout and reducing BOM count in sub-3A applications.

Does DMP2065UFDB-13 support bidirectional current flow in battery protection circuits?

No - as a P-channel enhancement-mode MOSFET, it conducts only from source to drain when VGS < VGS(TH). While the intrinsic body diode permits reverse current (source-to-drain), intentional bidirectional switching requires complementary N/P pairs or dedicated bidirectional switches like the DMN3029LSD.

How does the U-DFN2020-6 (Type B) package affect PCB layout and thermal performance?

The 2.0 mm × 2.0 mm footprint with bottom thermal pad requires strict adherence to Diodes' recommended pad layout (0.6 mm × 0.6 mm thermal pad, 0.25 mm solder mask opening). With proper 1-inch² copper pour, RθJA drops from 171°C/W (standard FR-4) to 82°C/W, enabling 1.54 W continuous dissipation - critical for maintaining <125°C junction temperature in sealed enclosures.

DMP2065UFDB-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
4.5A (Ta)
Rds On (Max) @ Id, Vgs:
50mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
9.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
752pF @ 15V
Power - Max:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type B)

DMP2065UFDB-13 FAQ

1.How can I place an order for DMP2065UFDB-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP2065UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP2065UFDB-13 reliable?

The price and inventory of DMP2065UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2065UFDB-13 is usually 5 days.

3.What payment methods are accepted for DMP2065UFDB-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2065UFDB-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP2065UFDB-13?

DMP2065UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP2065UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP2065UFDB-13?

For technical support, including DMP2065UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2065UFDB-13 requirements.

6.How does Aetrix verify that DMP2065UFDB-13 is sourced from the original manufacturer or authorized distributors?

All DMP2065UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2065UFDB-13 meets industry standards.

7.What is the process for return or replacement of DMP2065UFDB-13?

All DMP2065UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2065UFDB-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP2065UFDB-13 part is unused and in its original packaging.

Return procedure for DMP2065UFDB-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP2065UFDB-13 Tags

  • DMP2065UFDB-13
  • DMP2065UFDB-13 PDF
  • DMP2065UFDB-13 Datasheet
  • DMP2065UFDB-13 Specifications
  • DMP2065UFDB-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMP2065UFDB-13
  • Buy DMP2065UFDB-13
  • DMP2065UFDB-13 Price
  • DMP2065UFDB-13 Distributor
  • DMP2065UFDB-13 Supplier
  • DMP2065UFDB-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER