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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP2067LVT-13

Name: DMP2067LVT-13
Brand: Diodes Incorporated
SKU: DMP2067LVT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP2067LVT-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMP2067LVT-13.pdf

Description:: MOSFET P-CH 20V 4.2A TSOT26

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMP2067LVT-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in TSOT26 package, rated for -20V V_DSS, 45mΩ R_DS(ON) @ V_GS = -4.5V, and -4.2A continuous drain current at T_A = +25°C. It serves as a low-side load switch in power management circuits with low gate threshold (-0.4V to -1.5V) and fast switching (t_F = 31ns), enabling efficient battery-powered portable electronics.

For engineers reviewing the DMP2067LVT-13 datasheet, DMP2067LVT-13 pinout, DMP2067LVT-13 application, or DMP2067LVT-13 equivalent, key selection criteria include verified R_DS(ON) vs. temperature behavior, body diode recovery performance (t_RR = 13ns), gate charge (Q_g = 15nC @ V_GS = -4.5V), and thermal resistance (R_θJA = 105°C/W on FR-4).

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(ON) while maintaining controlled gate charge and output capacitance. Its -1.5V maximum V_GS(TH) ensures reliable turn-on with 3.3V logic-level drive, and its C_iss/C_oss/C_rss values (1575pF/124pF/89pF @ V_DS = -10V) support stable high-frequency switching in DC-DC converters and load switches.

The device integrates a monolithic body diode with V_SD = -0.7V @ I_S = -2.1A and Q_RR = 6.7nC, enabling synchronous rectification and reverse-current blocking in buck regulators and USB power delivery paths without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-20V - Maximum drain-source voltage before avalanche breakdown; sets safe operating range for 12V rail switching.
R_DS(ON)	45mΩ @ V_GS = -4.5V - Confirmed on-resistance at standard logic-level gate drive; determines conduction loss in load-switch applications.
I_D (cont)	-4.2A @ T_A = +25°C - Continuous drain current rating under standard PCB layout; defines maximum steady-state load capability.
Q_g	15nC @ V_GS = -4.5V - Total gate charge required for full turn-on; directly impacts switching loss and driver sizing.
t_F	31ns - Fall time under defined test conditions (V_DS = -5V, R_g = 6Ω); critical for minimizing transition losses in PWM operation.
R_θJA	105°C/W - Junction-to-ambient thermal resistance on FR-4 board; used to calculate junction temperature rise under real power dissipation.
V_GS(TH)	-0.4V to -1.5V - Gate threshold voltage range; guarantees turn-on compatibility with 3.3V microcontroller GPIOs.

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin small outline transistor with exposed drain pad for thermal enhancement; footprint compatible with JEDEC MO-252, 0.95mm max height, 2.9mm × 1.6mm body.

Pin/Terminal	Circuit Role	Design Meaning
1 (D)	Drain	Main current-carrying terminal; internally connected to exposed pad for thermal and electrical path to PCB ground plane.
2 (D)	Drain	Second drain connection; paralleled with Pin 1 to reduce package inductance and improve current sharing.
3 (G)	Gate	Control input; requires <15nC charge for full enhancement; sensitive to ESD (±8V rating).
4 (D)	Drain	Third drain connection; part of 3-terminal drain configuration optimizing thermal and electrical performance.
5 (D)	Drain	Fourth drain connection; completes multi-drain structure for low-inductance, high-current routing.
6 (S)	Source	Reference node for gate drive; tied to system ground or negative rail; body diode anode connects here.

Key Features

Feature	Design Value
Low R_DS(ON) at logic-level drive	45mΩ @ V_GS = -4.5V enables <190mW conduction loss at 2A, reducing thermal stress in space-constrained designs.
Low gate threshold voltage	V_GS(TH) down to -0.4V ensures robust turn-on with 3.3V or even 2.5V controllers, eliminating need for level shifters.
Low input capacitance	C_iss = 1575pF minimizes gate drive power and improves switching efficiency in high-frequency (>1MHz) DC-DC topologies.
Green, RoHS-compliant construction	Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets IPC-1752A environmental compliance requirements.

Applications

USB Power Switching

Smartphone Battery Protection

Use Scenario: Controlling VBUS power delivery in USB Type-C ports with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as bidirectional current-controlled switch between battery and USB port.

Use Value: 45mΩ R_DS(ON) limits voltage drop to <90mV at 2A, preserving USB 2.0/3.0 signaling integrity and meeting USB PD spec voltage tolerance.

Use Scenario: Isolating main Li-ion battery from system loads during deep sleep or fault conditions.

IC Role / Device Role / Timing Role: Load switch enabling/disabling power to PMIC and application processor rails based on battery fuel gauge commands.

Use Value: -1.5V max V_GS(TH) allows direct control from 1.8V battery monitor IC outputs, eliminating external bias circuitry.

Industrial Sensor Node Power Gating

POS Terminal Power Sequencing

Use Scenario: Powering down wireless transceivers and analog front-ends between sensor readings to extend battery life.

IC Role / Device Role / Timing Role: High-efficiency P-channel switch placed between coin-cell supply and RF SoC power domain.

Use Value: 31ns fall time supports rapid power cycling (≤100μs off/on transitions), reducing quiescent current by >95% during idle intervals.

Use Scenario: Enabling 5V and 12V rails in point-of-sale terminals only when peripherals are active.

IC Role / Device Role / Timing Role: Controlled power switch in multi-rail sequencing architecture, driven by FPGA or microcontroller GPIO.

Use Value: 105°C/W R_θJA allows 1.2W dissipation on standard 2oz copper PCB, supporting 3.5A peak loads without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LVT-7	R_DS(ON) = 50mΩ @ -4.5V; higher Q_g = 18nC; same TSOT26 package	Marginally higher conduction and switching loss; suitable where cost sensitivity outweighs 11% R_DS(ON) penalty	Select when BOM cost reduction is prioritized over minimal power loss in battery-critical systems.
AO3401	R_DS(ON) = 44mΩ @ -4.5V; lower V_GS(TH) (-0.7V typ); SOT-23-3 package (no exposed drain)	Limited thermal performance (R_θJA ≈ 150°C/W); unsuitable for >2A continuous loads	Choose only for low-current (<1.5A), low-power applications where board space is more constrained than thermal margin.

Compared with DMN2053LVT-7 and AO3401, DMP2067LVT-13 delivers optimal balance of low R_DS(ON), fast switching, and thermal capability in TSOT26-making it preferred for 2–4A portable power switches requiring both efficiency and reliability.

Availability

DMP2067LVT-13 is available at Aetrix Electronics and suitable for USB power delivery, smartphone battery management, and industrial sensor node power gating requiring stable component supply across production lifecycles.

Supply support for DMP2067LVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMP2067LVT belongs to Diodes' "Logic-Level P-Channel MOSFET" product line, engineered specifically for compact, battery-operated devices demanding low-voltage gate drive, minimal conduction loss, and robust thermal performance in ultra-thin packages.

FAQ

What is the maximum continuous drain current for DMP2067LVT-13 at 70°C ambient?

The datasheet specifies -3.4A continuous drain current at T_A = +70°C using the recommended FR-4 PCB layout with 2oz copper. This derating reflects thermal limitations due to R_θJA = 105°C/W and maximum T_J = 150°C. Actual current must be validated against measured board temperature rise under real operating conditions.

Does DMP2067LVT-13 require a gate resistor for stability?

A gate resistor is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 89pF) and PCB trace inductance. The datasheet test condition uses R_g = 6.0Ω; typical design practice uses 10–47Ω for 3.3V logic-driven switching at ≤1MHz to ensure clean edges and minimize EMI without compromising speed.

Can DMP2067LVT-13 be used in linear regulation mode?

No-it is not characterized or guaranteed for linear (ohmic) operation. The Safe Operating Area (SOA) curve shows DC limitation is R_DS(ON)-bounded only up to ~100ms; sustained linear use risks thermal runaway due to positive temperature coefficient of R_DS(ON) and lack of SOA derating data beyond pulsed conditions.

Is the exposed drain pad electrically connected to the drain terminals?

Yes-the exposed pad is an integral part of the drain metallization and must be soldered to a PCB copper pour tied to the drain net. This connection provides both thermal relief (reducing R_θJA by ~27°C/W vs. non-connected pad) and low-inductance current return path, as confirmed in the mechanical drawings and thermal characterization notes.

DMP2067LVT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1575 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMP2067LVT-13 FAQ

1.How can I place an order for DMP2067LVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP2067LVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP2067LVT-13 reliable?

The price and inventory of DMP2067LVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2067LVT-13 is usually 5 days.

3.What payment methods are accepted for DMP2067LVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2067LVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP2067LVT-13?

DMP2067LVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP2067LVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP2067LVT-13?

For technical support, including DMP2067LVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2067LVT-13 requirements.

6.How does Aetrix verify that DMP2067LVT-13 is sourced from the original manufacturer or authorized distributors?

All DMP2067LVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2067LVT-13 meets industry standards.

7.What is the process for return or replacement of DMP2067LVT-13?

All DMP2067LVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2067LVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP2067LVT-13 part is unused and in its original packaging.

Return procedure for DMP2067LVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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