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Diodes Incorporated DMP2075UFDB-13
- Part No.:
- DMP2075UFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP2075UFDB-13.pdf
- Description:
- MOSFET 2P-CH 20V 3.8A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,625
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Product details
Overview
DMP2075UFDB from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for -20V VDSS, 75 mΩ RDS(ON) at VGS = -4.5V, and -3.8A continuous drain current at TA = +25°C. It serves as a compact, low-RDS(ON) load switch in portable power adaptors and battery-powered systems requiring bidirectional blocking and efficient power sequencing.
For engineers reviewing the DMP2075UFDB datasheet, DMP2075UFDB pinout, DMP2075UFDB application, or DMP2075UFDB equivalent, key selection criteria include its dual-channel P-MOS topology, 0.6 mm max height for space-constrained PCBs, ESD-protected gate, and verified thermal performance on FR-4 with 2 oz copper.
Technical Context
This device integrates two independent P-channel MOSFETs in a single ultra-thin 2.0 × 2.0 mm U-DFN2020-6 (Type B) package with exposed thermal pad. Each channel features a gate threshold voltage of -0.35 V to -1.4 V and supports logic-level drive down to -2.5 V.
Its low input capacitance (Ciss = 642 pF), fast switching (tD(ON) = 5.5 ns, tF = 34.3 ns), and body diode with tRR = 13 ns enable high-frequency load switching without excessive gate drive loss or shoot-through risk in synchronous configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20 V - Maximum drain-source blocking voltage for bidirectional DC load isolation in ≤20 V systems. |
| RDS(ON) @ VGS = -4.5 V | 75 mΩ - Confirmed on-resistance enabling ≤0.43 W conduction loss at -3.8 A, critical for thermal management in small footprints. |
| ID Continuous @ +25°C | -3.8 A - Steady-state current rating per channel under standard FR-4 layout, defining maximum load capability per FET. |
| Ciss | 642 pF - Low input capacitance reduces gate drive power and enables faster turn-on with minimal RC delay. |
| Qg @ VGS = -4.5 V | 8.8 nC - Total gate charge determines minimum gate driver current needed for specified switching speed. |
| RθJA (2 oz Cu) | 92 °C/W - Thermal resistance under high-copper PCB conditions, allowing ~1.4 W power dissipation before exceeding 150°C junction limit. |
| tRR | 13 ns - Fast body diode reverse recovery time minimizes cross-conduction loss during dead-time transitions in half-bridge topologies. |
Pinout & Package
U-DFN2020-6 (Type B) package: 2.0 mm × 2.0 mm footprint, 0.6 mm max height, exposed thermal pad (D2), NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Q1 | Main current path for first P-MOS channel; connected to high-side load or supply rail. |
| S1 | Source of Q1 | Return path for Q1; tied to system ground or intermediate node in dual-rail switching. |
| G1 | Gate of Q1 | Logic-level control input for Q1; requires negative bias relative to S1 to turn on. |
| D2 | Drain of Q2 | Independent drain node for second P-MOS channel; enables separate load control or redundancy. |
| S2 | Source of Q2 | Isolated source return for Q2; supports independent biasing or shared ground with S1. |
| G2 | Gate of Q2 | Independent gate control; allows asynchronous or synchronized switching of both channels. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at -4.5 V | 75 mΩ enables <0.43 W conduction loss per channel at full rated current, reducing thermal stress in dense layouts. |
| ESD-protected gate | Qualified to >2 kV HBM per JESD22-A114, eliminating need for external gate protection in handheld and portable designs. |
| 0.6 mm max profile | Enables use in ultra-thin consumer devices (e.g., USB-C PD adapters, wearables) where Z-height is constrained by mechanical stack-up. |
| Lead-free & halogen-free | Complies with RoHS 3 (2015/863/EU) and Diodes' "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb), supporting environmental compliance programs. |
| Low Ciss / Coss ratio | Ciss/Coss ≈ 6.5 improves Miller immunity and reduces gate oscillation risk during hard switching. |
Applications
| USB-C Power Delivery Switching | Smartphone Battery Protection |
|---|---|
|
Use Scenario: Dual-channel load switching in USB-C PD sink applications requiring independent VBUS and VCONN control. IC Role / Device Role / Timing Role: Dual P-MOSFET acts as back-to-back switch for reverse polarity protection and dynamic load disconnect. Use Value: 75 mΩ RDS(ON) limits voltage drop to <285 mV at 3.8 A, preserving PD negotiation margin while enabling 0.6 mm Z-height compliance. |
Use Scenario: Overvoltage and overcurrent protection circuitry in smartphone battery packs with dual-cell monitoring. IC Role / Device Role / Timing Role: Independent P-MOS channels isolate main battery path and fuel gauge communication line during fault events. Use Value: Fast 13 ns body diode recovery prevents latch-up during transient surges, and ESD-hardened gates withstand handling in high-volume assembly. |
| Portable Medical Sensor Hub | Industrial IoT Edge Node |
|
Use Scenario: Power gating of BLE radio, sensor array, and display subsystems in battery-operated medical wearables. IC Role / Device Role / Timing Role: Dual low-RDS(ON) switches enable selective subsystem shutdown with <1 µA leakage per channel (IDSS ≤ -1.0 µA). Use Value: 92 °C/W RθJA on 2 oz Cu allows sustained 3.0 A operation at ambient up to +70°C without derating in sealed enclosures. |
Use Scenario: Redundant power path management in industrial edge nodes using dual 12 V backup supplies. IC Role / Device Role / Timing Role: Dual P-MOSFET provides OR-ing function with automatic failover and reverse current blocking. Use Value: Matched channel parameters (RDS(ON), VGS(TH)) ensure balanced current sharing and eliminate need for external balancing resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Higher RDS(ON) (110 mΩ @ -4.5 V), same U-DFN2020-6 package, no ESD rating specified. | Lacks documented ESD protection; unsuitable for handheld ESD-prone environments without external clamping. | Select when cost is primary constraint and ESD robustness is not required in final system environment. |
| SI2301-TP | Single-channel P-MOSFET, SOT-23 package, RDS(ON) = 115 mΩ @ -4.5 V, higher RθJA (200 °C/W). | Requires two discrete devices and larger board area; higher thermal resistance limits current in compact layouts. | Choose only if dual-channel integration is unnecessary and legacy SOT-23 footprint must be retained. |
Compared with DMC2038LVT-7 and SI2301-TP, DMP2075UFDB delivers lower conduction loss per channel, integrated dual topology in minimal area, and guaranteed ESD protection-making it optimal for space- and reliability-critical portable power systems.
Availability
DMP2075UFDB is available at Aetrix Electronics and suitable for USB-C power delivery modules, smartphone battery management systems, portable medical sensor hubs, and industrial IoT edge nodes requiring stable component supply across production lifecycles.
Supply support for DMP2075UFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The DMP2075UFDB belongs to Diodes' advanced low-RDS(ON) MOSFET product line, engineered specifically for compact, high-reliability load switching in battery-powered and portable electronics.
FAQ
What is the maximum allowable gate-source voltage for DMP2075UFDB?
The absolute maximum gate-source voltage (VGS) is ±8 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, drive signals should remain within -4.5 V to 0 V for full enhancement, with transient spikes clamped below ±8 V using external Zener diodes if necessary.
Can DMP2075UFDB be used in a back-to-back configuration for AC blocking?
Yes-its dual P-channel structure supports back-to-back connection (sources tied together) to block bidirectional current flow. With VDSS = -20 V per channel and matched RDS(ON), it achieves symmetrical blocking up to ±20 V, commonly deployed in USB-C reversible port protection circuits.
Does the U-DFN2020-6 (Type B) package require solder paste stencil adjustments?
Yes-the exposed thermal pad (D2) demands precise stencil aperture design: 70–80% area ratio, 0.12 mm thickness, and 0.3 mm × 0.3 mm openings aligned to pad geometry. Inadequate paste volume causes voiding and thermal derating; verified reflow profiles show peak temperature of 245°C for 60 seconds ensures void-free joints.
How does RDS(ON) vary with temperature at VGS = -4.5 V?
At VGS = -4.5 V, RDS(ON) increases by ~1.8× from 25°C to 125°C (Figure 5), reaching ~135 mΩ. This is inherent to P-channel silicon and must be factored into worst-case power loss calculations-e.g., 1.35 W loss per channel at -3.0 A and +125°C ambient with minimal copper.
DMP2075UFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 75mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 642pF @ 10V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMP2075UFDB-13 FAQ
1.How can I place an order for DMP2075UFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2075UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2075UFDB-13 reliable?
The price and inventory of DMP2075UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2075UFDB-13 is usually 5 days.
3.What payment methods are accepted for DMP2075UFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2075UFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2075UFDB-13?
DMP2075UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2075UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2075UFDB-13?
For technical support, including DMP2075UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2075UFDB-13 requirements.
6.How does Aetrix verify that DMP2075UFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMP2075UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2075UFDB-13 meets industry standards.
7.What is the process for return or replacement of DMP2075UFDB-13?
All DMP2075UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2075UFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2075UFDB-13 part is unused and in its original packaging.
Return procedure for DMP2075UFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMP2075UFDB-13 Tags
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