Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMP2075UVT-13

Part No.:
DMP2075UVT-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMP2075UVT-13.pdf
Description:
MOSFET P-CH 20V 3.8A TSOT26 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,217

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMP2075UVT from Diodes Incorporated is a P-channel enhancement-mode MOSFET in TSOT26 package, rated for -20V VDSS, 75 mΩ RDS(ON) @ VGS = -4.5V, and -3.8A continuous drain current at TA = +25°C. It serves as a low-side load switch or power rail controller in compact DC-DC converter output stages and USB port protection circuits.

For engineers reviewing the DMP2075UVT datasheet, DMP2075UVT pinout, DMP2075UVT application, or DMP2075UVT equivalent, key selection criteria include gate threshold voltage (-0.3 to -1.0 V), low input capacitance (642 pF Ciss), thermal resistance (77 °C/W with copper pad), body diode forward voltage (-1.2 V), and ESD-protected gate structure.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while maintaining fast switching via low Qg (8.8 nC) and moderate Crss (87 pF). Its -1.0 V maximum VGS(TH) enables direct interfacing with 1.8 V and 3.3 V logic without level shifting.

The device integrates an intrinsic body diode with -1.2 V VSD at -1.0 A and exhibits controlled reverse recovery (tRR = 13 ns, QRR = 3.3 nC), supporting synchronous rectification and bidirectional current handling in battery-powered systems.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -20 V - Maximum blocking voltage for 3.3 V–5 V rail switching
RDS(ON) 75 mΩ @ VGS = -4.5V - Enables <100 mW conduction loss at 3.8 A
ID (max) -3.8 A @ TA = +25°C - Supports high-current load switching on space-constrained PCBs
VGS(TH) -0.3 to -1.0 V - Ensures turn-on with standard I/O voltages; avoids partial enhancement
Ciss 642 pF - Limits gate drive power and enables efficient 1–2 MHz switching
Qg 8.8 nC - Reduces gate driver stress and switching transition time
tRR 13 ns - Minimizes shoot-through risk in half-bridge configurations

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 × 2.8 × 0.6 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Source terminal (P-channel) Connected to higher potential rail; forms return path for load current
2 (Gate) Control input Accepts negative VGS to enhance channel; ESD-protected
3 (Drain) Power output node Switches load to ground; handles full ID and body diode conduction
4 (Drain) Power output node (tied internally) Dual-drain configuration lowers RDS(ON) and improves thermal spreading
5 (Drain) Power output node (tied internally) Third drain connection enhances current sharing and reduces package inductance
6 (Source) Source terminal (tied to Pin 1) Provides second source connection for improved grounding and current distribution

Key Features

Feature Design Value
Low RDS(ON) at low VGS 137 mΩ @ VGS = -2.5V - Enables operation from single-cell Li-ion (2.5–3.6 V) without boost
ESD-protected gate ±8 V VGS rating with integrated protection - Eliminates need for external gate Zener clamps
Low input capacitance Ciss = 642 pF - Reduces gate drive power and supports high-frequency PWM control
Thermal performance RθJA = 77 °C/W (with 1-in² copper) - Allows >1 W dissipation in compact layouts
Green packaging Halogen- and antimony-free, RoHS 3 compliant - Meets IPC-1752A material declaration requirements

Applications

USB Port Power Switching Li-ion Battery Protection

Use Scenario: Controlling 5 V power delivery to downstream USB peripherals with overcurrent detection.

IC Role / Device Role / Timing Role: Low-side power switch enabling/disabling VBUS with fast turn-off (<50 ns fall time) to prevent fault propagation.

Use Value: 75 mΩ RDS(ON) limits voltage drop to <200 mV at 2.5 A, preserving USB 2.0 voltage compliance.

Use Scenario: Isolating protected cell terminals during overvoltage, overtemperature, or short-circuit events.

IC Role / Device Role / Timing Role: Primary discharge FET in battery management IC (BMS) secondary protection circuit.

Use Value: -1.0 V max VGS(TH) ensures reliable turn-on from BMS control outputs operating at 2.8–3.3 V.

DC-DC Converter Synchronous Rectifier Industrial Sensor Node Power Gating

Use Scenario: Replacing Schottky diode in buck converter output stage to improve efficiency above 1 A load.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal; body diode conducts during dead-time.

Use Value: 13 ns tRR and 3.3 nC QRR minimize reverse recovery losses and reduce EMI generation.

Use Scenario: Enabling/disabling entire sensor subsystem (MCU, transceiver, analog front-end) between wake cycles.

IC Role / Device Role / Timing Role: Main power rail switch controlled by microcontroller GPIO with minimal leakage (<1 µA IDSS).

Use Value: 1.2 W PD rating and -55°C to +150°C operating range support extended outdoor deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2075UVT-13 N-channel counterpart with identical RDS(ON) (75 mΩ @ VGS = +4.5V), but requires high-side driver or bootstrap circuitry Suitable only where gate drive can be referenced to drain (e.g., high-side switch in buck controller) Select when topology demands N-channel for lower RDS(ON) at same die size and cost is secondary to drive complexity
AO3401 Higher RDS(ON) (85 mΩ @ VGS = -4.5V), larger Qg (12 nC), no specified ESD rating on gate Acceptable in non-critical, low-frequency switching where gate robustness is not required Choose only if legacy qualification or dual-sourcing mandates AO3401 footprint compatibility; verify ESD margin in system-level testing

Compared with DMN2075UVT-13 and AO3401, DMP2075UVT delivers superior gate robustness (ESD-protected), tighter VGS(TH) distribution, and lower Qg, making it preferred for battery-powered systems with constrained drive capability and reliability-critical operation.

Availability

DMP2075UVT is available at Aetrix Electronics and suitable for USB power delivery, Li-ion battery protection, and industrial sensor node power gating requiring stable component supply across long-lifecycle embedded programs.

Supply support for DMP2075UVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMP2075UVT belongs to Diodes' "Ultra-Low RDS(ON) Logic-Level MOSFET" product line, engineered specifically for space-constrained, low-voltage DC-DC and load-switching applications where gate drive simplicity and thermal efficiency are critical.

FAQ

What is the maximum safe operating junction temperature for DMP2075UVT?

The absolute maximum junction temperature is +150°C per the datasheet. Derating begins at TJ > 125°C, and sustained operation above 135°C requires thermal modeling with actual board layout and airflow. The device's RθJA drops from 105°C/W to 77°C/W when using a 1-inch square copper pad, enabling 1.2 W continuous dissipation at ambient 25°C.

Can DMP2075UVT be used in a high-side switching configuration?

No - DMP2075UVT is a P-channel MOSFET intended for low-side switching. High-side use would require gate voltage more positive than source, which contradicts its P-channel enhancement-mode operation. For high-side switching, a charge-pump driver with N-channel FET or dedicated high-side driver IC is required.

Does DMP2075UVT have avalanche rating information in its datasheet?

No avalanche energy (EAS) or repetitive avalanche ratings are specified in DS40947 Rev. 3–2. The device is not characterized for unclamped inductive switching. Designers must ensure inductive loads are snubbed or clamped externally, or limit dI/dt to avoid exceeding VDSS during turn-off.

Is the TSOT26 package of DMP2075UVT compatible with standard reflow profiles?

Yes - the TSOT26 package is qualified for lead-free reflow per J-STD-020, Level 1 moisture sensitivity. Peak reflow temperature must not exceed 260°C, with time above 217°C limited to 60–150 seconds. Recommended profile uses ramp rate ≤3°C/s, peak hold at 235–245°C for 40–80 s, and cooling rate ≤6°C/s.

DMP2075UVT-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
75mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.8 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
642 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26

DMP2075UVT-13 FAQ

1.How can I place an order for DMP2075UVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP2075UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP2075UVT-13 reliable?

The price and inventory of DMP2075UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2075UVT-13 is usually 5 days.

3.What payment methods are accepted for DMP2075UVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2075UVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP2075UVT-13?

DMP2075UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP2075UVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP2075UVT-13?

For technical support, including DMP2075UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2075UVT-13 requirements.

6.How does Aetrix verify that DMP2075UVT-13 is sourced from the original manufacturer or authorized distributors?

All DMP2075UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2075UVT-13 meets industry standards.

7.What is the process for return or replacement of DMP2075UVT-13?

All DMP2075UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2075UVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP2075UVT-13 part is unused and in its original packaging.

Return procedure for DMP2075UVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP2075UVT-13 Tags

  • DMP2075UVT-13
  • DMP2075UVT-13 PDF
  • DMP2075UVT-13 Datasheet
  • DMP2075UVT-13 Specifications
  • DMP2075UVT-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMP2075UVT-13
  • Buy DMP2075UVT-13
  • DMP2075UVT-13 Price
  • DMP2075UVT-13 Distributor
  • DMP2075UVT-13 Supplier
  • DMP2075UVT-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER