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Diodes Incorporated DMP2075UVT-7

Part No.:
DMP2075UVT-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMP2075UVT-7.pdf
Description:
MOSFET P-CH 20V 3.8A TSOT26 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,949

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Product details

Overview

DMP2075UVT from Diodes Incorporated is a P-channel enhancement-mode MOSFET designed for low-voltage, high-efficiency power switching in compact DC-DC converters and load switches. It delivers 75 mΩ RDS(ON) at VGS = −4.5 V, supports −3.8 A continuous drain current at +25°C, and features a low −1.0 V gate threshold voltage enabling direct interface with 3.3 V logic. Its TSOT26 package suits space-constrained portable power rails.

For engineers reviewing the DMP2075UVT datasheet, DMP2075UVT pinout, DMP2075UVT application, or DMP2075UVT equivalent, key selection criteria include verified RDS(ON) at −2.5 V gate drive, thermal resistance under PCB-defined layout (RθJA = 77 °C/W with 1-inch2 copper), and ESD-protected gate integrity per human-body model.

Technical Context

This MOSFET operates as a single-polarity high-side switch in buck converter synchronous rectification, USB port power control, and battery protection circuits. Its −20 V VDSS, ±8 V VGSS, and −1.2 V diode forward voltage (VSD) support robust reverse-biased body diode operation during discontinuous conduction mode.

The device uses planar trench-gate technology to balance low input capacitance (Ciss = 642 pF) and fast switching (tr = 22.6 ns, tf = 34.3 ns), while its 8.8 nC total gate charge enables efficient gate driver sizing for 1–2 MHz switching frequencies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS −20 V: Maximum drain-source blocking voltage for 3.3 V/5 V system rail isolation
RDS(ON) 75 mΩ @ VGS = −4.5 V: Enables <100 mW conduction loss at 3.8 A in compact layouts
ID (max) −3.8 A @ TA = +25°C: Sustains full-load current in handheld device power paths
VGS(TH) −0.3 to −1.0 V: Ensures reliable turn-on with standard 3.3 V GPIO without level-shifting
Ciss 642 pF @ VDS = −10 V: Limits gate drive power and EMI in high-frequency SMPS designs
RθJA 77 °C/W (with 1-inch² copper): Defines thermal derating for 1.6 W PD in industrial ambient
Qg 8.8 nC @ VGS = −4.5 V: Determines minimum gate driver peak current for <100 ns switching transitions

Pinout & Package

Package: TSOT26 - ultra-thin, 6-pin surface-mount package with 0.95 mm pitch, 2.9 mm × 2.8 mm footprint, and 1.0 mm max height; RoHS-compliant matte tin finish over copper leadframe.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Source terminal (S) Common return path for load current; electrically tied to exposed pad for thermal conduction
2 (Gate) Control input (G) High-impedance node requiring <10 kΩ series resistor to suppress ringing during fast edge transitions
3 (Drain) Power output (D) Switched high-side node; connects to input rail; body diode anode referenced to source
4 (Drain) Power output (D) Parallel drain connection for reduced current density and lower RDS(ON) contribution
5 (Drain) Power output (D) Third parallel drain connection enhancing thermal spreading and current sharing
6 (Source) Source terminal (S) Secondary source tie for improved ground loop integrity and reduced parasitic inductance

Key Features

Feature Design Value
Low RDS(ON) at −2.5 V 137 mΩ enables 3.3 V microcontroller direct-drive in always-on battery backup circuits
ESD-protected gate HBM rating ≥2 kV ensures robustness against assembly handling and board-level ESD events
Low Coss 98 pF minimizes Miller effect-induced shoot-through risk in synchronous buck topologies
Green compound Halogen- and antimony-free molding meets IPC-1752A Class 3 material declaration requirements
Thermal resistance optimization Exposed source pad design reduces junction-to-board thermal resistance by >30% vs. standard SOT23

Applications

Battery Protection Circuit USB Power Delivery Switch

Use Scenario: Reverse-current blocking and over-discharge cutoff in Li-ion battery packs for wearables.

IC Role / Device Role / Timing Role: High-side load switch controlling battery-to-system power path; activated/deactivated on firmware command.

Use Value: 75 mΩ RDS(ON) limits voltage drop to <285 mV at 3.8 A, preserving battery runtime and enabling accurate fuel gauging.

Use Scenario: VBUS enable/disable in USB Type-C receptacles supporting 3 A charging profiles.

IC Role / Device Role / Timing Role: P-channel high-side switch isolating downstream ports during hot-plug detection or fault conditions.

Use Value: −1.0 V VGS(TH) ensures full enhancement with 3.3 V USB controller I/O, eliminating external level shifters.

DC-DC Synchronous Rectifier Industrial Sensor Power Gate

Use Scenario: Low-loss freewheeling path in 5 V → 3.3 V buck converters powering FPGA I/O banks.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by PWM controller's complementary output.

Use Value: 137 mΩ RDS(ON) at −2.5 V gate drive maintains efficiency >92% at light loads where diode conduction dominates losses.

Use Scenario: Controlled power gating of 24 V analog sensor transmitters in factory automation PLC modules.

IC Role / Device Role / Timing Role: High-side switch enabling remote ON/OFF via isolated digital signal; integrated body diode handles inductive kickback.

Use Value: −20 V VDSS and −25 A pulsed rating withstand 48 V surge transients per IEC 61000-4-5 Level 3 testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMG2305UVT-7 RDS(ON) = 48 mΩ @ −4.5 V; higher Qg = 12.5 nC; same TSOT26 package Better conduction loss but slower switching; suited for <500 kHz applications prioritizing efficiency over speed Select when thermal margin is constrained and gate drive strength exceeds 1 A peak
AO3401A RDS(ON) = 85 mΩ @ −4.5 V; RθJA = 110 °C/W; SOT-23 package (larger footprint) Lower cost but inferior thermal performance; requires larger PCB area for equivalent power dissipation Choose for cost-sensitive consumer designs where board space allows SOT-23 and 1.2 W PD suffices

Compared with DMG2305UVT-7 and AO3401A, DMP2075UVT offers optimal balance of low gate charge (8.8 nC), moderate RDS(ON) (75 mΩ), and superior thermal resistance (77 °C/W), making it preferred for space-limited, medium-frequency DC-DC and USB power switches.

Availability

DMP2075UVT is available at Aetrix Electronics and suitable for USB-C power delivery modules, wearable battery management systems, and industrial sensor interface boards requiring stable component supply across multi-year production cycles.

Supply support for DMP2075UVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.

This device belongs to Diodes' "Ultra-Low RDS(ON) Power MOSFET" product line, engineered specifically for high-density portable and IoT power architectures demanding minimal conduction loss and logic-level gate compatibility.

FAQ

What is the maximum safe operating temperature for DMP2075UVT?

The junction temperature must not exceed +150°C under any condition. With RθJA = 77 °C/W and 1.6 W maximum power dissipation, ambient temperature must stay below +73°C for continuous operation at full rated current-verified using the 1-inch² copper thermal pad layout specified in DS40947.

Can DMP2075UVT be used in linear regulator applications?

No-it is optimized for switching operation only. Its RDS(ON) variation with temperature (±20% from −55°C to +150°C) and lack of SOA curves beyond pulsed operation make it unsuitable for linear pass element use; dedicated LDOs or bipolar pass transistors are recommended instead.

Is the body diode suitable for reverse polarity protection?

Yes-the integrated body diode has VSD = −1.2 V at −1.0 A and tRR = 13 ns, enabling effective reverse-current blocking in battery-input circuits. However, external Schottky diodes remain preferred where <0.4 V forward drop is mandatory for ultra-low-power standby modes.

Does DMP2075UVT require a gate resistor in typical switching applications?

Yes-a 10 Ω to 33 Ω series gate resistor is recommended to dampen ringing caused by trace inductance interacting with Ciss and Crss. This prevents false turn-on due to dv/dt coupling and ensures clean 22.6 ns rise time without overshoot, as validated in the datasheet's test circuit (RG = 3.0 Ω).

DMP2075UVT-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
75mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.8 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
642 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26

DMP2075UVT-7 FAQ

1.How can I place an order for DMP2075UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP2075UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP2075UVT-7 reliable?

The price and inventory of DMP2075UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2075UVT-7 is usually 5 days.

3.What payment methods are accepted for DMP2075UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2075UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP2075UVT-7?

DMP2075UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP2075UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP2075UVT-7?

For technical support, including DMP2075UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2075UVT-7 requirements.

6.How does Aetrix verify that DMP2075UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMP2075UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2075UVT-7 meets industry standards.

7.What is the process for return or replacement of DMP2075UVT-7?

All DMP2075UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2075UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP2075UVT-7 part is unused and in its original packaging.

Return procedure for DMP2075UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP2075UVT-7 Tags

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