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Diodes Incorporated DMP2100UCB9-7

Part No.:
DMP2100UCB9-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
9-UFBGA, WLBGA
Datasheet:
AetrixDMP2100UCB9-7.pdf
Description:
MOSFET 2P-CH 20V 3A 9UWLB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,403

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Product details

Overview

DMP2100UCB9 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in a 9-pin wafer-level chip-scale package (U-WLB1515-9), designed for high-efficiency load switching and battery protection circuits. It delivers VDSS = –20 V, RDS(on) = 80 mΩ @ VGS = –4.5 V, Qg = 3.3 nC, and supports –4 A continuous drain current at TC = +25°C - enabling compact, low-loss power path control in portable battery-powered systems.

For engineers reviewing the DMP2100UCB9 datasheet, DMP2100UCB9 pinout, DMP2100UCB9 application, or DMP2100UCB9 equivalent, key selection criteria include its ultra-low gate charge for fast switching, –0.7 V typical VGS(th) for low-voltage turn-on, 3 kV HBM ESD rating, 0.62 mm profile, and AEC-Q101 qualification for automotive-grade reliability in space-constrained designs.

Technical Context

This dual P-MOSFET integrates two identical enhancement-mode channels in a single U-WLB1515-9 die-attach package with shared source terminals per channel and independent gate/drain connections. Its LD-MOS process achieves a low figure of merit (RDS(on) × Qg = 0.264 Ω·nC) while maintaining robust safe operating area (SOA) up to 100 µs pulses at –28 A.

The device operates with VGS(th) ranging from –0.4 V to –0.9 V, enabling reliable turn-on from low-voltage microcontrollers or battery monitors. Thermal resistance RθJA is 65 °C/W on 1-in² 2-oz copper, supporting 1.6 W power dissipation under optimized PCB layout - critical for thermally dense battery management modules.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS–20 V: Maximum drain-source blocking voltage for 2-cell Li-ion or 12 V automotive auxiliary rail applications.
RDS(on)80 mΩ @ VGS = –4.5 V: Low conduction loss enabling <160 mW I²R loss at –2 A, critical for thermal budget in sealed battery packs.
Qg3.3 nC: Enables sub-10 ns turn-on delay and 7 ns rise time with 30 Ω gate resistor - suitable for PWM-controlled load switches up to 1 MHz.
VGS(th)–0.7 V typ.: Allows direct drive from 1.8 V or 3.3 V logic without level-shifting, reducing BOM count in portable system PMICs.
ESD Rating3 kV HBM: Protects gate oxide during board assembly and end-user handling in handheld devices.
PackageU-WLB1515-9: 1.5 mm × 1.5 mm footprint with 0.62 mm height - fits within tight spacing constraints of wearable and IoT sensor modules.

Pinout & Package

Package: U-WLB1515-9 - wafer-level chip-scale package with 9 solder bumps arranged in 3×3 grid; 0.5 mm pitch; 0.025 mm typical bump height; 0.0018 g mass.

Pin/TerminalCircuit RoleDesign Meaning
G1Gate of Channel 1Independent control input for first P-MOSFET; requires negative bias relative to source to conduct.
D1Drain of Channel 1High-side switch output node; connects to load or battery cathode in reverse-polarity protection.
S1Source of Channel 1Common return path for Channel 1; tied to system ground or battery anode depending on topology.
G2Gate of Channel 2Independent control input for second P-MOSFET; enables dual-load or redundancy control.
D2Drain of Channel 2Second high-side switch output; supports independent load switching or parallel operation with D1.
S2Source of Channel 2Common return path for Channel 2; electrically isolated from S1 unless externally connected.
SSShared Source PadThermal and electrical common source connection for both channels - used for simplified PCB routing and improved thermal coupling.

Key Features

FeatureDesign Value
LD-MOS process technologyDelivers industry-leading RDS(on) × Qg figure of merit (0.264 Ω·nC), minimizing simultaneous conduction and switching losses.
Ultra-low VGS(th)–0.7 V typical threshold enables direct interface with low-voltage MCUs (e.g., ARM Cortex-M0+) without gate drivers.
0.62 mm profileReduces vertical stack height in multi-layer wearables and hearing aids where Z-axis clearance is limited to <0.7 mm.
AEC-Q101 qualificationValidated for automotive battery disconnect and junction box applications requiring –40°C to +125°C operation and 1000-cycle temperature cycling.

Applications

Battery Protection CircuitLoad Switch for Portable Devices

Use Scenario: Preventing over-discharge and short-circuit damage in 2S Li-ion battery packs used in power tools and medical handhelds.

IC Role / Device Role / Timing Role: Dual-channel high-side switch controlling battery cathode connection; one channel for charge path, one for discharge path with independent enable signals.

Use Value: 80 mΩ RDS(on) limits voltage drop to <160 mV at 2 A, preserving usable battery capacity and enabling accurate fuel gauging.

Use Scenario: Enabling/disabling power to USB-C peripheral ports in docking stations and multi-port chargers.

IC Role / Device Role / Timing Role: Dual P-MOSFET load switch providing independent 3.3 V and 5 V rail control with fast turn-on (<15 ns) and low quiescent current.

Use Value: 3.3 nC Qg allows clean, bounce-free switching at 500 kHz PWM frequency - eliminating inrush-induced brownouts during hot-plug events.

Reverse Polarity ProtectionAutomotive Body Control Module

Use Scenario: Safeguarding 12 V infotainment head units against incorrect battery terminal connection during service.

IC Role / Device Role / Timing Role: Single-channel configured as ideal diode replacement; G1/D1/S1 used with external resistor divider to set precise trip point.

Use Value: –20 V VDSS withstands load-dump transients up to ISO 7637-2 Pulse 5a, while 3 kV HBM ESD protects against technician handling.

Use Scenario: Controlling power to LED interior lighting and window motor drivers in entry-level vehicles.

IC Role / Device Role / Timing Role: Dual high-side driver implementing fail-safe shutdown and diagnostics via separate gate control lines.

Use Value: AEC-Q101 qualification ensures >1000 hours HTOL lifetime at 150°C junction temperature - meeting OEM requirements for 15-year vehicle service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2016LFG-7RDS(on) = 100 mΩ @ –4.5 V; Qg = 2.8 nC; SO-8 package (4.9 × 6.0 mm)Larger footprint and higher RDS(on) limit use in ultra-thin designs but offers better thermal derating above 70°C.Select when board space permits larger package and higher peak current (>5 A) is needed with external heatsinking.
AOB20322LRDS(on) = 75 mΩ @ –4.5 V; Qg = 4.5 nC; TDFN-8 (3.3 × 3.3 mm)Lower RDS(on) improves efficiency but higher Qg increases switching loss at >500 kHz; no AEC-Q101 rating.Select for non-automotive high-efficiency DC-DC post-regulation where AEC-Q101 is not required.

Compared with DMN2016LFG-7 and AOB20322L, DMP2100UCB9 uniquely combines AEC-Q101 qualification, 1.5 mm × 1.5 mm footprint, and sub-100 mΩ RDS(on) - making it the only option qualified for space-constrained automotive and medical battery systems requiring both reliability and miniaturization.

Availability

DMP2100UCB9 is available at Aetrix Electronics and suitable for battery protection, load switching, reverse polarity protection, and automotive body control applications requiring stable component supply across long-lifecycle programs.

Supply support for DMP2100UCB9 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.

The DMP2100UCB9 belongs to Diodes' LD-MOS ultra-low RDS(on) MOSFET product line, engineered specifically for space-constrained, high-efficiency battery management and load switching in portable and automotive electronics.

FAQ

What is the maximum continuous drain current for each channel at 70°C case temperature?

Each channel supports –2.1 A continuous drain current at TC = +70°C when mounted on FR-4 PCB with minimum recommended pad layout (Note 5). With enhanced 1-in² 2-oz copper (Note 6), this increases to –3.0 A - verified by thermal testing per JEDEC JESD51-2.

Does DMP2100UCB9 support synchronous rectification in buck converters?

No - DMP2100UCB9 is a P-channel enhancement-mode MOSFET intended for high-side switching, not synchronous rectification. Its VGS(th) and RDS(on) are optimized for load control, not low-VDS conduction in freewheeling paths. Use N-channel MOSFETs with gate drivers for synchronous rectification.

Can the shared source (SS) pad be left unconnected in single-channel operation?

No - the SS pad is internally bonded to both S1 and S2 terminals and must be soldered to PCB ground or the common source net. Leaving it unconnected risks thermal instability and violates JEDEC J-STD-020 reflow requirements for U-WLB packages.

Is the 3 kV HBM ESD rating applicable to all pins including drains and sources?

Yes - the 3 kV HBM rating applies to gate, source, and drain terminals per ANSI/ESDA/JEDEC JS-001-2017. This was validated using transmission-line pulse (TLP) testing on all pins, confirming robustness during automated PCB assembly and field handling.

DMP2100UCB9-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
9-UFBGA, WLBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual) Common Source
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
3A
Rds On (Max) @ Id, Vgs:
100mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
310pF @ 10V
Power - Max:
800mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-WLB1515-9

DMP2100UCB9-7 FAQ

1.How can I place an order for DMP2100UCB9-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP2100UCB9-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP2100UCB9-7 reliable?

The price and inventory of DMP2100UCB9-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2100UCB9-7 is usually 5 days.

3.What payment methods are accepted for DMP2100UCB9-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2100UCB9-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP2100UCB9-7?

DMP2100UCB9-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP2100UCB9-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP2100UCB9-7?

For technical support, including DMP2100UCB9-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2100UCB9-7 requirements.

6.How does Aetrix verify that DMP2100UCB9-7 is sourced from the original manufacturer or authorized distributors?

All DMP2100UCB9-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2100UCB9-7 meets industry standards.

7.What is the process for return or replacement of DMP2100UCB9-7?

All DMP2100UCB9-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2100UCB9-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP2100UCB9-7 part is unused and in its original packaging.

Return procedure for DMP2100UCB9-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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