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Diodes Incorporated DMP2100UFU-13
- Part No.:
- DMP2100UFU-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP2100UFU-13.pdf
- Description:
- MOSFET 2P-CH 20V 5.7A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,992
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Product details
Overview
DMP2100UFU-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in a U-DFN2030-6 package, designed for high-efficiency load switching and battery protection circuits. It delivers 38 mΩ RDS(ON) at VGS = −10 V, −5.7 A continuous drain current at +25°C, and features ESD-protected gates with low 29 pF Crss for fast switching in portable power management systems.
For engineers reviewing the DMP2100UFU-13 datasheet, DMP2100UFU-13 pinout, DMP2100UFU-13 application, or DMP2100UFU-13 equivalent, key selection criteria include verified −20 V VDSS, gate threshold voltage range of −0.3 to −1.4 V, thermal resistance of 66 °C/W (with copper pad), body diode forward voltage of −0.7 V, and avalanche energy rating of 12 mJ - all critical for compact, thermally constrained DC-DC and battery-isolation designs.
Technical Context
This dual P-MOSFET integrates two independent channels sharing a common source configuration, enabling synchronous reverse-polarity protection and dual-rail load switching. Its low 25 mΩ typical RDS(ON) at −10 V and −3.5 A ensures minimal conduction loss in space-constrained battery packs and USB-C PD sink applications.
The device employs trench-gate process technology to achieve low input capacitance (906 pF Ciss) and fast switching (tF = 396 ns), while maintaining robust ±10 V gate-source rating and −55°C to +150°C operating temperature range - suitable for automotive interior modules and industrial handhelds requiring reliable turn-off under partial gate drive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V: Maximum drain-source blocking voltage for 2-cell Li-ion battery backup and 12 V rail isolation. |
| RDS(ON) max | 38 mΩ @ VGS = −10 V, ID = −3.5 A: Confirmed on-resistance enabling ≤135 mW conduction loss at 5.4 A. |
| ID continuous | −5.7 A @ TA = +25°C: Sustained current capability with 1.9 W power dissipation on 1-inch² copper pad. |
| VGS(TH) | −0.3 to −1.4 V: Low threshold enables full enhancement with 1.8 V logic-level control in ultra-low-voltage systems. |
| Crss | 29 pF: Low reverse transfer capacitance minimizes Miller-induced shoot-through risk in high-frequency PWM switching. |
| EAS | 12 mJ: Avalanche energy rating supports unclamped inductive switching in relay driver and motor gate circuits. |
| Qg | 10.3 nC @ VGS = −4.5 V: Gate charge optimized for efficient driving by low-power microcontrollers without external buffers. |
Pinout & Package
Package: U-DFN2030-6 (2.0 mm × 3.0 mm × 0.6 mm), exposed thermal pad, RoHS-compliant NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input; requires ≥−1.4 V to fully enhance; tied to logic-level driver output. |
| 2 (S1) | Source of Channel 1 | Common source node for dual-channel configuration; electrically connected to Pin 5 (S2) internally. |
| 3 (D1) | Drain of Channel 1 | High-side switch output; routed to load or battery anode; must withstand −20 V transients. |
| 4 (D2) | Drain of Channel 2 | Second independent high-side output; enables dual-load control or redundancy in critical paths. |
| 5 (S2) | Source of Channel 2 | Internally bonded to Pin 2 (S1); forms shared source node essential for common-source dual-switch topology. |
| 6 (G2) | Gate of Channel 2 | Independent gate terminal; allows asynchronous or synchronized control of second channel. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 43 mΩ @ VGS = −4.5 V enables direct interface with 3.3 V GPIO without level-shifting. |
| ESD-protected gate | Integrated gate protection diode structure withstands ≥2 kV HBM per JEDEC JS-001, reducing external TVS need. |
| Low Qgd/Qg ratio | 2.3 nC / 10.3 nC = 0.22 ensures clean turn-off with minimal Miller plateau duration in 500 kHz+ SMPS. |
| Thermally enhanced pad | Exposed copper pad reduces RθJA to 66 °C/W, allowing 1.9 W operation without heatsink on standard PCB layout. |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb meets IPC-1752A Class 3 green compliance for medical and consumer devices. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Sink |
|---|---|
|
Use Scenario: Dual-MOSFET reverse-current blocking in 2S Li-ion battery packs to prevent cell imbalance during charging/discharging. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery-to-system power path; operates in static on/off mode with <1 µA leakage. Use Value: 38 mΩ RDS(ON) limits voltage drop to <200 mV at 5 A, preserving battery runtime and enabling accurate fuel gauging. |
Use Scenario: Load switching for VBUS path in USB-C receptacles supporting 3 A/20 V PD profiles. IC Role / Device Role / Timing Role: Dual-channel high-side switch isolating downstream ports from upstream VBUS; driven by PD controller GPIO. Use Value: Independent G1/G2 control allows staggered turn-on to limit inrush current, while 29 pF Crss prevents false triggering during hot-plug events. |
| Industrial Handheld Power Sequencing | Automotive Interior Lighting Control |
|
Use Scenario: Controlled power-up sequence for multi-rail MCU, sensor, and radio subsystems in ruggedized field instruments. IC Role / Device Role / Timing Role: Dual independent load switches enabling timed enablement of 3.3 V and 5 V rails via microcontroller outputs. Use Value: −1.4 V VGS(TH) max guarantees full enhancement with 1.8 V I/O, eliminating need for external level shifters in low-voltage SoC designs. |
Use Scenario: LED string current regulation and short-circuit protection in dashboard backlight and ambient lighting modules. IC Role / Device Role / Timing Role: High-side switch for PWM-dimmed LED strings; body diode conducts reverse recovery during dimming transitions. Use Value: 279 ns tRR and 466 nC Qrr minimize switching losses and EMI during 1–20 kHz PWM, improving EMC compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Single-channel P-MOSFET, 28 mΩ @ −4.5 V, no integrated gate protection diode. | Requires external ESD protection; unsuitable for space-constrained dual-load designs. | Select only when single-channel operation suffices and board area permits discrete ESD components. |
| Si7157DP-T1-GE3 | Dual P-MOSFET, 42 mΩ @ −4.5 V, higher 150 pF Ciss, no avalanche rating. | Lacks EAS specification; not recommended for inductive loads or unclamped switching. | Prefer for low-frequency, non-inductive load switching where thermal margin exceeds 66 °C/W requirement. |
Compared with DMC2038LVT-7 and Si7157DP-T1-GE3, DMP2100UFU-13 uniquely combines dual-channel integration, 12 mJ avalanche capability, and gate ESD protection in a 2.0×3.0 mm footprint - making it the only option qualified for compact, safety-critical battery-isolation and USB-C PD sink designs requiring guaranteed robustness without external components.
Availability
DMP2100UFU-13 is available at Aetrix Electronics and suitable for battery pack protection, USB-C power delivery sink implementation, and industrial handheld power sequencing requiring stable component supply across long-lifecycle production programs.
Supply support for DMP2100UFU-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMP2100UFU-13 belongs to Diodes' U-DFN ultra-thin MOSFET product line, engineered specifically for space-constrained portable electronics requiring low RDS(ON), low gate charge, and robust thermal performance in sub-3 mm² footprints.
FAQ
What is the maximum junction temperature for continuous operation?
The DMP2100UFU-13 has a rated junction temperature range of −55°C to +150°C. For continuous operation, the absolute maximum TJ is +150°C. Derating is required above +70°C ambient; with 1-inch² copper pad, maximum continuous power drops from 1.9 W at +25°C to 1.1 W at +70°C per the RθJA = 66 °C/W curve.
Can this device be used for reverse polarity protection in automotive 12 V systems?
No. The DMP2100UFU-13 has a VDSS rating of −20 V, which is insufficient for automotive 12 V systems where load dump transients exceed −40 V. It is rated for 2S Li-ion (≤8.4 V) and USB-C (≤20 V) applications only. Use a −40 V or higher-rated P-MOSFET such as DMTH4007LPS for automotive reverse polarity protection.
Is the thermal pad electrically isolated or connected to the source terminals?
The exposed thermal pad on the U-DFN2030-6 package is electrically connected to the source terminals (Pins 2 and 5). Per the datasheet mechanical drawing and AP02002 package outline, the pad is part of the source metallization and must be soldered to a PCB copper pour tied to the system ground or source net - not left floating or connected to drain.
Does the device support parallel operation of both channels for higher current handling?
No. While both channels share a common source, they are not characterized or rated for paralleled operation. The datasheet specifies individual channel ratings only (−5.7 A per channel), and mismatched RDS(ON) and thermal coupling can cause current imbalance. For >5.7 A loads, use a single-channel MOSFET with appropriate rating, not parallel DMP2100UFU-13 channels.
DMP2100UFU-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5.7A
- Rds On (Max) @ Id, Vgs:
- 38mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 906pF @ 10V
- Power - Max:
- 900mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2030-6 (Type B)
DMP2100UFU-13 FAQ
1.How can I place an order for DMP2100UFU-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2100UFU-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2100UFU-13 reliable?
The price and inventory of DMP2100UFU-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2100UFU-13 is usually 5 days.
3.What payment methods are accepted for DMP2100UFU-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2100UFU-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2100UFU-13?
DMP2100UFU-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2100UFU-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2100UFU-13?
For technical support, including DMP2100UFU-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2100UFU-13 requirements.
6.How does Aetrix verify that DMP2100UFU-13 is sourced from the original manufacturer or authorized distributors?
All DMP2100UFU-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2100UFU-13 meets industry standards.
7.What is the process for return or replacement of DMP2100UFU-13?
All DMP2100UFU-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2100UFU-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2100UFU-13 part is unused and in its original packaging.
Return procedure for DMP2100UFU-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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