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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP2109UVT-13

Name: DMP2109UVT-13
Brand: Diodes Incorporated
SKU: DMP2109UVT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP2109UVT-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMP2109UVT-13.pdf

Description:: MOSFET P-CH 20V 3.7A TSOT26

Quantity:: RFQ Add To RFQ list

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Inventory:8,139

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Product details

Overview

DMP2109UVT-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in TSOT26 package, rated for -20V V_DSS, 80mΩ R_DS(ON) @ V_GS = -4.5V, and -3.7A continuous drain current at T_A = +25°C. It serves as a low-side load switch in power management circuits requiring fast switching, low gate threshold, and compact footprint.

For engineers reviewing the DMP2109UVT-13 datasheet, DMP2109UVT-13 pinout, DMP2109UVT-13 application, or DMP2109UVT-13 equivalent, key selection criteria include verified R_DS(ON) at -2.5V/-4.5V gate drive, thermal resistance (R_θJA = 105°C/W on FR-4), body diode forward voltage (-0.7V typ), and TSOT26 mechanical compatibility with high-density PCB layouts.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining controlled gate charge (Q_g = 6.0nC) and fast switching (t_F = 9.5ns). Its -1.0V typical V_GS(TH) enables reliable turn-on with 2.5V–3.3V logic-level control signals.

The integrated body diode exhibits t_RR = 8.3ns and Q_RR = 2.0nC under I_F = -1.0A, supporting synchronous rectification and reverse-current protection in buck converters and OR-ing circuits without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-20V - Maximum blocking voltage before avalanche conduction; suitable for 12V rail switching and USB PD auxiliary power paths.
R_DS(ON)	80mΩ @ V_GS = -4.5V - Confirmed on-resistance enabling ≤280mW conduction loss at -3.7A DC load.
I_D (max)	-3.7A @ T_A = +25°C - Continuous current rating validated with 2oz copper FR-4 layout per datasheet Note 5.
C_iss	443pF - Input capacitance determining gate drive strength requirement for 1MHz+ switching frequencies.
Q_g	6.0nC - Total gate charge defining minimum driver output current needed for <100ns transition times.
V_GS(TH)	-0.45 to -1.0V - Gate threshold range ensuring full enhancement with 2.5V microcontroller GPIOs.
R_θJA	105°C/W - Junction-to-ambient thermal resistance on standard PCB; limits max power dissipation to 1.2W at ambient.

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9mm × 1.6mm × 0.6mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (D)	Drain	Main high-current path; connected to input supply rail in high-side switch configurations.
2 (D)	Drain	Internally paralleled with Pin 1 to reduce package inductance and improve current sharing.
3 (G)	Gate	Control terminal; requires <6.0nC charge for full turn-on; sensitive to ESD (±10V rating).
4 (S)	Source	Reference node for gate drive; tied to system ground in low-side switch topologies.
5 (D)	Drain	Third drain connection; enhances thermal and electrical performance via multi-terminal layout.
6 (D)	Drain	Fourth drain connection; minimizes voltage drop across bond wires during pulsed operation.

Key Features

Feature	Design Value
Low R_DS(ON) at low V_GS	110mΩ @ V_GS = -2.5V - Enables direct interface with 2.5V/3.3V logic without level-shifting circuitry.
Low input capacitance	C_iss = 443pF - Reduces gate drive power loss and simplifies driver selection for battery-powered systems.
Fast switching speed	t_F = 9.5ns - Supports >5MHz PWM in Class-D audio amplifiers and high-frequency DC-DC controllers.
Integrated body diode	V_SD = -0.7V typ - Provides bidirectional current capability for reverse-polarity protection and flyback energy recovery.
Green packaging	Halogen- and antimony-free molding compound (UL 94V-0) - Meets IPC-1752A material declaration requirements.

Applications

USB Power Delivery Switching

Smartphone Battery Protection

Use Scenario: Selective routing of 5V–20V power between USB-C ports and internal PMIC rails.

IC Role / Device Role: Low-side load switch controlling power delivery path with minimal voltage drop.

Use Value: 80mΩ R_DS(ON) limits voltage loss to <300mV at 3.7A, preserving PD negotiation margins and thermal headroom.

Use Scenario: Isolating main Li-ion battery from system during overvoltage, overtemperature, or short-circuit events.

IC Role / Device Role: Primary protection FET in battery management IC (BMS) secondary protection circuit.

Use Value: -1.0V V_GS(TH) ensures immediate turn-off when BMS pulls gate to ~0.5V, achieving sub-100ns fault response.

Industrial Sensor Node Power Gating

IoT Wireless Module Enable Control

Use Scenario: Cycling power to analog sensor front-ends (e.g., temperature, pressure) to extend battery life in field-deployed nodes.

IC Role / Device Role: High-efficiency enable switch placed between LDO output and sensor supply rail.

Use Value: 1.2W power dissipation rating supports 3.7A peak sensor startup currents without derating on standard PCBs.

Use Scenario: Enabling/disabling BLE/Wi-Fi modules during sleep/wake cycles in asset trackers and smart home devices.

IC Role / Device Role: Logic-controlled power gate between system PMIC and radio subsystem.

Use Value: 443pF C_iss and 6.0nC Q_g allow clean 3.3V GPIO switching with <1µs rise/fall times, minimizing RF interference.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2019LSD-13	R_DS(ON) = 90mΩ @ -4.5V; higher C_iss (520pF); same TSOT26 package.	Slightly higher switching loss; less suitable for >3MHz PWM due to increased gate charge.	Select if cost sensitivity outweighs 12% R_DS(ON) penalty and layout allows minor thermal margin reduction.
AO3401	R_DS(ON) = 85mΩ @ -4.5V; lower V_GS(TH) (-0.7V typ); SOT-23-3 package (3-pin, no multi-drain).	Reduced board area but higher thermal resistance (R_θJA = 150°C/W); unsuitable for >2.5A continuous loads.	Prefer for space-constrained designs where current demand stays below 2.2A and thermal pads are unavailable.

Compared with DMN2019LSD-13 and AO3401, DMP2109UVT-13 delivers the lowest R_DS(ON) in TSOT26, best gate charge efficiency, and superior thermal performance on standard FR-4-making it optimal for high-reliability, high-current power gating where footprint and efficiency are jointly constrained.

Availability

DMP2109UVT-13 is available at Aetrix Electronics and suitable for USB Power Delivery implementations, smartphone battery protection circuits, and industrial sensor node power gating requiring stable component supply and guaranteed long-term manufacturability.

Supply support for DMP2109UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMP2109UVT belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-voltage power switching in portable and battery-powered electronics where size, thermal performance, and logic-level compatibility are critical.

FAQ

What is the maximum safe operating junction temperature for DMP2109UVT-13?

The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation above this limit risks permanent parametric shift or catastrophic failure. Derating is required above +125°C ambient when dissipating >0.6W, based on the 105°C/W thermal resistance and recommended PCB layout.

Can DMP2109UVT-13 be used in high-side switch configurations?

Yes-it supports high-side switching when driven by a gate voltage ≥|V_GS(TH)| above the source potential. However, a dedicated high-side driver or charge pump is required to achieve full enhancement, since its V_GS(TH) range (-0.45V to -1.0V) mandates negative gate bias relative to source.

Does DMP2109UVT-13 have avalanche ruggedness rating?

No avalanche rating (E_AS) is specified in the datasheet. The device is not characterized for repetitive unclamped inductive switching. For circuits with inductive loads, external clamping (e.g., TVS diode or RC snubber) is mandatory to prevent drain-source voltage overshoot beyond -20V.

Is the TSOT26 package lead-free and RoHS compliant?

Yes-the DMP2109UVT-13 uses tin-finished terminals over copper leadframe and fully complies with EU RoHS Directive 2015/863/EU (RoHS 3), with no intentionally added lead, halogens, or antimony. Moisture sensitivity level is rated at Level 1 per J-STD-020.

DMP2109UVT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 4.5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 443 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMP2109UVT-13 FAQ

1.How can I place an order for DMP2109UVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP2109UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP2109UVT-13 reliable?

The price and inventory of DMP2109UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2109UVT-13 is usually 5 days.

3.What payment methods are accepted for DMP2109UVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2109UVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP2109UVT-13?

DMP2109UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP2109UVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP2109UVT-13?

For technical support, including DMP2109UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2109UVT-13 requirements.

6.How does Aetrix verify that DMP2109UVT-13 is sourced from the original manufacturer or authorized distributors?

All DMP2109UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2109UVT-13 meets industry standards.

7.What is the process for return or replacement of DMP2109UVT-13?

All DMP2109UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2109UVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP2109UVT-13 part is unused and in its original packaging.

Return procedure for DMP2109UVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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