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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP2109UVT-7

Name: DMP2109UVT-7
Brand: Diodes Incorporated
SKU: DMP2109UVT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP2109UVT-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMP2109UVT-7.pdf

Description:: MOSFET P-CH 20V 3.7A TSOT26

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Product details

Overview

DMP2109UVT-7 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in TSOT26 package, rated for -20V V_DSS, 80mΩ R_DS(ON) @ V_GS = -4.5V, and -3.7A continuous drain current at T_A = +25°C. It serves as a low-side load switch in power management circuits requiring fast switching, low gate threshold, and compact footprint-commonly used in USB port power control and battery protection modules.

For engineers reviewing the DMP2109UVT-7 datasheet, DMP2109UVT-7 pinout, DMP2109UVT-7 application, or DMP2109UVT-7 equivalent, key selection criteria include verified R_DS(ON) at -2.5V gate drive, thermal resistance under PCB-defined layout (R_θJA = 77°C/W with 1-inch² copper), body diode forward voltage (V_SD = -0.7V @ -1A), and gate charge (Q_g = 6.0nC) for PWM efficiency analysis.

Technical Context

This MOSFET employs planar trench-gate technology optimized for low R_DS(ON) while maintaining controlled gate charge and output capacitance. Its V_GS(TH) range of -0.45V to -1.0V enables direct interface with 2.5V/3.3V logic without level shifting, and its C_iss = 443pF / C_oss = 59pF supports high-frequency switching up to 1MHz.

The device integrates a monolithic body diode with t_RR = 8.3ns and Q_RR = 2.0nC, enabling synchronous rectification in buck converters and reverse-polarity protection where fast recovery is required. Thermal performance is defined for two mounting conditions: 105°C/W on minimal FR-4 pad and 77°C/W with extended copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-20V - Maximum drain-source blocking voltage before avalanche conduction; sets safe operating limit in 12V rail applications.
R_DS(ON)	80mΩ @ V_GS = -4.5V, ID = -2.8A - Confirmed on-resistance defining conduction loss in 3.3V-controlled load switches.
V_GS(TH)	-0.45V to -1.0V - Gate threshold range ensuring reliable turn-on with standard logic-level drivers.
Q_g	6.0nC - Total gate charge determining drive strength requirement and switching loss in PWM circuits.
C_iss	443pF - Input capacitance affecting gate driver slew rate and EMI generation during hard switching.
t_RR	8.3ns - Reverse recovery time of integrated body diode, critical for minimizing shoot-through in half-bridge configurations.
R_θJA	77°C/W - Junction-to-ambient thermal resistance with 1-inch² copper plate, used to calculate max ambient temperature for 1.0W dissipation.

Pinout & Package

Package: TSOT26 - ultra-thin surface-mount package (2.9mm × 1.6mm × 0.6mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (D)	Drain	Main current path from source to load; connected to high-side of switched load or ground return in high-side configuration.
2 (D)	Drain	Internally tied to Pin 1; doubles current-carrying capacity and improves thermal spreading to PCB copper.
3 (G)	Gate	Control terminal; requires <1.0V over V_GS(TH) for full enhancement; sensitive to ESD (±100nA leakage at ±8V).
4 (S)	Source	Reference node for gate drive and current return path; ties to system ground or positive rail depending on topology.
5 (D)	Drain	Third drain connection; enhances thermal and electrical robustness in high-current DC switching.
6 (D)	Drain	Fourth drain connection; provides lowest-inductance path to PCB plane for minimizing switching ringing.

Key Features

Feature	Design Value
Low R_DS(ON) at low V_GS	110mΩ @ V_GS = -2.5V enables use with 2.5V microcontroller GPIOs without external level shifters.
Low gate threshold voltage	V_GS(TH) down to -0.45V ensures strong enhancement even with weak drive sources or elevated temperature drift.
Low input capacitance	C_iss = 443pF reduces gate drive power and allows faster switching with modest driver ICs (e.g., TC4427).
Enhanced thermal performance	R_θJA = 77°C/W with 1-inch² copper enables 1.0W continuous operation at +70°C ambient in space-constrained designs.
Integrated body diode	V_SD = -0.7V @ -1A and t_RR = 8.3ns support efficient freewheeling in DC-DC converters and reverse-current blocking.

Applications

USB Power Switching

Battery Protection Circuit

Use Scenario: Controlling power delivery to downstream USB peripherals in portable devices with strict inrush current limits.

IC Role / Device Role: Low-side P-channel MOSFET acting as hot-swap controller, enabling/disabling VBUS path based on host command.

Use Value: 80mΩ R_DS(ON) minimizes voltage drop (<300mV @ 3.7A), preserving USB 2.0 compliance; low Q_g ensures clean turn-on edge without overshoot.

Use Scenario: Isolating Li-ion battery cells from charging/discharging paths during fault conditions (overvoltage, overtemperature).

IC Role / Device Role: Primary discharge FET in protection IC reference design, placed between battery negative and system ground.

Use Value: -20V rating safely handles cell stack transients; -1.0V V_GS(TH) max ensures full turn-off when protection IC pulls gate to ~0V.

Load Switch for IoT Sensors

Reverse Polarity Protection

Use Scenario: Enabling/disabling power to always-on sensor subsystems (e.g., motion, humidity) in battery-powered edge nodes.

IC Role / Device Role: High-efficiency load switch managed by ultra-low-power MCU with 3.3V I/O.

Use Value: 110mΩ R_DS(ON) @ -2.5V gate drive delivers >98% efficiency at 100mA load; TSOT26 footprint saves board area vs. SOT-23.

Use Scenario: Preventing damage from accidental reverse battery insertion in handheld medical or industrial instruments.

IC Role / Device Role: P-channel MOSFET configured in common-source orientation between input supply and system VCC rail.

Use Value: Body diode blocks reverse current; low V_GS(TH) ensures immediate conduction upon correct polarity; 1.2A body diode rating handles brief surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2011UFD-7	R_DS(ON) = 60mΩ @ -4.5V but higher Q_g = 9.5nC; same TSOT26 package.	Higher switching loss at >500kHz; better for static load switching than high-frequency PWM.	Select when lower conduction loss outweighs gate drive capability constraints.
AO3401	R_DS(ON) = 85mΩ @ -4.5V; V_GS(TH) = -0.7V to -1.3V; SOT-23 package (larger R_θJA = 150°C/W).	Limited to ≤0.5W continuous dissipation; less suitable for sustained 3A loads without heatsinking.	Choose only for cost-sensitive, low-power applications where thermal margin is ample.

Compared with DMN2011UFD-7 and AO3401, DMP2109UVT-7 offers optimal balance of low gate charge (6.0nC), tight V_GS(TH) distribution (-0.45V to -1.0V), and proven 77°C/W thermal performance-making it preferred for compact, thermally constrained 3.3V-controlled power switches.

Availability

DMP2109UVT-7 is available at Aetrix Electronics and suitable for USB power switching, battery protection circuits, IoT sensor load control, and reverse polarity protection requiring stable component supply across production volumes.

Supply support for DMP2109UVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.

DMP2109UVT-7 belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-voltage power switching in space-constrained consumer, computing, and industrial systems.

FAQ

What is the maximum continuous drain current at 70°C ambient?

At T_A = +70°C with 1-inch² copper pad, the DMP2109UVT-7 supports -2.9A continuous drain current (V_GS = -4.5V) and -2.5A (V_GS = -2.5V), per the derating curve in Section 2 of DS41246 Rev. 2–2. This reflects thermal limitation-not SOA boundary-and assumes no additional airflow or heatsinking.

Can this MOSFET be used in a high-side switch configuration?

Yes-the DMP2109UVT-7 is a P-channel device inherently suited for high-side switching. Its -20V V_DSS and -1.0V maximum V_GS(TH) allow direct gate control from a microcontroller GPIO via a simple resistor divider or dedicated high-side driver, provided gate voltage remains ≥2V below source potential.

Is the body diode suitable for synchronous rectification?

No-the body diode is optimized for reverse polarity protection and freewheeling, not synchronous rectification. Its t_RR = 8.3ns and Q_RR = 2.0nC are acceptable for low-frequency (<100kHz) buck converters, but lack the low forward voltage and ultra-fast recovery needed for high-efficiency synchronous topologies above 500kHz.

Does the TSOT26 package require special soldering profile considerations?

Yes-TSOT26 has fine pitch (0.95mm) and thin profile (0.6mm). Reflow must follow J-STD-020 Level 1 profile: peak temperature ≤260°C, time above 217°C ≤60 seconds, and ramp rate ≤3°C/sec. Diodes' recommended pad layout (X = 0.70mm, Y = 1.00mm, C = 0.95mm) must be strictly followed to prevent tombstoning or voiding.

DMP2109UVT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 4.5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 443 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMP2109UVT-7 FAQ

1.How can I place an order for DMP2109UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP2109UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP2109UVT-7 reliable?

The price and inventory of DMP2109UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2109UVT-7 is usually 5 days.

3.What payment methods are accepted for DMP2109UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2109UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP2109UVT-7?

DMP2109UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP2109UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP2109UVT-7?

For technical support, including DMP2109UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2109UVT-7 requirements.

6.How does Aetrix verify that DMP2109UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMP2109UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2109UVT-7 meets industry standards.

7.What is the process for return or replacement of DMP2109UVT-7?

All DMP2109UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2109UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP2109UVT-7 part is unused and in its original packaging.

Return procedure for DMP2109UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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