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Diodes Incorporated DMP2109UVTQ-13
- Part No.:
- DMP2109UVTQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMP2109UVTQ-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V TSOT26 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:9,103
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Product details
Overview
DMP2109UVTQ from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -20V VDSS, 80 mΩ RDS(ON) at VGS = -4.5V, and -3.7A continuous drain current at TA = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive power management and interfacing switches in space-constrained PCB layouts.
For engineers reviewing the DMP2109UVTQ datasheet, DMP2109UVTQ pinout, DMP2109UVTQ application, or DMP2109UVTQ equivalent, this page delivers verified electrical parameters, TSOT26 package layout details, automotive-grade reliability context, and real-world switching performance data including Qg = 6.0 nC and tF = 9.5 ns.
Technical Context
This MOSFET operates as a low-side load switch with gate threshold voltage VGS(TH) ranging from -0.45 V to -1.0 V, enabling direct interface with 3.3 V and 5 V logic controllers. Its low input capacitance (Ciss = 443 pF) and fast switching (tD(OFF) = 24.5 ns) support high-frequency PWM control in DC-DC converters and LED drivers.
The device features an integrated body diode with VSD = -0.7 V at IS = -1 A and reverse recovery charge QRR = 2.0 nC, supporting synchronous rectification and flyback snubbing. Thermal resistance RθJA is 105 °C/W on standard FR-4 (2 oz Cu), confirming suitability for thermally constrained automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20 V - Maximum blocking voltage for 12 V automotive rail protection and load switching |
| RDS(ON) | 80 mΩ @ VGS = -4.5 V - Enables <100 mW conduction loss at 3.7 A, critical for thermal budget in compact modules |
| ID (max) | -3.7 A @ TA = +25°C - Supports sustained current in infotainment power rails and ECU peripheral switching |
| Qg | 6.0 nC - Low gate charge reduces driver power demand and enables efficient 100–500 kHz switching |
| tF | 9.5 ns - Fast fall time minimizes switching overlap loss in half-bridge configurations |
| TJ range | -55°C to +150°C - Validated operation across full automotive ambient and junction temperature envelope |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 mm × 1.6 mm × 0.6 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5 (D) | Drain | Parallel-connected drain terminals reduce package inductance and improve current sharing in high-di/dt applications |
| 3 (G) | Gate | Single gate input with low Ciss (443 pF) and RG = 8.5 Ω supports clean edge control without external gate resistor |
| 6 (S) | Source | Source terminal referenced to PCB ground plane; used for current sensing and feedback in high-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 110 mΩ @ VGS = -2.5 V enables reliable turn-on from 3.3 V microcontrollers without level-shifting |
| AEC-Q101 qualification | Validated for automotive use per stress test requirements including HTOL, TC, HAST, and UHAST |
| Low gate threshold voltage | VGS(TH) down to -0.45 V ensures robust turn-on margin under cold-cranking (6 V battery) conditions |
| Integrated body diode | VSD = -0.7 V at -1 A supports freewheeling in buck regulators and motor drive flyback paths |
Applications
| Automotive Body Control Module (BCM) | Infotainment Power Sequencing |
|---|---|
|
Use Scenario: Controlling door lock actuators, mirror heaters, and interior lighting loads in 12 V systems. IC Role / Device Role / Timing Role: Low-side P-channel switch managing up to 3.7 A resistive/inductive loads with controlled turn-off slew rate. Use Value: 80 mΩ RDS(ON) limits power dissipation to ≤1.04 W at full load, eliminating need for heatsinking in plastic enclosures. |
Use Scenario: Sequenced enable/disable of display backlight, audio amplifier, and USB-C PD controller rails. IC Role / Device Role / Timing Role: Power rail switch with fast tF = 9.5 ns and low Qg = 6.0 nC for precise timing-controlled power-up/down. Use Value: Gate threshold of -0.45 V ensures reliable activation even during low-battery brownout (≤7 V), preventing system hang during cold start. |
| Engine Control Unit (ECU) Sensor Biasing | ADAS Camera Module Power Switching |
|
Use Scenario: Providing regulated bias voltage to oxygen sensors and knock sensors requiring stable 5 V or 3.3 V reference. IC Role / Device Role / Timing Role: High-side switch (with external level shifter) delivering clean, ripple-free bias with minimal dropout. Use Value: Low Coss = 59 pF and Crss = 47 pF minimize capacitive coupling noise into sensitive analog sensor inputs. |
Use Scenario: Isolating camera image sensor and ISP power domains to meet ASIL-B functional safety requirements. IC Role / Device Role / Timing Role: Safety-critical load switch with AEC-Q101 qualification and traceable PPAP documentation. Use Value: Junction temperature rating up to +150°C ensures uninterrupted operation inside sealed camera housings exposed to solar loading. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2012LFG-7 | RDS(ON) = 100 mΩ @ VGS = -4.5 V; higher Qg = 8.5 nC; same TSOT26 package | Higher conduction and switching losses limit use to lower-current (<2.5 A), lower-frequency (<100 kHz) applications | Select when cost sensitivity outweighs efficiency needs and thermal headroom is available |
| SI2301BDS-T1-GE3 | RDS(ON) = 90 mΩ @ VGS = -4.5 V; no AEC-Q101 qualification; higher VGS(TH) (-1.0 V min) | Not approved for automotive production; unsuitable for PPAP-driven programs or safety-critical subsystems | Acceptable only for non-automotive industrial prototypes or consumer-grade designs |
Compared with DMN2012LFG-7 and SI2301BDS-T1-GE3, DMP2109UVTQ delivers superior thermal performance (RθJA = 105 °C/W vs. ≥120 °C/W), tighter gate threshold distribution, and documented automotive qualification-making it the only choice for production BCM and ADAS power switching where reliability and compliance are mandatory.
Availability
DMP2109UVTQ is available at Aetrix Electronics and suitable for automotive body control modules, infotainment power sequencing, and ADAS camera module switching requiring stable component supply, full traceability, and long-term lifecycle assurance.
Supply support for DMP2109UVTQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for AEC-Q101 compliance, high-reliability 12 V vehicle networks, and thermally demanding under-hood and cabin environments.
FAQ
Is DMP2109UVTQ suitable for high-side switching configurations?
Yes, DMP2109UVTQ can be used in high-side configurations when paired with a gate driver capable of providing VGS ≤ -4.5 V relative to the source node. Its -20 V VDSS rating and low RDS(ON) support 12 V rail switching. The TSOT26 package's exposed drain pads aid thermal transfer in such layouts.
What is the maximum allowable pulsed drain current for DMP2109UVTQ?
The datasheet specifies IDM = -20 A for 10 μs pulses at 1% duty cycle. This value assumes proper PCB thermal design (2 oz copper, minimum pad layout). Sustained operation above -3.7 A requires derating based on ambient temperature and board thermal resistance.
Does DMP2109UVTQ require external gate protection?
No external gate protection is required under normal operation due to its ±10 V VGS rating and built-in ESD protection. However, in noisy automotive environments with >100 V transients, a 10 kΩ series gate resistor and 10 V Zener clamp to source are recommended for robustness.
How does the body diode performance impact flyback energy handling?
The body diode has VSD = -0.7 V at -1 A and tRR = 8.3 ns, enabling efficient flyback conduction in inductive loads. Its QRR = 2.0 nC minimizes reverse recovery loss, making it suitable for synchronous rectification in buck converters operating up to 500 kHz.
DMP2109UVTQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6 nC @ 4.5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 443 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMP2109UVTQ-13 FAQ
1.How can I place an order for DMP2109UVTQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2109UVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2109UVTQ-13 reliable?
The price and inventory of DMP2109UVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2109UVTQ-13 is usually 5 days.
3.What payment methods are accepted for DMP2109UVTQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2109UVTQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2109UVTQ-13?
DMP2109UVTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2109UVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2109UVTQ-13?
For technical support, including DMP2109UVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2109UVTQ-13 requirements.
6.How does Aetrix verify that DMP2109UVTQ-13 is sourced from the original manufacturer or authorized distributors?
All DMP2109UVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2109UVTQ-13 meets industry standards.
7.What is the process for return or replacement of DMP2109UVTQ-13?
All DMP2109UVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2109UVTQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2109UVTQ-13 part is unused and in its original packaging.
Return procedure for DMP2109UVTQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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