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Diodes Incorporated DMP2110UFDB-13
- Part No.:
- DMP2110UFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP2110UFDB-13.pdf
- Description:
- MOSFET 2P-CH 20V 3.2A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,632
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Product details
Overview
DMP2110UFDB-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for -20V VDSS, 75mΩ RDS(ON) at VGS = -4.5V, and -3.2A continuous drain current at TA = +25°C. It serves as a compact, low-profile load switch in portable power adaptors and battery-powered systems requiring high-efficiency power management.
For engineers reviewing the DMP2110UFDB-13 datasheet, DMP2110UFDB-13 pinout, DMP2110UFDB-13 application, or DMP2110UFDB-13 equivalent, key selection criteria include its dual-channel P-MOSFET topology, 0.6mm max height, 4mm² PCB footprint, low input capacitance (443pF), and thermal resistance of 110°C/W under enhanced layout conditions.
Technical Context
This dual P-channel MOSFET integrates two matched enhancement-mode transistors in a single ultra-small U-DFN2020-6 (Type B) package with exposed thermal pad. Its gate threshold voltage range (-0.45V to -1.0V) enables reliable turn-on with low-voltage logic control (e.g., 1.8V/2.5V/3.3V GPIO), while low RDS(ON) at VGS = -2.5V (110mΩ) supports operation in partial-gate-drive scenarios.
The device features low dynamic parameters: 6.0nC total gate charge at VGS = -4.5V, 47pF reverse transfer capacitance, and fast switching times (tD(ON) = 4.0ns, tF = 9.5ns), making it suitable for high-frequency load switching where conduction loss and switching loss must both be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Maximum drain-source blocking voltage for safe operation in 12V rail and USB PD auxiliary power paths. |
| RDS(ON) @ VGS = -4.5V | 75mΩ - Enables ≤240mW conduction loss at 1.8A, critical for thermally constrained portable designs. |
| ID (max, TA = +25°C) | -3.2A - Continuous current rating per channel under standard FR-4 board conditions with recommended copper area. |
| Ciss | 443pF - Low input capacitance reduces gate drive power and improves switching efficiency above 1MHz. |
| Qg @ VGS = -4.5V | 6.0nC - Low gate charge allows fast turn-on with minimal driver strength (e.g., microcontroller GPIO without buffer). |
| RθJA (enhanced layout) | 110°C/W - Thermal performance achievable with 1-inch² copper pour, enabling 1.14W power dissipation at ambient. |
| Package | U-DFN2020-6 (Type B) - 2.0×2.0×0.6mm outline with bottom-side thermal pad for PCB-level heat extraction. |
Pinout & Package
U-DFN2020-6 (Type B) is a 2.0mm × 2.0mm × 0.6mm leadless package with six terminals and an exposed thermal pad (Pin 6). The package uses NiPdAu-plated copper leadframe and complies with J-STD-020 Moisture Sensitivity Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 | Channel 1 source connection; tied to system ground or common return path in high-side switch configuration. |
| 2 | Gate 1 | Control input for Channel 1; requires negative bias relative to Source 1 for turn-on (e.g., MCU GPIO pulled down). |
| 3 | Drain 1 | Power output node for Channel 1; connects to load (e.g., USB port VBUS line or PMIC enable path). |
| 4 | Drain 2 | Power output node for Channel 2; electrically isolated from Drain 1; supports independent dual-load switching. |
| 5 | Gate 2 | Control input for Channel 2; independently driven to enable asynchronous or synchronized dual-channel control. |
| 6 | Source 2 / Thermal Pad | Channel 2 source and primary thermal interface; must be soldered to large PCB copper area for thermal performance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Enables high-side load switching without external level-shifting circuitry when paired with open-drain or active-low drivers. |
| 75mΩ RDS(ON) @ -4.5V | Reduces I²R losses by >35% vs. comparable 100mΩ devices, extending battery runtime in portable applications. |
| 0.6mm max height | Meets strict Z-height requirements for ultra-thin consumer electronics (e.g., wireless earbuds, smartwatches). |
| 443pF Ciss & 6.0nC Qg | Permits direct GPIO driving at ≥500kHz switching frequency with <10mA peak gate current requirement. |
| RoHS 3 & Halogen-free | Complies with IPC-1752A Class 3 material declarations and automotive PPAP documentation requirements. |
Applications
| USB-C Power Delivery Switching | Smartphone Battery Protection |
|---|---|
Use Scenario: Dual-path VBUS routing in USB-C receptacles supporting alternate modes and power role swapping. IC Role / Device Role / Timing Role: High-side P-MOSFET switch controlling 5V/9V/15V/20V power delivery to Type-C port, with independent gate control for source/sink reconfiguration. Use Value: 75mΩ RDS(ON) limits voltage drop to <150mV at 2A, preserving PD negotiation accuracy and maintaining tight VBUS regulation. | Use Scenario: Overvoltage and reverse-current protection between main Li-ion cell and system power rails during charging/discharging cycles. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (using one channel per FET) implementing bidirectional blocking with <1μA leakage (IDSS ≤ -1.0μA). Use Value: Low 110mΩ RDS(ON) at VGS = -2.5V ensures reliable turn-on from battery monitor IC outputs, even at end-of-discharge voltages (~2.8V). |
| Wireless Earbud Charging Case | IoT Sensor Node Power Gating |
Use Scenario: Independent power gating of Bluetooth SoC, flash memory, and charging IC inside compact charging case PCB. IC Role / Device Role / Timing Role: Dual-channel load switch enabling zero-quiescent-current shutdown of subsystems via separate MCU GPIOs. Use Value: 4mm² footprint saves >60% board area vs. discrete SO-8 solutions, critical for sub-20cm³ form factors. | Use Scenario: Duty-cycled power delivery to environmental sensors (e.g., temperature/humidity) in battery-operated LPWAN nodes. IC Role / Device Role / Timing Role: Low-leakage P-MOSFET switch isolating sensor supply during sleep mode, controlled by RTC-interrupt-driven GPIO. Use Value: IDSS ≤ -1.0μA ensures <10nA total off-state current per channel, extending 10-year battery life targets in ISO/IEC 14543-3-10 deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Single-channel, 20V, 42mΩ @ -4.5V, SOT-26 package (3.0×2.8×1.1mm) | Larger footprint, higher height, no dual integration - requires two devices for same functionality | Select when board space permits larger package and discrete layout simplifies thermal isolation. |
| SI2301CDS-T1-GE3 | Single-channel, 20V, 115mΩ @ -4.5V, SOT-23 package (2.9×1.6×1.1mm) | Higher RDS(ON), no thermal pad, lower current rating (-2.7A), not dual | Choose only for cost-sensitive, low-current (<1.5A) applications where dual-channel integration is unnecessary. |
Compared with DMC2038LVT-7 and SI2301CDS-T1-GE3, the DMP2110UFDB-13 delivers integrated dual-channel control in a 4mm² footprint with superior thermal performance (110°C/W vs. ≥200°C/W for SOT packages) and lower conduction loss - essential for space-constrained, high-efficiency portable power systems.
Availability
DMP2110UFDB-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, smartphone battery protection circuits, and wireless earbud charging cases requiring stable component supply and long-term lifecycle support.
Supply support for DMP2110UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, energy-efficient components for power management, signal integrity, and protection applications.
The DMP2110UFDB belongs to Diodes' U-DFN ultra-compact MOSFET product line, engineered specifically for space-constrained portable electronics where low RDS(ON), minimal height, and dual-channel integration reduce bill-of-materials count and PCB area.
FAQ
What is the maximum operating junction temperature for DMP2110UFDB-13?
The DMP2110UFDB-13 has a specified operating junction temperature range of -55°C to +150°C. Its absolute maximum TJ is +150°C, validated under steady-state conditions with proper PCB copper area (1-inch²) and ambient temperatures up to +70°C. Derating is required above TA = +25°C per the RθJA = 110°C/W curve.
Can DMP2110UFDB-13 be used in automotive applications?
The standard DMP2110UFDB-13 is not AEC-Q101 qualified. However, Diodes offers the automotive-grade variant DMP2110UFDBQ, which meets AEC-Q101 stress testing requirements and is manufactured in IATF 16949-certified facilities. For automotive use, DMP2110UFDBQ must be selected and sourced separately.
How is thermal performance affected by PCB layout for this U-DFN2020-6 device?
Thermal resistance drops from 153°C/W (standard FR-4, 2oz Cu) to 110°C/W when using a 1-inch² copper pour connected to Pin 6 (thermal pad). Solder mask opening over the pad, ≥6 thermal vias (0.3mm diameter) to inner ground plane, and minimum 0.5mm solder paste stencil thickness are required to achieve the 110°C/W rating per datasheet Note 6.
Does DMP2110UFDB-13 require gate resistors for typical GPIO switching?
No external gate resistor is required when driven directly by 3.3V or 5V microcontroller GPIOs with ≤20mA sink capability. The device's 6.0nC Qg and 8.5Ω Rg allow full turn-on in <100ns. A 10Ω series resistor may be added only if EMI reduction or ringing suppression is observed on the gate trace during layout validation.
DMP2110UFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 3.2A (Ta)
- Rds On (Max) @ Id, Vgs:
- 75mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 443pF @ 10V
- Power - Max:
- 820mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMP2110UFDB-13 FAQ
1.How can I place an order for DMP2110UFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2110UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2110UFDB-13 reliable?
The price and inventory of DMP2110UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2110UFDB-13 is usually 5 days.
3.What payment methods are accepted for DMP2110UFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2110UFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2110UFDB-13?
DMP2110UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2110UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2110UFDB-13?
For technical support, including DMP2110UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2110UFDB-13 requirements.
6.How does Aetrix verify that DMP2110UFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMP2110UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2110UFDB-13 meets industry standards.
7.What is the process for return or replacement of DMP2110UFDB-13?
All DMP2110UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2110UFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2110UFDB-13 part is unused and in its original packaging.
Return procedure for DMP2110UFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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