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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMP2110UFDB-7

Name: DMP2110UFDB-7
Brand: Diodes Incorporated
SKU: DMP2110UFDB-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP2110UFDB-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-UDFN Exposed Pad

Datasheet:: DMP2110UFDB-7.pdf

Description:: MOSFET 2P-CH 20V 3.2A 6UDFN

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Inventory:8,115

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Product details

Overview

DMP2110UFDB-7 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for -20V V_DSS, 75 mΩ R_DS(ON) @ V_GS = -4.5V, and -3.2A continuous drain current at T_A = +25°C. It serves as a compact, low-profile load switch in portable power adaptors and battery-powered systems requiring high-efficiency power management.

For engineers reviewing the DMP2110UFDB-7 datasheet, DMP2110UFDB-7 pinout, DMP2110UFDB-7 application, or DMP2110UFDB-7 equivalent, key selection criteria include its dual-channel P-MOSFET topology, ultra-low 4 mm² PCB footprint, 0.6 mm max height, and verified R_DS(ON) performance across -55°C to +150°C junction temperature range.

Technical Context

This device integrates two identical P-channel MOSFETs in a single U-DFN2020-6 (Type B) package with shared thermal path and independent gate terminals. Its gate threshold voltage (V_GS(TH)) ranges from -0.45 V to -1.0 V, enabling robust turn-on control with logic-level compatible drive down to -2.5 V.

The MOSFET exhibits low dynamic parameters: C_iss = 443 pF, C_oss = 59 pF, and Q_g = 6.0 nC @ V_GS = -4.5 V, supporting fast switching with t_D(ON) = 4.0 ns and t_F = 9.5 ns under standard test conditions (V_DS = -10 V, R_g = 6 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-20 V - Maximum drain-source blocking voltage for safe operation in 12 V rail and USB PD auxiliary power paths
R_DS(ON)	75 mΩ @ V_GS = -4.5 V - Enables ≤225 mW conduction loss at 1.7 A per channel in portable load-switch designs
I_D (max)	-3.2 A @ T_A = +25°C - Supports dual-channel 3 A-class power routing in space-constrained DC-DC output stages
C_iss	443 pF - Low input capacitance reduces gate drive power and improves EMI profile in high-frequency switching
Q_g	6.0 nC @ V_GS = -4.5 V - Allows clean 10 ns-scale edge transitions using standard 5 V GPIO or dedicated gate drivers
R_θJA	110 °C/W (with 1-inch² copper) - Thermal performance enables 1.14 W dissipation without forced airflow in handheld enclosures
T_J Range	-55°C to +150°C - Qualified for extended industrial and automotive-adjacent environments including battery management modules

Pinout & Package

Package: U-DFN2020-6 (Type B), 2.0 mm × 2.0 mm × 0.6 mm, no lead, RoHS-compliant, halogen/antimony-free "Green" molding compound (UL 94V-0). Exposed thermal pad on bottom surface for enhanced heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate 1 (G1)	Independent control input for first P-MOSFET channel; requires negative bias relative to source for turn-on
2	Source 1 (S1)	Common source node for Channel 1; electrically tied to exposed thermal pad in typical layout
3	Drain 1 (D1)	Power output terminal for Channel 1; routed to load side of high-side switch configuration
4	Drain 2 (D2)	Power output terminal for Channel 2; symmetrical to D1 for dual-load or parallel-current applications
5	Source 2 (S2)	Common source node for Channel 2; internally isolated but typically connected to same supply rail as S1
6	Gate 2 (G2)	Independent control input for second P-MOSFET channel; supports asynchronous or mirrored switching control

Key Features

Feature	Design Value
Dual P-channel topology	Two matched enhancement-mode MOSFETs in one 2.0×2.0 mm package enable compact dual-load switching without discrete pairing
Low R_DS(ON) @ low V_GS	110 mΩ @ V_GS = -2.5 V allows reliable operation from 3.3 V logic rails with minimal voltage headroom penalty
Ultra-small footprint	4 mm² PCB area saves >60% board space vs. SO-8 or TSOP-6 equivalents in wearables and IoT sensor nodes
Low-profile construction	0.6 mm maximum height permits integration beneath batteries or into slim bezel assemblies in portable medical devices
Thermally optimized layout	Exposed thermal pad and 110 °C/W R_θJA (with 1-inch² copper) support sustained 1.14 W dissipation without heatsinking

Applications

USB-C Power Delivery Switching

Smartphone Battery Protection

Use Scenario: Bidirectional power path control in USB-C port controllers managing sink/source role negotiation.

IC Role / Device Role / Timing Role: Dual high-side P-MOSFET switch isolating VBUS from system rails during fault conditions or mode changes.

Use Value: 75 mΩ R_DS(ON) limits voltage drop to <120 mV at 1.6 A, preserving PD 3.0 voltage compliance while enabling sub-10 ns fault response.

Use Scenario: Overvoltage/overcurrent protection circuitry between Li-ion cell and system PMIC in smartphones.

IC Role / Device Role / Timing Role: Dual-channel reverse-polarity and short-circuit isolation switch placed upstream of charging IC inputs.

Use Value: Matched channel characteristics ensure balanced current sharing; 150°C T_J(max) withstands brief surge events during hot-plug insertion.

Wireless Earbud Charging Case

Industrial Sensor Node Power Gating

Use Scenario: Load switching for charging circuitry and Bluetooth SoC power domains inside compact earbud cases.

IC Role / Device Role / Timing Role: Independent gating of 5 V input path and 3.3 V system rail using separate G1/G2 control signals.

Use Value: 4 mm² footprint fits within 12 mm × 12 mm PCB real estate; 0.6 mm height avoids interference with battery curvature.

Use Scenario: Duty-cycled power delivery to LoRaWAN transceivers and analog front-ends in battery-operated environmental monitors.

IC Role / Device Role / Timing Role: Low-quiescent-power high-side switch enabling microamp-level sleep current when peripherals are disabled.

Use Value: Gate leakage <±100 nA ensures <1 µA total off-state current per channel, extending 10-year battery life targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038LVT-7	Single-channel P-MOSFET, same U-DFN2020-6 package, 60 mΩ @ -4.5 V, but lacks dual topology	Requires two devices for dual-load function; increases layout area and BOM count	Select only if channel independence or timing skew between switches is not required
SI2301BDS-T1-GE3	Single P-MOSFET in SOT-23, 115 mΩ @ -4.5 V, higher R_DS(ON), larger 2.9 mm × 1.6 mm footprint	Not pin-compatible; unsuitable for space-constrained dual-switch layouts	Consider only for legacy SOT-23 designs where re-layout is impractical

Compared with DMC2038LVT-7 and SI2301BDS-T1-GE3, DMP2110UFDB-7 uniquely delivers dual-channel functionality in minimal area, enabling true space and component count savings-critical for next-generation portable electronics where board area is premium and thermal density must be tightly managed.

Availability

DMP2110UFDB-7 is available at Aetrix Electronics and suitable for USB-C power delivery modules, smartphone battery protection circuits, wireless earbud charging cases, and industrial sensor node power gating requiring stable component supply and long-term lifecycle assurance.

Supply support for DMP2110UFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMP2110UFDB-7 belongs to Diodes' high-density power MOSFET product line, engineered specifically for miniaturized, high-efficiency load switching in battery-powered consumer and industrial equipment.

FAQ

What is the maximum allowable gate-source voltage for DMP2110UFDB-7?

The absolute maximum gate-source voltage (V_GS) is ±12 V, as specified in the Maximum Ratings table. Operation beyond this rating risks irreversible oxide damage. For reliable logic-level drive, V_GS should be maintained between -4.5 V and -8 V to ensure full enhancement while staying within safe margins.

Does DMP2110UFDB-7 include integrated ESD protection?

No integrated ESD protection diodes are specified in the datasheet. The device meets HBM ESD classification per JESD22-A114 (not explicitly rated), but external TVS or RC filtering is recommended on gate lines in systems exposed to handling or connector hot-plug events, especially given its 0.6 mm profile and sensitive gate oxide.

Can both channels be paralleled to increase current capacity?

Paralleling is not recommended due to mismatch in V_GS(TH) (–0.45 V to –1.0 V) and R_DS(ON) tolerance, which may cause current imbalance and thermal runaway. Each channel is characterized independently; use derated single-channel ratings (–2.6 A at T_A = +70°C) for sustained operation.

Is the exposed thermal pad electrically connected to any internal node?

Yes-the exposed thermal pad is internally connected to the source terminals (S1 and S2). It must be soldered to a PCB copper pour tied to the common source net to ensure mechanical stability, thermal performance, and electrical integrity. Floating or grounded pads will degrade R_θJA and risk reliability failure.

DMP2110UFDB-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 3.2A (Ta)

Rds On (Max) @ Id, Vgs:: 75mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12.7nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:: 443pF @ 10V

Power - Max:: 820mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type B)

DMP2110UFDB-7 FAQ

1.How can I place an order for DMP2110UFDB-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP2110UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP2110UFDB-7 reliable?

The price and inventory of DMP2110UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2110UFDB-7 is usually 5 days.

3.What payment methods are accepted for DMP2110UFDB-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2110UFDB-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP2110UFDB-7?

DMP2110UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP2110UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP2110UFDB-7?

For technical support, including DMP2110UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2110UFDB-7 requirements.

6.How does Aetrix verify that DMP2110UFDB-7 is sourced from the original manufacturer or authorized distributors?

All DMP2110UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2110UFDB-7 meets industry standards.

7.What is the process for return or replacement of DMP2110UFDB-7?

All DMP2110UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2110UFDB-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP2110UFDB-7 part is unused and in its original packaging.

Return procedure for DMP2110UFDB-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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