Diodes Incorporated DMP2110UFDBQ-13
- Part No.:
- DMP2110UFDBQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP2110UFDBQ-13.pdf
- Description:
- MOSFET 2P-CH 20V 3.2A 6UDFN
- Quantity:
- Payment:

- Shipping:

Inventory:3,278
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Product details
Overview
DMP2110UFDBQ-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for -20V VDSS, 75mΩ RDS(ON) @ VGS = -4.5V, and -3.2A continuous drain current at TA = +25°C. It serves as a compact, low-profile load switch in space-constrained portable power adaptors and automotive power-management circuits.
For engineers reviewing the DMP2110UFDBQ-13 datasheet, DMP2110UFDBQ-13 pinout, DMP2110UFDBQ-13 application, or DMP2110UFDBQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, 0.6mm max height, 4mm² PCB footprint, and dual-channel P-channel topology enabling independent high-side switching with minimal gate drive overhead.
Technical Context
This dual MOSFET integrates two matched P-channel silicon die in a single ultra-thin U-DFN2020-6 (Type B) package with NiPdAu-plated terminals. Its gate threshold voltage range of -0.45V to -1.0V enables reliable turn-on from low-voltage logic rails (e.g., 3.3V or 2.5V systems with inverted control).
The device exhibits low dynamic parameters: Ciss = 443pF, Qg = 6.0nC @ VGS = -4.5V, and tF = 9.5ns, supporting efficient high-frequency switching in DC-DC converter synchronous rectification and USB-C power path control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Maximum blocking voltage for high-side switch placement in ≤12V automotive and portable systems. |
| RDS(ON) | 75mΩ @ VGS = -4.5V - Enables ≤240mW conduction loss at 3.2A, critical for thermally limited thin-profile designs. |
| ID (max) | -3.2A @ TA = +25°C - Supports sustained load currents in battery-powered adapters without forced cooling. |
| Ciss | 443pF - Low input capacitance reduces gate drive power and improves EMI profile in 1–2MHz switching applications. |
| tF | 9.5ns - Fast fall time minimizes cross-conduction risk in half-bridge configurations and bidirectional power switches. |
| TJ range | -55°C to +150°C - Validated operation across automotive under-hood and industrial ambient conditions. |
| Qg | 6.0nC @ VGS = -4.5V - Enables direct drive from low-current GPIOs or dedicated gate drivers with <10mA peak sourcing capability. |
Pinout & Package
U-DFN2020-6 (Type B) is a 2.0mm × 2.0mm × 0.6mm leadless surface-mount package with exposed thermal pad on bottom side and six terminals arranged in dual-source configuration. Pin 1 is marked by chamfered corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain 1 | High-side output node for Channel 1; connects to input rail in load-switch configuration. |
| 2 (S1) | Source 1 | Channel 1 return path; tied to system ground or load common in high-side switch layout. |
| 3 (G1) | Gate 1 | Independent control input for Channel 1; requires negative VGS relative to S1 for turn-on. |
| 4 (G2) | Gate 2 | Independent control input for Channel 2; electrically isolated from G1 for asynchronous operation. |
| 5 (S2) | Source 2 | Channel 2 return path; may be tied to S1 or kept separate for dual independent loads. |
| 6 (D2) | Drain 2 | High-side output node for Channel 2; supports redundant or parallel power paths. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent P-channel channels | Enables two separate high-side switches in one 4mm² footprint-reducing board area vs. discrete dual-MOSFET solutions. |
| AEC-Q101 qualified | Validated for automotive power management including body control modules and infotainment power sequencing. |
| 0.6mm maximum height | Meets strict Z-height constraints in slim smartphones, wearables, and USB PD adapters with stacked PCB architectures. |
| Low RDS(ON) at low VGS | 110mΩ @ VGS = -2.5V allows robust operation with 3.3V GPIOs driving level-shifted gate signals. |
| NiPdAu terminal finish | Ensures solderability and long-term intermetallic stability per MIL-STD-202 Method 208, critical for high-reliability reflow cycles. |
Applications
| USB-C Power Path Control | Automotive Body Control Module |
|---|---|
|
Use Scenario: Bidirectional power routing between USB-C port and system battery in portable devices. IC Role / Device Role / Timing Role: Dual high-side switch managing VBUS and CC line power delivery with independent enable control. Use Value: 75mΩ RDS(ON) limits voltage drop to <240mV at 3.2A, preserving USB PD 20V/3A compliance while enabling reverse-charging capability. |
Use Scenario: Independent control of LED lighting zones and sensor bias rails in vehicle door modules. IC Role / Device Role / Timing Role: Dual-channel load switch providing fault-isolated power domains with fast turn-off (<34ns total delay+fall). Use Value: AEC-Q101 qualification and -55°C to +150°C operation ensure reliability across temperature cycling in non-climate-controlled cabin environments. |
| Portable Power Adaptor | Industrial IoT Sensor Node |
|
Use Scenario: Input power switching and output load disconnect in compact 5V/3A wall adapters. IC Role / Device Role / Timing Role: High-side switch isolating primary-side DC after AC/DC conversion and secondary-side load during standby. Use Value: 4mm² footprint and 0.6mm height allow integration into sub-15mm-thick adapter housings without thermal derating penalties. |
Use Scenario: Power gating of RF transceivers and analog front-ends in battery-operated edge sensors. IC Role / Device Role / Timing Role: Low-quiescent-current load switch enabling microamp-level sleep mode with rapid wake-up response. Use Value: Gate threshold of -0.45V to -1.0V ensures clean turn-on with 1.8V/3.3V microcontroller I/O, eliminating need for external level shifters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-13 | Single P-channel, 20V, 42mΩ @ -4.5V, SO-8 package (5mm × 6mm) | Larger footprint, higher RDS(ON) per channel but higher current rating (−6.5A) | Select when higher single-channel current capacity is required and board space permits SO-8 layout. |
| SI3483DV-T1-GE3 | Dual P-channel, 20V, 90mΩ @ -4.5V, TSOP-6 (3mm × 2.8mm), no AEC-Q101 | Smaller than SO-8 but larger than U-DFN2020-6; lacks automotive qualification and has higher RDS(ON) | Select for cost-sensitive consumer applications where AEC-Q101 is not mandated and 15% higher conduction loss is acceptable. |
Compared with DMC2038LSD-13 and SI3483DV-T1-GE3, the DMP2110UFDBQ-13 delivers the smallest footprint (4mm²), lowest profile (0.6mm), and only AEC-Q101-qualified option-making it optimal for space- and reliability-critical automotive and portable designs where dual independent switching is required.
Availability
DMP2110UFDBQ-13 is available at Aetrix Electronics and suitable for USB-C power delivery systems, automotive body electronics, and portable power adaptors requiring stable component supply, AEC-Q101 compliance, and ultra-compact packaging.
Supply support for DMP2110UFDBQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMP2110UFDBQ belongs to Diodes' automotive-qualified U-DFN MOSFET product line, engineered specifically for space-constrained, thermally demanding high-side switching applications in ADAS, body electronics, and portable power systems.
FAQ
What is the maximum allowable gate-source voltage for DMP2110UFDBQ-13?
The absolute maximum VGS rating is ±12V. Exceeding this value risks permanent gate oxide damage. In practice, gate drive should be limited to -4.5V to -8V for optimal RDS(ON) and safe margin, as confirmed by datasheet electrical characteristics and SOA curves.
Does DMP2110UFDBQ-13 require a gate resistor for typical switching applications?
A gate resistor is recommended to control dV/dt and suppress ringing, especially at >500kHz switching frequencies. The datasheet's tD(ON) = 4.0ns and tF = 9.5ns indicate fast intrinsic switching; a 2.2Ω to 10Ω series resistor balances speed and EMI performance without compromising drive capability from standard logic buffers.
How is thermal performance affected when both channels operate simultaneously?
Simultaneous conduction increases junction temperature due to shared thermal resistance (RθJA = 110°C/W on 1-inch² copper). At -3.2A per channel, total power dissipation reaches ~1.53W, raising TJ by ~168°C above ambient-requiring derating to ≤1.8A per channel or enhanced PCB copper area per the datasheet's Note 6 layout guidelines.
Can DMP2110UFDBQ-13 be used in linear regulation mode?
No-it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) chart (Figure 12) shows only pulsed and DC boundary limits up to 10ms; sustained linear use risks thermal runaway due to positive temperature coefficient of RDS(ON) and lack of SOA validation beyond 100µs pulses.
DMP2110UFDBQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 3.2A (Ta)
- Rds On (Max) @ Id, Vgs:
- 75mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 443pF @ 10V
- Power - Max:
- 820mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMP2110UFDBQ-13 FAQ
1.How can I place an order for DMP2110UFDBQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2110UFDBQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2110UFDBQ-13 reliable?
The price and inventory of DMP2110UFDBQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2110UFDBQ-13 is usually 5 days.
3.What payment methods are accepted for DMP2110UFDBQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2110UFDBQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2110UFDBQ-13?
DMP2110UFDBQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2110UFDBQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2110UFDBQ-13?
For technical support, including DMP2110UFDBQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2110UFDBQ-13 requirements.
6.How does Aetrix verify that DMP2110UFDBQ-13 is sourced from the original manufacturer or authorized distributors?
All DMP2110UFDBQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2110UFDBQ-13 meets industry standards.
7.What is the process for return or replacement of DMP2110UFDBQ-13?
All DMP2110UFDBQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2110UFDBQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2110UFDBQ-13 part is unused and in its original packaging.
Return procedure for DMP2110UFDBQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMP2110UFDBQ-13 Tags

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